XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)最新文献

{"title":"Peculiarities of production n-Bi/sub 2/(Te,Se)/sub 3/ and p-(Bi,Sb)/sub 2/Te/sub 3/ in conditions of structural superplasticity","authors":"O. B. Sokolov, S. Skipidarov, N. I. Duvankov, E. V. Zaitsev","doi":"10.1109/ICT.1997.666990","DOIUrl":"https://doi.org/10.1109/ICT.1997.666990","url":null,"abstract":"Superplasticity is important, primarily, due to the fact that intensive plastic deformations can be created under low loads, with the formation of material with a homogeneous structure in cross-section. The establishment of conditions providing for the apparent superplasticity acquires special importance for the realization of plastic deformation of thermoelectric materials. For this purpose the authors have investigated the process of hot extrusion of n-Bi/sub 2/(Te,Se)/sub 3/ and p-(Bi,Sb)/sub 2/Te/sub 3/ metal-ceramic billets through conical matrix both in isobaric and isothermic conditions.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121114517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structure and transport properties of microcrystalline SiGe films","authors":"F. Edelman, M. Stolzer, T. Raz, Y. Komem, C. B. Vining, H. Zeindl, P. Zaumseil","doi":"10.1109/ICT.1997.667091","DOIUrl":"https://doi.org/10.1109/ICT.1997.667091","url":null,"abstract":"Amorphous Sil-xGex films (x=O, 0.25, 0.5,0.75 and 1, having Boron concentrations of 5.1018, 5.1019 and 5-1$Ocm-3), were deposited at low temperature by a molecular beam processing on SiO2/Si(001) substrates. Samples were studied by in-situ TEM and in-situ XRD to follow the crystallization process. In addition, transport properties were studied in samples which were annealed in vacuum by a hot-wall furnace at temperatures between 500 to 90O0C for 1 hour. The microstructure of B-doped SiGe films is characterized by a relatively large grain size (about lpm). The si0.5Gf!Q5 films have a rather high and temperature independent Hdl mobility (25 to 60 cm2Nsec), Seebeck coefficient (-150 to 250 pV/K at m m temperature) and conductivity ((200 to 2000 (Ohm.cm)-l at m m temperature). Therefore, the highly-doped pc-SiGe films that we produce in the present research project show transport characteristics comparable to the sintered SiGe materials for thermoelectric applications.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130334784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A critical evaluation of today's thermoelectric modules","authors":"T.M. Ritzer, P. G. Lau, A. Bogard","doi":"10.1109/ICT.1997.667606","DOIUrl":"https://doi.org/10.1109/ICT.1997.667606","url":null,"abstract":"Today's thermoelectric module (TEM) users are experiencing a growing world marketplace filled with new or undiscovered sources for components. Selecting the right thermoelectric module supplier for a particular application is not as easy as it once was. New applications in thermoelectrics are occurring faster now than ever before as more people learn the benefits of using the technology. As these applications become more diversified and the variety of the customer's needs expands, other criteria should be considered before selecting a TEM supplier based solely on price, performance and delivery. This paper examines TEMs produced by manufacturers from all over the world. A module performance survey illustrates the range of products available today. Some of the TEM's were selected from this survey to undergo a variety of quality and reliability tests. These tests include electro-thermo cycling, high temperature ramp and soak, and thermal pulse. In addition, dimensional and visual inspections were performed and the results are included as a part of the overall \"vendor qualification\" process described in this paper.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129562984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Defect structure of undoped and Pb-doped Bi/sub 2/Se/sub 3/ single crystals","authors":"J. Horák, P. Lošt’ák, J. Navrátil, S. Karamazov","doi":"10.1109/ICT.1997.666976","DOIUrl":"https://doi.org/10.1109/ICT.1997.666976","url":null,"abstract":"We present the results of studies of some transport coefficients and optical properties in the IR region of both undoped and Pb-doped Bi/sub 2/Se/sub 3/ single crystals with the aim of explaining some anomalies in the dependence of the concentration of free current carriers on the content of incorporated Pb atoms.