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Tunable photoluminescence of uniformly doped short-period GaAs doping superlattices 均匀掺杂短周期GaAs掺杂超晶格的可调谐光致发光
Integrated Photonics Research Pub Date : 1992-03-15 DOI: 10.1063/1.351008
K. Choquette, L. Mccaughan, D. Misemer, J. E. Potts, G. Vernstrom
{"title":"Tunable photoluminescence of uniformly doped short-period GaAs doping superlattices","authors":"K. Choquette, L. Mccaughan, D. Misemer, J. E. Potts, G. Vernstrom","doi":"10.1063/1.351008","DOIUrl":"https://doi.org/10.1063/1.351008","url":null,"abstract":"Doping or n-i-p-i superlattices are promising materials for tunable light sources. Long-period GaAs doping superlattices have exhibited wide tunability in the photoluminescence (PL) peak energy versus excitation intensity,1 but photopumped lasing has been observed only at high excitation, where excess carriers completely screen the superlattice space-charge potential.2 By contrast, short-period superlattices possess a smaller degree of luminescence tunability yet exhibit larger oscillator strengths because of the greater overlap between electron and hole wave functions in the n- and p-type layers, respectively. A desirable goal is to achieve lasing at carrier densities below the value that completely screens the superlattice potential, thereby permitting tunability of the radiation. We have investigated the limits of tunability in uniformly doped short-period GaAs doping superlattices and present results of low-temperature photoluminescence.","PeriodicalId":175010,"journal":{"name":"Integrated Photonics Research","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124688517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 1 x 16 lithium niobate optical switch matrix with integral TTL compatible drive electronics 1 × 16铌酸锂光开关矩阵与集成TTL兼容驱动电子
Integrated Photonics Research Pub Date : 1991-12-05 DOI: 10.1049/EL:19911466
A. O'donnell, N. Parsons
{"title":"A 1 x 16 lithium niobate optical switch matrix with integral TTL compatible drive electronics","authors":"A. O'donnell, N. Parsons","doi":"10.1049/EL:19911466","DOIUrl":"https://doi.org/10.1049/EL:19911466","url":null,"abstract":"The realization of photonic switching circuits in future broadband communication networks depends on achieving the necessary optical functionality with system-friendly interfaces. Although lithium niobate switch matrices have progressed considerably, a critical step in the technology transfer to commercial applications is providing standard interfaces. Hybrid optoelectronic integration with these components will eliminate complex and expensive installation procedures and provide direct line-replaceable components operating under direct logic control.","PeriodicalId":175010,"journal":{"name":"Integrated Photonics Research","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121802325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Anisotropic reactive ion etching of InP in methane/hyclrogen based plasmas 甲烷/氢基等离子体中InP的各向异性反应离子刻蚀
Integrated Photonics Research Pub Date : 1991-11-01 DOI: 10.1116/1.585839
J. McNabb, H. Craighead, H. Temkin, R. Logan
{"title":"Anisotropic reactive ion etching of InP in methane/hyclrogen based plasmas","authors":"J. McNabb, H. Craighead, H. Temkin, R. Logan","doi":"10.1116/1.585839","DOIUrl":"https://doi.org/10.1116/1.585839","url":null,"abstract":"We have investigated reactive ion etching of InP in methane/hydrogen based plasmas. We have determined mask systems and etch chemistries for low roughness anisotropic etching of photonic device structures. Methane/hydrogen mixtures have been known to etch InP, however the simultaneous deposition of carbon containing polymer, surface roughness and lack of reliable rate control has limited their utility.1 We have carefully examined the role of etching conditions and chemistries to optimize the rate and anisotropy and to understand and control the polymer deposition in methane/hydrogen based etching. Part of the investigation included empirical modeling of the etch process.2 We have also studied the inclusion of oxygen in the etch gas for enhanced results.","PeriodicalId":175010,"journal":{"name":"Integrated Photonics Research","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133217716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
Polarization rotation in asymmetric periodic loaded rib waveguides 非对称周期性加载肋波导的偏振旋转
Integrated Photonics Research Pub Date : 1991-09-09 DOI: 10.1063/1.105474
Y. Shani, R. Alferness, T. Koch, U. Koren, M. Oron, B. Miller, M. Young
