Experimental and theoretical characterization of submicron MOSFETs

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1980.189743

W. Fichtner, E. Fuls, R. L. Johnston, T. Sheng, R. Watts

引用次数: 15

Abstract

We report on measurements and computer simulations for enhancement and depletion MOSFETs with submicron channel lengths as small as 0.2 µm. The behavior of the devices is analyzed using both advanced techniques such as transmission electron microscopy for profile measurements and numerical models to simulate processing conditions and device behavior in two dimensions.

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亚微米mosfet的实验与理论表征

我们报告了亚微米通道长度小至0.2 μ m的增强和耗尽mosfet的测量和计算机模拟。设备的行为分析使用先进的技术，如透射电子显微镜的轮廓测量和数值模型，以模拟加工条件和设备的行为在两个维度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1980 International Electron Devices Meeting

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