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130620830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of improved modules for the economic recovery of low temperature waste heat","authors":"D. Rowe","doi":"10.1109/ICT.1997.667586","DOIUrl":"https://doi.org/10.1109/ICT.1997.667586","url":null,"abstract":"Waste heat recovery is an application of thermoelectrics where a high conversion efficiency is not of major importance. The economic competitiveness of this technology is determined by the capital investment (cost per watt) and reliability (module mean-time-between failures). This paper reports progress made in developing an improved module for use in the economic thermoelectric recovery of low temperature waste heat. It is predicted that these improved modules will generate at least three times the electrical power per unit area compared with Peltier modules currently available and reduce the break-even time (operating period required to produce electricity at a cost which matches that of the major electrical power generating utilities) from the present seven years to less than three years.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134310124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Drag effects in /spl beta/-iron disilicide","authors":"M. Fedorov, V. Zaitsev, Y. Ivanov, V. V. Popov, M. Khazan","doi":"10.1109/ICT.1997.667130","DOIUrl":"https://doi.org/10.1109/ICT.1997.667130","url":null,"abstract":"The results of an experimental study of the Seebeck coefficient, electrical and thermal conductivity of pure and doped /spl beta/-FeSi/sub 2/ polycrystals in the temperature range 4.2-1000 K are presented in this paper. The contributions of possible mechanisms of current carrier transport to the Seebeck coefficient are discussed. The optical phonon drag effect contribution to the Seebeck coefficient is calculated for a band conduction mechanism. The reasons for the gigantic Seebeck coefficient at low temperature are discussed.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134456304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermoelectric properties of /spl beta/-FeSi/sub 2/ single crystals prepared with 5N source material","authors":"A. Heinrich, G. Behr, H. Griessmann","doi":"10.1109/ICT.1997.667128","DOIUrl":"https://doi.org/10.1109/ICT.1997.667128","url":null,"abstract":"Thermopower and electrical conductivity of undoped /spl beta/-FeSi/sub 2/ single crystals have been investigated between 4 K and 350 K in dependence on the deviation from strict stoichiometry within the homogeneity range. The crystals have been prepared by chemical transport reaction in a closed system with iodine as transport agent using high purity source material. Both electrical conductivity and thermopower depend on the composition within the homogeneity range which is explained by different intrinsic defect concentrations at the Si-rich and Fe-rich phase boundaries. Low ohmic material was only obtained by additional doping. At the Si-rich phase boundary the thermopower shows at low temperatures a significant phonon drag contribution with /S/>1000 /spl mu/V/K.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129853370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bi/sub 2/Te/sub 3/ thin films grown by MOCVD process","authors":"A. Boulouz, A. Giani, F. Pascal-Delannoy, A. Foucaran, A. Boyer","doi":"10.1109/ICT.1997.667059","DOIUrl":"https://doi.org/10.1109/ICT.1997.667059","url":null,"abstract":"The growth of Bi/sub 2/Te/sub 3/ thin films by metal organic chemical vapor deposition (MOCVD) using diethytellurium and trimethylbismuth as tellurium and bismuth sources respectively is investigated on pyrex substrates. The results of growth rate, morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The prepared films were always n-type. Film properties, such as electrical resistivity, mobility, carrier concentration, thermoelectric power and X-ray diffraction were studied at 300 K. Increasing VI/V ratio was found to reduce the electrical resistivity to 12 /spl mu//spl Omega/.m. The Hall mobility varies from 28 and 150cm/sup 2//V.s. The figure-of-merit obtained was Z=2.48/spl times/10/sup -3/ K/sup -1/. These initial results suggest a significant potential of MOCVD growth for large scale production of thermoelectric material.