{"title":"Polarization rotation in asymmetric periodic loaded rib waveguides","authors":"Y. Shani, R. Alferness, T. Koch, U. Koren, M. Oron, B. Miller, M. Young","doi":"10.1063/1.105474","DOIUrl":"https://doi.org/10.1063/1.105474","url":null,"abstract":"Polarization rotation is an important effect in integrated optics. It is required in balanced polarization diversity heterodyne receivers and in polarization controllers. Polarization rotation has been demonstrated in LiNbO3 and in III-V waveguides using the electro-optic effect1−3 and LiNbO3 using the photo-elastic effect.4","PeriodicalId":175010,"journal":{"name":"Integrated Photonics Research","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132127250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 170
Simple method for estimating useable bend radii of deeply etched optical rib waveguides 估计深蚀刻光肋波导可用弯曲半径的简单方法
Integrated Photonics Research Pub Date : 1991-08-15 DOI: 10.1049/EL:19910962
E. Pennings, R. Deri, R. Hawkins
{"title":"Simple method for estimating useable bend radii of deeply etched optical rib waveguides","authors":"E. Pennings, R. Deri, R. Hawkins","doi":"10.1049/EL:19910962","DOIUrl":"https://doi.org/10.1049/EL:19910962","url":null,"abstract":"The successful application of OEIC's requires monomode waveguides, compact low-loss bends, and efficient fiber coupling. The deeply etched rib waveguide shown in Fig. 1 can meet these requirements.1,2 A numerical analysis of the bending loss requires involved calculations such as the three-dimensional BPM3 or the VCM.4 Here, a simple model based on the effective index method (EIM) is introduced that estimates the minimum useable bend radius. Our method does not provide the same degree of accuracy nor a value of the bending loss but does provide an extremely rapid and simple estimate of the minimum useable radius which is all that is required for most design purposes.","PeriodicalId":175010,"journal":{"name":"Integrated Photonics Research","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124274268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
GexSi1-x optical directional coupler GexSi1-x光定向耦合器
Integrated Photonics Research Pub Date : 1991-06-17 DOI: 10.1063/1.104773
R. Mayer, K. Jung, T. Hsieh, D. Kwong, J. Campbell
{"title":"GexSi1-x optical directional coupler","authors":"R. Mayer, K. Jung, T. Hsieh, D. Kwong, J. Campbell","doi":"10.1063/1.104773","DOIUrl":"https://doi.org/10.1063/1.104773","url":null,"abstract":"Historically, GaAs- and InP-based compounds have been the dominant materials for optoelectronic devices, whereas Si has been the material of choice in the commercial electronics industry because of its ease of handling, ease of processing, and low manufacturing costs. For this reason, hybrid techniques have frequently been used to combine optoelectronic devices and electronic circuits. Since this can be costly, there has been a concentrated effort to develop III-V compound optoelectronic integrated circuits.1 A promising alternative involves the use of Ge\u0000 x\u0000 Si1-\u0000 x\u0000 layers, grown on Si substrates, to develop a wide range of Si-based optoelectronic devices and circuits. An initial step in this direction is the fabrication of waveguide structures in Ge\u0000 x\u0000 Si1-\u0000 x\u0000 layers, grown on Si substrates, to develop a wide range of Si-based optoelectronic devices and circuits. An initial step in this direction is the fabrication of waveguide structures in Ge\u0000 x\u0000 Si1-\u0000 x\u0000 .2-4 In this paper, we report, for the first time, the fabrication and characterization of Ge\u0000 x\u0000 Si1-\u0000 x\u0000 directional couplers.","PeriodicalId":175010,"journal":{"name":"Integrated Photonics Research","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124381332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Efficient vertical coupling of photodiodes to InGaAsP rib waveguides 光电二极管与InGaAsP肋波导的高效垂直耦合
Integrated Photonics Research Pub Date : 1991-06-17 DOI: 10.1063/1.104774
R. Deri, W. Doldissen, R. Hawkins, R. Bhat, J. Soole, L. M. Schiavone, M. Seto, N. Andreadakis, Y. Silberberg, M. Koza
{"title":"Efficient vertical coupling of photodiodes to InGaAsP rib waveguides","authors":"R. Deri, W. Doldissen, R. Hawkins, R. Bhat, J. Soole, L. M. Schiavone, M. Seto, N. Andreadakis, Y. Silberberg, M. Koza","doi":"10.1063/1.104774","DOIUrl":"https://doi.org/10.1063/1.104774","url":null,"abstract":"Monolithic optoelectronics requires optical linkage between waveguides and photodiodes. Vertical coupling offers the advantages of single-step epi-growth and ease of junction placement.1,2 Its drawback is weak coupling, resulting in long detector lengths L and high capacitance. thinner guides can reduce L,1,2 but increase input coupling difficulty. We recently demonstrated than an optical \"matching layer' introduced between a thick n-/n^+ InP waveguide and an InGaAs absorber significantly enhances vertical coupling.3 Here we show that this approach provides efficient coupling between InGaAs detectors and InGaAsP waveguides of the type currently employed in photonic integration.","PeriodicalId":175010,"journal":{"name":"Integrated Photonics Research","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126010747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
