半导体超晶格中的波包

M. Biermann, C. R. Stroud
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引用次数: 2

摘要

当一个短激光脉冲激发一个量子系统时,就会形成一个空间局域化的波包本文对四层室温半导体超晶格中的空穴波包进行了理论研究。第一层和第三层是宽度为9和14单层的砷化镓井,25.4和39.6 A。第二层和第四层为5层单层,厚度为14.1-Å, Al0.3Ga0.7As。实际上,该材料是一系列厚度交替的耦合量子阱。这些参数给出了前三个空穴态之间的均匀分裂。带隙不连续被劈裂,43%分配给价带,生长方向为100。理论模型是基于Smith和mailhiot的k.p.局部伪势方法
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wave packets in a semiconductor superlattice
When a short laser pulse excites a quantum system, a spatially localized wave packet is formed.1 In this paper, we present a theoretical study of hole wave packets in a room temperature semiconductor superlattice, the unit cell of which consists of four layers. The first and third layers are GaAs wells of width 9 and 14 monolayers, 25.4 and 39.6 A. The second and fourth are 5 monolayers, 14.1-Å thick Al0.3Ga0.7As barriers. Effectively, the material is a series of coupled quantum wells of alternating thicknesses. These parameters give an even splitting between the first three hole states. The bandgap discontinuity is split, with 43% allotted to the valence band, and the growth direction is 100. The theoretical model is a k.p. local pseudopotential method based on that of Smith and Mailhiot.2
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