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132948634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural- Chemical Characterization of Semiconductors Using the Seebeck and Thermal Conductivity Quality Factors","authors":"D. Tuomi","doi":"10.1109/ICT.1997.666992","DOIUrl":"https://doi.org/10.1109/ICT.1997.666992","url":null,"abstract":"The eduation of alloy qualtty utihing the electron mobility effative mass product. po(m*/mo)M, for acoustic mode alloy scatking of electnms, the seebeck quahty fiictor, Qs, and an empirically defmed thermai cmductivity quality fiicbr, p r o w insight mto (3pliOns for procfucing improved superior ~ l e c i r i c alloys. dudi ion. In 1961, introduced the seebeck Quality Factor, Qs, (l), to relate the alloy Seebeck coefficient to &e electrical cmdudiitty and the thermal cdwtiviw suallty W r y Qk, (2), to Elate the tfimal mdudivity to the electrical wdwtivity of tfiermoelectric energy conversicm alloys. The material parametem supplemented the engineering pameta: the power coefficient andthefigweofmerit TheSeebeckquality,Qs,istheelectmn mobility eEctive electron mass pmduct, h ( m * h p , for acoustic mock a k y scattering of electmm m units of un’holt sec. ‘The thermal condllctivify qual~ty, Qk, is empirically derived as a lattice cxmpmnt of theanal condllctivify for a degenerate semioottductorrcorrectedforthereductianmthennal&ivrty &dwsth the alloy doping (3) UIh Of ”l(. The designation of Qs and Qk recognizes tfie dependence of the variables on mated c “ i t i o n and pIocessing. c!“t values of Qs and Qk for a series of samples reflect the operation ofapureextrinscdopantvariableasillustrakdmFig. 1 . Alloy samples became chamcteriax~ by the variables S, o, k, s’o, Z, QS, Qk,andM. . ? h e Q s c w v e s m F i g . 2 w e r e u s e d i n ~ coohngdoys. Fig. 3showsthe logadmic scale farm Qs curves usedto evaluate literature data. The Qs relatitp the power coefficient QdQk = M =32.5 is shown m Fig. 4 . The material pa”&er, h4, is related to Zas shown m Fig. 5 . In 1961, Donald Tuomi d John Horwath began accumulating literature on thennoelectric alloys which, where possible, was evaluatedby Qs, Qk, and M. The private Boa-wamer research pmgram sought alloy options opening fhermoelectric mergy m v e & n to larger scale cxmtnfxcial exploitation. At this time, many mateds R & D prig\" were bang closed because little progress was evident towadachievingthelargescaleapplicatiom. Though very high figure of merit alloys we^ not e“bd, signScant progress was made m describing the gena challenge. ‘Ihe foJlowing dimssh focuses upon new options revealed limugb the applicatim of quality Ewtm","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114729911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermoelectric generator modules and blocks","authors":"L. Anatychuk, V. Razinkov, Y. Rozver, V. Mikhailovsky","doi":"10.1109/ICT.1997.667600","DOIUrl":"https://doi.org/10.1109/ICT.1997.667600","url":null,"abstract":"Characteristics and elements of a new type structure of thermoelectric modules for electric power generation with output power of 10 W have been presented. A parametric series of the indicated modules with rated output voltage of: 0.2; 0.4; 0.8; 1.6; 3.2 and 6.4 V is proposed. Modules are designed for the use in thermoelectric generators of different purposes along with heat sources use that provide operation temperature level of the module warm side of 250-300/spl deg/C. Optimization methods of known thermoelectric materials for the indicated modules conversion efficiency at a level of more than 6% have been examined. The study results of commutations and anti-diffusion layers new types effect on the modules lifetime and resistance to climatic and temperature action have been given. The reliability investigation results of the module as a whole are presented. Examples of modules with heat exchangers arrangement into functional blocks that provide a user necessary overall dimensions and electric parameters for current and voltage are also presented. Variants of specific applications of modules and blocks in thermoelectric generators with catalytic heat sources have been examined.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128655428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}