Wave packets in a semiconductor superlattice 半导体超晶格中的波包
Integrated Photonics Research Pub Date : 1991-05-20 DOI: 10.1063/1.105234
M. Biermann, C. R. Stroud
{"title":"Wave packets in a semiconductor superlattice","authors":"M. Biermann, C. R. Stroud","doi":"10.1063/1.105234","DOIUrl":"https://doi.org/10.1063/1.105234","url":null,"abstract":"When a short laser pulse excites a quantum system, a spatially localized wave packet is formed.1 In this paper, we present a theoretical study of hole wave packets in a room temperature semiconductor superlattice, the unit cell of which consists of four layers. The first and third layers are GaAs wells of width 9 and 14 monolayers, 25.4 and 39.6 A. The second and fourth are 5 monolayers, 14.1-Å thick Al0.3Ga0.7As barriers. Effectively, the material is a series of coupled quantum wells of alternating thicknesses. These parameters give an even splitting between the first three hole states. The bandgap discontinuity is split, with 43% allotted to the valence band, and the growth direction is 100. The theoretical model is a k.p. local pseudopotential method based on that of Smith and Mailhiot.2","PeriodicalId":175010,"journal":{"name":"Integrated Photonics Research","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131439317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Compact hybrid resonant-optical reflector lasers with very narrow linewidths 具有极窄线宽的紧凑混合谐振-光学反射激光器
Integrated Photonics Research Pub Date : 1991-02-04 DOI: 10.1063/1.104603
D. Ackerman, M. I. Dahbura, Y. Shani, C. Henry, R. Kistler, R. Kazarinov, C. Kuo
{"title":"Compact hybrid resonant-optical reflector lasers with very narrow linewidths","authors":"D. Ackerman, M. I. Dahbura, Y. Shani, C. Henry, R. Kistler, R. Kazarinov, C. Kuo","doi":"10.1063/1.104603","DOIUrl":"https://doi.org/10.1063/1.104603","url":null,"abstract":"Lasers with submegahertz linewidths have importance in various applications, such as in coherent optical communications, interferometric sensors, and resonant-optical gyroscopes. For several years our laboratory has investigated a hybrid Bragg reflector laser with typical linewidths of less than 1 MHz and a narrowest linewidth of 100 kHz. The narrow line results from operating the laser at the steeply rising edge of the Bragg reflection. Understanding this mechanism led to the development1 of resonant-optical reflectors (RORs), integrated-optical elements capable of providing feedback with a reflection spectrum even sharper than previously obtained. We report hybrid ROR laser linewidths as narrow as 7.1 kHz.","PeriodicalId":175010,"journal":{"name":"Integrated Photonics Research","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130735803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
New beam-propagation algorithm based on the method of lines 基于线法的波束传播新算法
Integrated Photonics Research Pub Date : 1991-02-01 DOI: 10.1364/JOSAB.8.000389
J. Gerdes, R. Pregla
{"title":"New beam-propagation algorithm based on the method of lines","authors":"J. Gerdes, R. Pregla","doi":"10.1364/JOSAB.8.000389","DOIUrl":"https://doi.org/10.1364/JOSAB.8.000389","url":null,"abstract":"When using the standard beam-propagation method (BPM), we can analyze optical waveguide structures in a clear way. Attention must be paid, however, to the following restrictions of the applicability of the BPM: no large transverse index steps, no large propagation steps compared with the wavelength, and propagation under paraxial conditions. Another problem arises from the finiteness of the computational window. The field intensity should be equal to zero, and radiation modes should not be reflected at the window edges. To achieve these conditions, we usually place artificial absorbers at the edges. This leads to additional storage and computing time.","PeriodicalId":175010,"journal":{"name":"Integrated Photonics Research","volume":"3 17","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131943360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 86
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