Lithuanian Journal of Physics最新文献_第10页

Hybrid organic-inorganic Fe3O(TFBDC)3(H2O)3·(DMF)3 compound synthesized by slow evaporation method: Characterization and comparison of magnetic properties 慢蒸发法合成有机-无机杂化Fe3O（TFBDC）3（H2O）3·（DMF）3化合物：表征和磁性能比较

IF 0.6 4区物理与天体物理

Lithuanian Journal of Physics Pub Date : 2020-02-05 DOI: 10.3952/physics.v60i1.4166

A. Laurikėnas, K. Mažeika, D. Baltrunas, R. Skaudžius, A. Beganskiene, A. Kareiva

引用次数: 2

Alternating current susceptibility and magnetisation of nanocrystalline Co2MnSi Heusler alloy films 纳米晶Co2MnSi Heusler合金薄膜的交流电磁化率和磁化性能

IF 0.6 4区物理与天体物理

Lithuanian Journal of Physics Pub Date : 2020-02-05 DOI: 10.3952/physics.v60i1.4165

B. Vengalis, A. Maneikis, G. Grigaliūnaitė-Vonsevičienė, R. Juškėnas, A. Selskis

引用次数: 1

Charge carrier mobility dynamics in organic semiconductors and solar cells 有机半导体和太阳能电池中的载流子迁移动力学

IF 0.6 4区物理与天体物理

Lithuanian Journal of Physics Pub Date : 2020-02-05 DOI: 10.3952/physics.v60i1.4160

V. Gulbinas

引用次数: 3

Estimation of the charged defect density from hot-electron transport studies in epitaxial ZnO 外延ZnO热电子输运研究中带电缺陷密度的估计

IF 0.6 4区物理与天体物理

Lithuanian Journal of Physics Pub Date : 2020-02-05 DOI: 10.3952/physics.v60i1.4163

L. Ardaravičius, O. Kiprijanovič, M. Ramonas, E. Šermukšnis, A. Simukovic, A. Matulionis

引用次数: 1

Improvement of GaN crystalline quality by SiNx layer grown by MOVPE 利用MOVPE生长的SiNx层改善氮化镓晶体质量

IF 0.6 4区物理与天体物理

Lithuanian Journal of Physics Pub Date : 2020-01-05 DOI: 10.3952/physics.v59i4.4134

A. Hospodková, M. Zíková, T. Hubáček, J. Pangrác, K. Kuldová, F. Hájek, F. Dominec, A. Vetushka, S. Hasenöhrl

{"title":"Improvement of GaN crystalline quality by SiNx layer grown by MOVPE","authors":"A. Hospodková, M. Zíková, T. Hubáček, J. Pangrác, K. Kuldová, F. Hájek, F. Dominec, A. Vetushka, S. Hasenöhrl","doi":"10.3952/physics.v59i4.4134","DOIUrl":"https://doi.org/10.3952/physics.v59i4.4134","url":null,"abstract":"In this work the mechanism which helps to reduce the dislocation density by deposition of a SiNx interlayer is discussed. It is shown that the dislocation reduction by SiNx interlayer deposition is influenced by dislocation density in the underlying GaN layers. The SiNx interlayer is very effective when the original dislocation density is high, while in the case of lower dislocation density the deposition of SiNx is not effective for crystal quality improvement. Although it is widely accepted that SiNx serves as a barrier for dislocation propagation, similarly to the enhanced lateral overgrowth method, it is shown that after masking the SiNx deposition cannot be the dominant dislocation reduction mechanism. The most probable mechanism is the annihilation of bended neighbouring dislocations during the coalescence of 3D islands. The SiNx layer cannot serve as a barrier for dislocations, since it is probably dissolved during the following GaN growth and dissolved Si atoms are incorporated into the above-grown GaN layer which stimulates the 3D island formation. Then the use of the SiNx interlayer for dislocation reduction is recommended only for the improvement of layers with a high dislocation density. On the other hand, the PL signal was strongly enhanced for both low and high dislocation density structures with the SiNx interlayer, suggesting that the interlayer might help to suppress the nonradiative recombination in subsequent GaN that is not related to the dislocation density, which remained the same. But its origin has to be studied further.","PeriodicalId":18144,"journal":{"name":"Lithuanian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2020-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47617216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Nanocone structures with limited interspace grown by MOVPE MOVPE生长有限间隙纳米锥结构

IF 0.6 4区物理与天体物理

Lithuanian Journal of Physics Pub Date : 2020-01-05 DOI: 10.3952/physics.v59i4.4133

J. Novák, P. Eliáš, S. Hasenöhrl, A. Laurenčíková, P. Urbancová, D. Pudiš

引用次数: 1

Spectroscopy of defects in neutron irradiated ammono-thermal GaN by combining photoionization, photoluminescence and positron annihilation techniques 结合光电离、光致发光和正电子湮没技术的中子辐照氨热氮化镓缺陷光谱研究

IF 0.6 4区物理与天体物理

Lithuanian Journal of Physics Pub Date : 2020-01-05 DOI: 10.3952/physics.v59i4.4137

