X-Ray Interferometric Investigations of Structural Distortions in Semiconductor Crystals Caused by Constant Electric and Magnetic Fields

Abstract

The effect of constant electric and magnetic fields on the silicon semiconductor crystals is investigated experimentally. It is shown that electric and magnetic fields create structural distortions leading to changes in X-Ray interferometric pictures, which depend on the magnitude of the applied field. At certain values of the intensity of electric field and the induction of magnetic field, the Moire pictures disappear.