发布求助
文献互助 智能选刊 最新文献

1980 International Electron Devices Meeting最新文献

筛选
英文 中文
Thermal diffusion current mechanisms in n+-p-p+Hg1-xCdxTe photodiodes n+-p-p+Hg1-xCdxTe光电二极管的热扩散电流机制
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189878
J. Shanley, C. T. Flanagan, M. Reine, T. Casselman
{"title":"Thermal diffusion current mechanisms in n+-p-p+Hg1-xCdxTe photodiodes","authors":"J. Shanley, C. T. Flanagan, M. Reine, T. Casselman","doi":"10.1109/IEDM.1980.189878","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189878","url":null,"abstract":"The thermal diffusion current mechanisms present in an 8-14 micrometer n<sup>+</sup>-p-p<sup>+</sup>(Hg,Cd)Te photodiode are analyzed. The n<sup>+</sup>region diffusion current is determined by first calculating the Auger 1 lifetime in degenerate n-type (Hg,Cd)Te. The Auger 1 lifetime is found to vary as 1/n<sup>α</sup><inf>o</inf>, where 0.7 ≤ α ≤ 1.0 and no is the equilibrium carrier density, for degenerate n-type (Hg,Cd)Te. The p-side diffusion current is calculated by considering the radiative and Auger 7 recombination mechanisms. A comparison of the n<sup>+</sup>- and p- side thermal diffusion current components reveals that the p-side contribution is dominant.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114462574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InP/InGaAs heterojunction bipolar phototransistors with improved sensitivity 灵敏度提高的InP/InGaAs异质结双极光电晶体管
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189884
J. Campbell, A. Dentai, C. Burrus, J. F. Ferguson
{"title":"InP/InGaAs heterojunction bipolar phototransistors with improved sensitivity","authors":"J. Campbell, A. Dentai, C. Burrus, J. F. Ferguson","doi":"10.1109/IEDM.1980.189884","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189884","url":null,"abstract":"The fabrication and device characteristics of back-illuminated InP/InGaAs n-p-n heterojunction phototransistors will be described. These devices consist of a \"wide-bandgap\" InP emitter with smaller bandgap InGaAs base and collector layers. Uniform spectral response is observed in the wavelength range from 0.95 µm to 1.6 µm. The DC optical gain increases from approximately 40 at an input power of 1 nW to over 1000 for an input power level of 5 µW. The small-signal gain is characteristically 2 to 3 times higher than the EC gain. The cut-off frequency fTis an increasing function of the incident light level; for 1 µW of incident power fT≃ 300 MHz. The possible applications of these phototransistors in fiber optic systems will be discussed.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115288552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LWIR HgCdTe photovoltaic detectors for hybrid focal plane arrays 用于混合焦平面阵列的LWIR HgCdTe光伏探测器
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189875
K. Riley
{"title":"LWIR HgCdTe photovoltaic detectors for hybrid focal plane arrays","authors":"K. Riley","doi":"10.1109/IEDM.1980.189875","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189875","url":null,"abstract":"High performance second generation infrared imaging systems require high density focal plane arrays which utilize intrinsic HgCdTe photodiodes for photon detection and Si CCD signal processors in a hybrid configuration. Limitations on system performance are established by both input circuit as well as detector requirements. In the paper performance of LWIR photodiodes in the 8-12 µm spectral region will be discussed. LWIR HgCdTe photodiodes have been fabricated by two basic techniques: ion implantation and liquid phase epitaxial heterojunctions. In the 8-12 µm region dark current components include diffusion, generation-recombination, tunneling and surface leakage currents. Each of these components may be minimized and therefore performance maximized by proper choice of material parameters and device design. In this paper a tradeoff analysis including thin base lateral diffusion (TBLD) as well as heterojunction (HJ) design concepts utilized to minimize dark current sources will be presented. A review of recent and current work on HgCdTe ion implantation and heterojunction technology including material growth, surface passivation and device fabrication will be presented and experimental results compared with predicted device performance.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116166888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new silicon micro-transducer for the measurement of the magnitude and direction of a magnetic-field vector 一种用于测量磁场矢量大小和方向的新型硅微传感器
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189924
V. Zieren
{"title":"A new silicon micro-transducer for the measurement of the magnitude and direction of a magnetic-field vector","authors":"V. Zieren","doi":"10.1109/IEDM.1980.189924","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189924","url":null,"abstract":"This paper describes a new Silicon Micro-Transducer (SMT) which is capable of measuring the magnitude and direction of a magnetic-field vector. This vector sensor --made by standard bipolar technology-is a four-collector npn-transistor giving output signals which are a linear function of the two components of an in-plane magnetic field. A centrally injected current is divided into four equal parts. The current differences of the two pairs of opposite collectors, affected by the two in-plane field components, are the output signals. Consequently, the amplitude and direction of the applied field can be derived from these independent signals. The vector sensor was developed from a one-dimensional sensor having two collectors only. As the basic operating principles are the same, most of the one-dimensional characteristics also apply to the vector sensor. Non-linearity: ≤ 0.3% for |B| ≤ 1 T. Typical sensitivity per collector pair: δIc/(Ic.B) = 3 × 10-2T-1at Ucb= 5 V.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116303379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Weakly inverted MOSFETs and their applications 弱反转mosfet及其应用
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189959
S.T. Liu, O. Tufte, J.S.T. Huang, A. van der Ziel