J. Pavlov, T. Ceponis, L. Deveikis, Tanja Heikkinen, Jyrki Raisanen, V. Rumbauskas, G. Tamulaitis, F. Tuomisto, E. Gaubas

引用次数: 0

MOCVD deposition of zinc and bismuth chalcogenides films on the surface of silica optical fibres 二氧化硅光纤表面MOCVD沉积锌铋硫族化物薄膜

IF 0.6 4区物理与天体物理

Lithuanian Journal of Physics Pub Date : 2020-01-05 DOI: 10.3952/physics.v59i4.4136

P. Kuznetsov, G. Yakushcheva, E. Savelyev, V. Yapaskurt, V. Shcherbakov, Alexey Temiryasev, L. Zakharov, V. A. Jitov, D. Sudas

{"title":"MOCVD deposition of zinc and bismuth chalcogenides films on the surface of silica optical fibres","authors":"P. Kuznetsov, G. Yakushcheva, E. Savelyev, V. Yapaskurt, V. Shcherbakov, Alexey Temiryasev, L. Zakharov, V. A. Jitov, D. Sudas","doi":"10.3952/physics.v59i4.4136","DOIUrl":"https://doi.org/10.3952/physics.v59i4.4136","url":null,"abstract":"Metal organic chemical vapour deposition (MOCVD) technology is adapted for the deposition of thin zinc and bismuth chalcogenides films on the surface of silica optical fibres with short tapered sections. Growth runs were carried out in a special tubular quartz reactor at atmospheric pressure of hydrogen at 425°C temperature using ZnEt2, BiMe3, Et2Te and i-Pro2Se as organometallic precursors. During the deposition of chalcogenides, the transmittance spectra of the fibre were recorded in regular short time intervals. In the transmittance spectra of the fibre with a tapered section coated by ZnSe and ZnTe, lossy mode resonances (LMR) were observed at a diameter of the tapered waist below 30 μm. After the deposition of very thin Bi2Te3 and Bi2Se3 island films on the tapered waist with a diameter about 10 μm optical fibres were built into erbium fibre ring lasers. A pulsed generation mode was achieved in some of lasers due to resonator Q-factor modulation. These results can be applied for the design of LMR fibre sensors and passively Q-switch pulsed fibre lasers.","PeriodicalId":18144,"journal":{"name":"Lithuanian Journal of Physics","volume":"59 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2020-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45701236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Reduction of surface roughness by modification of step-bunched aluminum nitride layers towards step-flow morphology 用阶梯束化氮化铝层的阶梯流形态改性降低表面粗糙度

IF 0.6 4区物理与天体物理

Lithuanian Journal of Physics Pub Date : 2020-01-05 DOI: 10.3952/physics.v59i4.4135

N. Tillner, C. Brandl, M. Hoffmann, R. Moser, A. Waag, H. Lugauer

{"title":"Reduction of surface roughness by modification of step-bunched aluminum nitride layers towards step-flow morphology","authors":"N. Tillner, C. Brandl, M. Hoffmann, R. Moser, A. Waag, H. Lugauer","doi":"10.3952/physics.v59i4.4135","DOIUrl":"https://doi.org/10.3952/physics.v59i4.4135","url":null,"abstract":"Conventional aluminum nitride (AlN) template fabrication techniques, like hydride vapour phase epitaxy or AlN growth on patterned sapphire substrates, usually lead to step-bunched template surfaces. The resulting macrosteps cause emission broadening or even multiple-peak characteristics of ultraviolet light-emitting diodes (UV LEDs) fabricated on such AlN templates. In order to reduce these macrosteps and to provide a smoother surface, even without the need of a thick AlN deposition, a two-layer growth procedure is reported here. A three-dimensional (3D) – twodimensional (2D) sequential growth initiates a significant modification of the previous AlN surface morphology and simultaneously limits the evolving tensile strain. A primarily step-bunched surface with a surface roughness root mean square of 1.8 nm is successfully reduced by the two-layer growth procedure down to 0.8 nm, without any film cracking. This distinct roughness reduction of more than 50% is achieved within an AlN thickness of only 1.3 μm. With a smoother surface, the electroluminescence characteristic of a UV LED structure is substantially improved. Instead of a double-peak emission, typical for LEDs grown on step-bunched templates, a single-peak emission and lower spectral width were achieved, indicating the high potential of the suggested two-layer technique for improving performance.","PeriodicalId":18144,"journal":{"name":"Lithuanian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.6,"publicationDate":"2020-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45719649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nonstoichiometric tin oxide films: study by X-ray diffraction, Raman scattering and electron paramagnetic resonance 非化学计量氧化锡薄膜:x射线衍射、拉曼散射和电子顺磁共振的研究

IF 0.6 4区物理与天体物理

Lithuanian Journal of Physics Pub Date : 2020-01-05 DOI: 10.3952/physics.v59i4.4138

D. Adamchuk, V. Ksenevich, N. Poklonski, Marius Navickas, J. Banys

引用次数: 4