XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)最新文献_第8页

Improved materials for thermoelectric conversion (generation) 改进的热电转换(发电)材料

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667158

Z. Dashevsky, I. Drabkin, V. Korotaev, D. Rabinovich

{"title":"Improved materials for thermoelectric conversion (generation)","authors":"Z. Dashevsky, I. Drabkin, V. Korotaev, D. Rabinovich","doi":"10.1109/ICT.1997.667158","DOIUrl":"https://doi.org/10.1109/ICT.1997.667158","url":null,"abstract":"Thermoelectric conversion (TEC) presents several advantages compared to the other energy conversion technology: it is reliable, can operate untainted in hostile environments, and is also environmentally friendly. However the application has been limited up to now because of the relatively low conversion efficiency of traditional thermoelectric materials used in the devices. New more efficient materials are needed. The value of a material for thermoelectric power generation is defined by the thermoelectric figure of merit Z which is a function of the Seebeck coefficient S, electrical resistivity p, and thermal conductivity k and is defined as Z=S/sup 2//pk. A choice of the optimal techniques for the leg formation from synthesized thermoelectric materials, which are capable to provide the leg required forms and leg geometrical sizes, are determined by mechanical properties. Several methods for thermoelectric efficiency increase have been put forward over the past years. Among them we wish to focus our attention to produce segment thermoelectric legs with variation of the composition along the legs. Calculated efficiency in this case is more than 10% (Th=500/spl deg/C, Tc=50/spl deg/C). The first experimental results on a 2-stage composite leg indicate high efficiency in the thermoelectric energy conversion. Crystal-growth techniques with high crystalline perfection stimulates us to use this method for preparation the thermoelectric generator material.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133859114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Determination of structural changes and temperature distribution within crystals 晶体结构变化和温度分布的测定

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667642

V. Shafranyuk

引用次数: 0

On the use of bismuth in quantum wells 论铋在量子阱中的应用

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667177

A. Dauscher, B. Lenoir, O. Boffoué, X. Devaux, R. Martin-Lopez, H. Scherrer

引用次数: 3

Thermoelectric properties of Fe/sub 1-x/Ni/sub x/Sb/sub 3/ ribbons Fe/sub - 1-x/Ni/sub -x/ Sb/sub - 3/带的热电性能

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667153

M. Hasaka, H. Kitagawa, K. Matano, T. Morimura, S. Kondo

{"title":"Thermoelectric properties of Fe/sub 1-x/Ni/sub x/Sb/sub 3/ ribbons","authors":"M. Hasaka, H. Kitagawa, K. Matano, T. Morimura, S. Kondo","doi":"10.1109/ICT.1997.667153","DOIUrl":"https://doi.org/10.1109/ICT.1997.667153","url":null,"abstract":"This paper deals with the microstructures and thermoelectric properties of Fe/sub 1-x/Ni/sub x/Sb/sub 3/ ribbons between x=0 and 1.0. The ribbons were fabricated by casting on a rotating copper roll with the surface velocity of 10 m/s, and then annealed for 3.6 ks at 873 K. The microstructures were investigated by means of X-ray diffraction measurements and transmission electron microscopic observations. The CoAs/sub 3/ type of structure, namely skutterudite structure, appeared as well as the other structures of FeSb/sub 2/, NiSb/sub 2/ and Sb below x=0.45 and above 0.55. Only the skutterudite appeared and the other structures disappeared between x=0.45 and 0.55. The thermoelectromotive force and electrical resistivity were measured under a vacuum from 300 K to 670 K. The thermoelectromotive force was of p-type of semiconductor for x<0.5 and of n-type for x>0.5. The electrical resistivity recorded a maximum at x=0.5. The curve of electrical resistivity versus x was asymmetric at x=0.5. The electrical resistivity was larger for x<0.5 than for x>0.5 at the same deviation from x=0.5. The power factor, which was estimated from the thermoelectromotive force and electrical resistivity, reached to maximums at x=0.4 and x=0.6, and was small at x=0.5 at 300 K.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129938577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Unsteady-state thermoelectric response for a thermal pulse in semiconductors 半导体热脉冲的非稳态热电响应

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667639

G.N. Logvinov, Yu.V. Drogobitskiy, Y. Gurevich, A.F.C. Cachez, O. Titov

引用次数: 1

Heterostructure integrated thermionic refrigeration 异质结构集成热离子制冷

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667610

A. Shakouri, J. Bowers

引用次数: 17

Transport coefficients of InSb in a strong magnetic field InSb在强磁场中的输运系数

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667046

H. Nakamura, K. Ikeda, S. Yamaguchi

引用次数: 10

Generalized formulas to express maximum temperature difference for two-stage thermoelectric cooling modules 两级热电冷却模块最大温差的广义表达式

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667621

D. Hyun, N.V. Kolomoets, T. Oh, Jong-Seung Hwang, J. Shim

引用次数: 0

On the theory of thermopower in random two-component semiconductor systems 随机双组分半导体系统的热功率理论

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667168

I. I. Fishchuk

引用次数: 0

Influence of potential barriers on the thermoelectric properties of PbTe thin films 势垒对PbTe薄膜热电性能的影响

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667113

Z. Dashevsky

{"title":"Influence of potential barriers on the thermoelectric properties of PbTe thin films","authors":"Z. Dashevsky","doi":"10.1109/ICT.1997.667113","DOIUrl":"https://doi.org/10.1109/ICT.1997.667113","url":null,"abstract":"The PbTe films, 0.4-3 /spl mu/m thick, were formed on different substrates by the method of flash evaporation. The samples had a single crystal structure with blocks and the angle of misorientation was /spl les/1/spl deg/. The dimensions of the blocks were /spl sim/1 /spl mu/m for the films on mica. Block boundaries were a system of edge dislocations. On one side of each dislocation there was a region of compression and on the other a region of dilatation. Regardless of the sign of the deformation potential, potential energy relief is formed near a block boundary. Estimates obtained using parameters of bulk PbTe have shown that the energy barrier can reach 0.1 eV. The electrical conductivity /spl sigma/, Seebeck coefficient S, Hall coefficient R, and Nernst-Ettingshausen coefficient Q were measured in the 80-500 K range. A comparison with bulk PbTe single crystals with the same charge concentration indicates that the films were characterized by a higher parameter S/sup 2//spl sigma/. This difference was attributed to energy-selective carrier scattering by potential barriers. The potential relief in PbTe thin films was obtained using an electron-beam induced current. Doping of PbTe films with certain impurities can be used to control their barrier properties.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"241 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115574901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5