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XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)最新文献

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Thermoelectric properties of MNiSn (M=Ti,Zr,Hf) single crystals and related alloys MNiSn (M=Ti,Zr,Hf)单晶及相关合金的热电性能
XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667192
W. Kafer, K. Fess, C. Kloc, K. Friemelt, E. Bucher
{"title":"Thermoelectric properties of MNiSn (M=Ti,Zr,Hf) single crystals and related alloys","authors":"W. Kafer, K. Fess, C. Kloc, K. Friemelt, E. Bucher","doi":"10.1109/ICT.1997.667192","DOIUrl":"https://doi.org/10.1109/ICT.1997.667192","url":null,"abstract":"During the last few years a growing interest in new material classes for thermoelectric applications, such as intermetallic compounds, could be observed. Among others, the compounds MNiSn (where M=Ti,Zr,Hf) represent one of those systems and prompted us to study their properties thoroughly. In contrast to the commonly used arc melting followed by long time heat treatment, we prepared our samples by melting the elements using a Sn flux technique. The composition and structural quality was checked by different techniques, including X-ray diffraction and energy dispersive X-ray analysis EDX. We determined the thermoelectric properties over a wide temperature range and were able to evaluate the figure of merit in the range between 90 and 360 K. To reduce the thermal conductivity the possibility of alloying these ternaries was explored.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130985812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Fabrication and characterization of Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/ based thermoelectric materials by powder-extrusion-sintering technique 粉末挤压烧结法制备Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3基热电材料及表征
XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.666978
Byoung-Gue Min, K. Jang, D. Hyun, Dong-Hi Lee
{"title":"Fabrication and characterization of Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/ based thermoelectric materials by powder-extrusion-sintering technique","authors":"Byoung-Gue Min, K. Jang, D. Hyun, Dong-Hi Lee","doi":"10.1109/ICT.1997.666978","DOIUrl":"https://doi.org/10.1109/ICT.1997.666978","url":null,"abstract":"Despite high thermoelectric performance, the commercial applications of Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/ based thermoelectrics are limited mainly because of production cost due to complicated processing steps. In this study, a new approach to the powder-extrusion-sintering method, which is intended to fabricate a sound sintered material by the simultaneous application of pressure and heat, was investigated. This method is expected to be suitable for low cost production of Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/ materials because of the possibility of semi-continuous fabrication processing. It was possible to achieve high density (/spl ges/95% of theoretical density) products by adjusting variables, such as; die angle, die hole length, powder size, extrusion pressure and temperature. Thermoelectric properties of sintered specimens were measured, and discussed to achieve optimum fabrication conditions.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131048232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Current state of Peltier cooling 珀尔帖冷却的当前状态
XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.666972
J. Stockholm
{"title":"Current state of Peltier cooling","authors":"J. Stockholm","doi":"10.1109/ICT.1997.666972","DOIUrl":"https://doi.org/10.1109/ICT.1997.666972","url":null,"abstract":"The performances of Peltier cooling depend first of all, on the thermoelectric properties of the thermoelectric (TE) materials and secondly on the thermal design. A survey will be given of present and future TE materials, bulk and thin film. The technologies of manufacturing the materials and of manufacturing TE modules (a rigid assembly of TE couples) will be presented with future trends. Cooling systems from milliwatts to kilowatts with temperature differentials from a few K to more than 100 K will be examined. Present day and pending applications will be reviewed. The figure of merit Z is the best overall parameter to characterize TE material, We will examine, for a standard air-air modular cooling unit, the influence of higher values of Z, on the cooling power and the coefficient of performance COP (=cooling power/electrical power). Also the influence on the cost of the system will be estimated. The COP of TE is compared to the COP of a small HFC type compressor. The aspect of development cost will be addressed as it is a major drawback to the increase of new developments.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"103 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131268643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Galvanomagnetic and thermoelectric measurements on polycrystalline Bi/sub 88/Sb/sub 12/ 多晶Bi/sub - 88/Sb/sub - 12/的电磁和热电测量
XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667061
H. Goldsmid, E. H. Volckmann
{"title":"Galvanomagnetic and thermoelectric measurements on polycrystalline Bi/sub 88/Sb/sub 12/","authors":"H. Goldsmid, E. H. Volckmann","doi":"10.1109/ICT.1997.667061","DOIUrl":"https://doi.org/10.1109/ICT.1997.667061","url":null,"abstract":"Measurements of the electrical conductivity, Seebeck coefficient, Hall coefficient and magnetoresistance of Se-doped, Sn-doped and undoped Bi/sub 88/Sb/sub 12/ have been made over the temperature range 100 K to 300 K using transverse magnetic fields of up to 1 tesla. The material was polycrystalline and prepared by powder metallurgy. A simplified two-carrier theory is applied to the analysis of the experimental data and is shown to give a good qualitative description of the results. It is shown that the electrons and light holes have effective masses of the order of one-tenth of the free electron mass. On the other hand, the heavy holes have an effective mass in excess of the free electron mass.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123717046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Rapid method of defining the quality of multistage thermoelectric cooler based on measurements of voltage from every stage 基于每级电压测量的多级热电冷却器质量的快速定义方法
XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667620
I. Drabkin, O. Jouranlev
{"title":"Rapid method of defining the quality of multistage thermoelectric cooler based on measurements of voltage from every stage","authors":"I. Drabkin, O. Jouranlev","doi":"10.1109/ICT.1997.667620","DOIUrl":"https://doi.org/10.1109/ICT.1997.667620","url":null,"abstract":"A method for defining the quality of multistage thermoelectric coolers is proposed. This method is based on measurements of voltage from every stage of the cooler with the current on and at the first moment after switching it off. Heat transfer with ambient environment is taken into consideration. This method also takes into account the thermal load for the lower stage received from the upper one. The causes which can lead to the wrong results are also investigated.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128200868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Complex bismuth chalcogenides as thermoelectrics 作为热电材料的络合铋硫族化合物
XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667185
D. Chung, T. Hogan, J. Schindler, L. Iordarridis, P. Brazis, C. Kannewurf, Baoxing Chen, C. Uher, M. Kanatzidis
{"title":"Complex bismuth chalcogenides as thermoelectrics","authors":"D. Chung, T. Hogan, J. Schindler, L. Iordarridis, P. Brazis, C. Kannewurf, Baoxing Chen, C. Uher, M. Kanatzidis","doi":"10.1109/ICT.1997.667185","DOIUrl":"https://doi.org/10.1109/ICT.1997.667185","url":null,"abstract":"A solid state chemistry synthetic approach towards identifying new materials with potentially superior thermoelectric properties is presented. Materials with complex compositions and structures also have complex electronic structures which may give rise to high thermoelectric powers and at the same time possess low thermal conductivities. The structures and thermoelectric properties of several new promising compounds of K-Bi-S, K-Bi-Se, and Cs-Bi-Te are discussed.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114374040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Geometric contribution to the measurement of thermoelectric power and Nernst coefficient in a strong magnetic field 对强磁场中热电功率和能思特系数测量的几何贡献
XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667051
K. Ikeda, H. Nakamura, S. Yamaguchi
{"title":"Geometric contribution to the measurement of thermoelectric power and Nernst coefficient in a strong magnetic field","authors":"K. Ikeda, H. Nakamura, S. Yamaguchi","doi":"10.1109/ICT.1997.667051","DOIUrl":"https://doi.org/10.1109/ICT.1997.667051","url":null,"abstract":"For the measurement of thermoelectric power and Nernst coefficient, we used two kinds of shapes for a sample. One is the \"bridge shape\" and the other is, we call, \"fat-bridge shape\". The latter has 5 times wider main body than the former. We used pure n-InSb in this experiment, whose carrier concentration measured at 77 K was 6.6/spl times/10/sup -14/ cm/sup -3/. The length of sample is 17 mm and the temperature difference induced between the edges in that direction was about 10/spl deg/C or 100/spl deg/C near the room temperature range of 0 to 100/spl deg/C. Magnetic induction added in the perpendicular direction to the temperature gradient was in the range of 0 up to 4 Tesla. In the case of \"fat bridge shape\", we detected about 10% smaller Nernst coefficient and 1 to 10% smaller thermoelectric power comparing to the \"bridge shape\". We suppose this phenomena is due to the geometric contribution on the different shape of samples.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116030019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Layer by layer growth of Bi/sub 2/Te/sub 3/ epitaxial thermoelectric heterostructures Bi/sub 2/Te/sub 3/外延热电异质结构的逐层生长
XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.666981
Y. Boĭkov, V. Danilov, T. Claeson, D. Erts
{"title":"Layer by layer growth of Bi/sub 2/Te/sub 3/ epitaxial thermoelectric heterostructures","authors":"Y. Boĭkov, V. Danilov, T. Claeson, D. Erts","doi":"10.1109/ICT.1997.666981","DOIUrl":"https://doi.org/10.1109/ICT.1997.666981","url":null,"abstract":"Epitaxial films of n- and p-type (0001)Bi/sub 2/Te/sub 3/ with carrier concentrations between 1/spl times/10/sup 18/ and 8/spl times/10/sup 19/ cm/sup -3/ have been grown by hot wall epitaxy at the surface of mica. Granular textured films have been grown on barium fluoride substrates. A regular system of growth steps of 1 nm height was observed at the surface of the Bi/sub 2/Te/sub 3/ films grown on mica at 600 K. The spirals (m/spl ap/10/sup 6/ cm/sup -2/) were detected by AFM at the surface of the thermoelectric films when substrate temperature was increased to 640 K. Steps at the surface of freshly cleaved BaF/sub 2/ substrate promote the formation of a grains in the Bi/sub 2/Te/sub 3/ film and rough surface. The /spl alpha/ /sup 2//spl sigma/ for the Bi/sub 2/Te/sub 3/ films with electron and hole conductance at 300 K was in the range 40-60 /spl mu/W cm/sup -1/ K/sup -2/.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121447055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Micro thermoelectric coolers for integrated applications [and semiconductor laser packaging] 集成应用的微型热电冷却器[和半导体激光封装]
XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667612
L. Rushing, A. Shakouri, P. Abraham, J. Bowers
{"title":"Micro thermoelectric coolers for integrated applications [and semiconductor laser packaging]","authors":"L. Rushing, A. Shakouri, P. Abraham, J. Bowers","doi":"10.1109/ICT.1997.667612","DOIUrl":"https://doi.org/10.1109/ICT.1997.667612","url":null,"abstract":"A different approach for manufacturing arrays of micro thermoelectric coolers using integrated circuit technology is presented. The idea is to fabricate a synthetic wafer containing the necessary thermoelectric elements by first bonding alternating p and n type wafers and then slicing them to obtain an array of thermocouples. This array is then metallized using standard photolithography and evaporation techniques to yield an array of coolers. To demonstrate this approach, six element Bi/sub 2/Te/sub 3/ cooler arrays were made and characterized. In this paper scaling laws, processing details, practical limitations, and preliminary experimental results are discussed.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115456041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Effects of doping Pd/Pt in CoSb/sub 3/ crystals on electrical and thermoelectric properties CoSb/ sub3 /晶体中掺杂Pd/Pt对电学和热电性能的影响
XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667145
H. Tashiro, Y. Notohara, T. Sakakibara, H. Anno, K. Matsubara
{"title":"Effects of doping Pd/Pt in CoSb/sub 3/ crystals on electrical and thermoelectric properties","authors":"H. Tashiro, Y. Notohara, T. Sakakibara, H. Anno, K. Matsubara","doi":"10.1109/ICT.1997.667145","DOIUrl":"https://doi.org/10.1109/ICT.1997.667145","url":null,"abstract":"Double doping of palladium and platinum is Skutterudite CoSb/sub 3/ has been studied to improve thermoelectric properties. It was found that the solubility limit of Pd and Pt in CoSb/sub 3/ crystal amounted to about 10 at% and substitution of Pd and Pt for Co occurred. The carrier concentration increased to about 5/spl times/10/sup 20/ cm/sup -3/ due to a higher degree of solutioning of Pd and Pt by double doping than that of Pd or Pt by single doping. Electrical conductivity of /spl sigma/=1950 S/cm at room temperature could be obtained for the double doping of 5 at% Pd and 5 at% Pt. Heavy doping by Pd and Pi was found to significantly reduce the lattice thermal conductivity, leading to the decrease in thermal conductivity from 0.1 (non-doped crystal) to 0.05 W/cm K. As a result, the figure of merit value Z was about 1.2/spl times/10/sup -3//K at temperatures between 500 and 800 K, and the maximum ZT=0.9 was obtained at 750 K.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123231447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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