{"title":"Weakly inverted MOSFETs and their applications","authors":"S.T. Liu, O. Tufte, J.S.T. Huang, A. van der Ziel","doi":"10.1109/IEDM.1980.189959","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189959","url":null,"abstract":"The relevant properties of the weakly inverted MOSFETS are examined for high impedance sensor applications. The characteristics of these devices are exponential and their transconductance approaches that of bipolar transistors through a factor n which is a useful characteristic of these devices. The high frequency noise spectrum in these devices is found to be white and inversely proportional to the drain current. The high frequency noise spectrum is related to n and is identified to be thermal noise. The 1/f noise corner frequencies in these devices are found to be lower than in the strongly inverted region. These properties make the weakly inverted MOSFETS useful as amplifiers in low power, low frequency and high impedance sensor applications.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122028389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental and theoretical characterization of submicron MOSFETs 亚微米mosfet的实验与理论表征
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189743
W. Fichtner, E. Fuls, R. L. Johnston, T. Sheng, R. Watts
{"title":"Experimental and theoretical characterization of submicron MOSFETs","authors":"W. Fichtner, E. Fuls, R. L. Johnston, T. Sheng, R. Watts","doi":"10.1109/IEDM.1980.189743","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189743","url":null,"abstract":"We report on measurements and computer simulations for enhancement and depletion MOSFETs with submicron channel lengths as small as 0.2 µm. The behavior of the devices is analyzed using both advanced techniques such as transmission electron microscopy for profile measurements and numerical models to simulate processing conditions and device behavior in two dimensions.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125901750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
GaAs IGFET: A new device for high speed digital ICs GaAs IGFET:一种高速数字集成电路的新器件
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189861
F. Schuermeyer, H.P. Singh, R. Scherer, D. Mays
{"title":"GaAs IGFET: A new device for high speed digital ICs","authors":"F. Schuermeyer, H.P. Singh, R. Scherer, D. Mays","doi":"10.1109/IEDM.1980.189861","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189861","url":null,"abstract":"GaAs IGFETs contain large interface state densities at midgap which, in the past have hindered the application of these devices in digital ICs. We have developed circuit techniques to charge these interface states such that the device operates in enhancement mode. These interface charges appear frozen at high frequencies. Ring oscillators and divide by two circuits were successfully fabricated and encouraging performance characteristics were observed. This presents the first reported demonstration of divide by two circuits using GaAs IGFET technology.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"386 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126735334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High frequency bipolar - JFET - I2L process 高频双极- JFET - I2L工艺
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189844
S. Lui, R. Meyer
{"title":"High frequency bipolar - JFET - I2L process","authors":"S. Lui, R. Meyer","doi":"10.1109/IEDM.1980.189844","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189844","url":null,"abstract":"A new monolithic process is described which allows simultaneous fabrication of high-speed (f<inf>T</inf>=400 MHz) JFETs, high-frequency (f<inf>T</inf>=4 GHz) bi-polar transistors plus I<sup>2</sup>L logic (t<inf>d</inf>=14 ns). The process incorporates an ion-implanted JFET structure with independently contacted gates and a bi-polar transistor with implanted base and emitter.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126858237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Propagation delay time dependence on gate geometry for the self-aligned I2L 自对准I2L传输延迟时间与栅极几何的关系
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189846
S. Kameyama, K. Kanzaki, M. Taguchi, Y. Sasaki, G. Sasaki
{"title":"Propagation delay time dependence on gate geometry for the self-aligned I2L","authors":"S. Kameyama, K. Kanzaki, M. Taguchi, Y. Sasaki, G. Sasaki","doi":"10.1109/IEDM.1980.189846","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189846","url":null,"abstract":"The gate geometry dependence of the minimum pro.- pagation delay time (t<inf>pdm</inf>) was investigated for the self-aligned I<sup>2</sup>L. Switching characteristics were measured by using I<sup>2</sup>L test patterns with different base contact geometries and collector widths (W<inf>c</inf>); t<inf>pdm</inf>=0.9 nS for a double base contact and W<inf>c</inf>= 4µm I<sup>2</sup>L gate and f<inf>toggle-max</inf>= 150 MHz for a divide-by two circuit with W<inf>c</inf>= 7 µm I<sup>2</sup>L gates. Experimental results suggest that the resistance of the intrinsic base area for the n-p-n transistor has strong influence on t<inf>pdm</inf>. An analysis based on a charge control model which includes this base resistance effect was carried out and the experimental results were explained very well.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125156545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electrically alterable programmable logic array (EAPLA) 电可变可编程逻辑阵列
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189904
Y. Hsieh, R. Wood, P.P. Wang
{"title":"Electrically alterable programmable logic array (EAPLA)","authors":"Y. Hsieh, R. Wood, P.P. Wang","doi":"10.1109/IEDM.1980.189904","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189904","url":null,"abstract":"A functional Electrically Alterable Programmable Logic Array (EAPLA) has been developed to serve as fast turn-around-time engineering hardware for custom structured macro design in VLSI. A novel electrically alterable, floating gate memory device has been developed with double polysilicon technology. It was used in the PLA array such that the personalization patterns of the PLA can be electrically altered in the users' laboratory after packaging. The non-volatile memory device employs channel hot electron injection to write and junction avalanche breakdown hot hole injection or Fowler-Nordheim electron tunneling across the oxides to erase. Unique features of the cell structures and implementation to the EAPLA will be discussed.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122084368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信