A. Foucaran, A. Sackda, A. Giani, F. Pascal-Delannoy, A. Boyer
{"title":"Flash evaporated layers of (Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/)(N) and (Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/)(P) used as micro-module-Peltier","authors":"A. Foucaran, A. Sackda, A. Giani, F. Pascal-Delannoy, A. Boyer","doi":"10.1109/ICT.1997.667057","DOIUrl":"https://doi.org/10.1109/ICT.1997.667057","url":null,"abstract":"(Bi/sub 2/Te/sub 3/)/sub 0.9/(Bi/sub 2/Se/sub 3/)/sub 0.1/ for n type material powder and (Bi/sub 2/Te/sub 3/)/sub 0.25/(Sb/sub 2/Te/sub 3/)/sub 0.75/ for p type material powder were evaporated by flash evaporation technique. We obtained a value of Z equal to 0.21/spl times/10/sup -4/ K/sup -1/ for /spl alpha/=40 /spl mu/V/K and /spl rho/=50 /spl mu//spl Omega/.m for p type material and Z about 0.17/spl times/10/sup -3/ K/sup -1/ for a=90 /spl mu/V/K and /spl rho/=30 /spl mu//spl Omega/.m for n type material (at 300K), for 1 /spl mu/m layers thickness deposited over polyimide substrate, before annealing. We show that after annealing at 250/spl deg/C under He atmosphere, the figure of merit of the layers increases to Z=3.2/spl times/10/sup -3/ K/sup -1/ for /spl alpha/=240 /spl mu/V/K and /spl rho/=12 /spl mu//spl Omega/.m for p type material and Z=1.6x10/sup -3/ K/sup -1/ for /spl alpha/=200 /spl mu/V/K and /spl rho/=15 /spl mu//spl Omega/.m for n type material (at 300 K). With these fabrication parameters we realised three different structures of micro-module Peltier (MMP) junctions and we obtained a maximum value for temperature drop between hot and cold sides of about 3.4 K. This result is very promising in order to develop micro-module Peltier (MMP) effects.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"36 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129340698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermoelectric power generator design and selection from TE cooling module specifications","authors":"R. Buist, P. G. Lau","doi":"10.1109/ICT.1997.667589","DOIUrl":"https://doi.org/10.1109/ICT.1997.667589","url":null,"abstract":"There are many applications where thermoelectric (TE) coolers can be used effectively as power generators. In fact, where temperatures are less than 500 K, TE cooling modules are the best choice for power generation, whether it be from a cost or performance standpoint. The literature available on this subject is scarce and very limited in scope. This paper describes the configuration, limitations and performance of TE coolers to be used as power generators. Also presented are performance curves generated using a new finite element thermoelectric model. This enables the user to design the optimum TE module and select the nearest TE module (normally used for cooling) for this power generation application. A simple process is presented which provides detailed power generation specification (temperatures, watts in, current and voltage out) using the TE module's cooling specifications.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128496192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Straehle, S. Rath, K.-J. Klingesberger, T. Nissel, S. G. Doettinger, C.A. Doettinger, R. Huebener, S. Kemmler‐sack
{"title":"Peltier cooling of superconducting electronics","authors":"J. Straehle, S. Rath, K.-J. Klingesberger, T. Nissel, S. G. Doettinger, C.A. Doettinger, R. Huebener, S. Kemmler‐sack","doi":"10.1109/ICT.1997.666993","DOIUrl":"https://doi.org/10.1109/ICT.1997.666993","url":null,"abstract":"The increase of the superconducting transition temperature in some of the cuprate superconductors to values higher than 130 K is generating strong interest in the exploration of Peltier cooling for the operation of superconducting electronics. In this case, we need materials with a sufficiently large figure of merit z down to temperatures near 100 K. We have performed measurements of the Seebeck coefficient, the thermal conductivity and the electric resistivity in the temperature range 80-300 K of Bi/sub 2/Te/sub 3/-based materials with admixtures of Sb and Se, and studied the influence of pulverization and sintering. The resulting z-values are reported. The influence of sintering on the microstructure of the samples has been studied by SEM.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128529720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Shinohara, Y. Imai, Y. Isoda, I. Nishida, H. Kaibe, I. Shiota
{"title":"Thermoelectric properties of segmented Pb-Te systems with graded carrier concentrations","authors":"Y. Shinohara, Y. Imai, Y. Isoda, I. Nishida, H. Kaibe, I. Shiota","doi":"10.1109/ICT.1997.667159","DOIUrl":"https://doi.org/10.1109/ICT.1997.667159","url":null,"abstract":"Thermoelectric properties have been investigated on n-type PbTe material composed of 2 segments with different electron concentrations ne. The 2-segment material was prepared by liquid state diffusion bonding of two kinds of solidified ingots. ne of the ingots were 3/spl times/10/sup 24/ and 6/spl times/10/sup 25//m/sup 3/. The ingot of 3/spl times/10/sup 24//m/sup 3/ had higher power factor below 500 K, while the ingot of 6/spl times/10/sup 25//m/sup 3/ had higher factor above 500 K. The ingot with higher ne was for higher temperature use. When the temperature difference was given with the jointed interface of more than 450 K, the 2-segment material was found to give higher maximum power than the original ingots. From these results, the segmentation with graded ne is effective in improving the power generating performance of n-type PbTe.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116967797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Hasezaki, H. Tsukuda, A. Yamada, S. Nakajima, Y. Kang, M. Niino
{"title":"Thermoelectric semiconductor and electrode-fabrication and evaluation of SiGe/electrode","authors":"K. Hasezaki, H. Tsukuda, A. Yamada, S. Nakajima, Y. Kang, M. Niino","doi":"10.1109/ICT.1997.667602","DOIUrl":"https://doi.org/10.1109/ICT.1997.667602","url":null,"abstract":"Joints between a silicon-germanium thermoelectric semiconductor and electrodes were prepared by hot-pressing. Tungsten or carbon electrodes were joined to either side of n-type Si/sub 0.8/Ge/sub 0.2/ (P 0.3 at.%) respectively, with thin sheets of titanium foil inserted between them, and then pressed and joined at 1523 K in vacuum. The size of the resulting electrode/SiGe semiconductor/electrode units measured 5 mm/spl times/ 5 mm/spl times/9 mm. Observations through SEM and EPMA showed the presence of many voids in the junction layers of the SiGe/tungsten electrodes, whereas the SiGe/carbon electrodes exhibited no voids in their junction layers. In the SiGe/carbon electrodes, the titanium atoms were enriched in the junction layer, and other atoms also remained undiffused. In the SiGe/tungsten electrodes, the tungsten and silicon atoms showed counter diffusion. Resistance and Seebeck coefficient of the carbon/SiGe/carbon electrodes were measured in the temperature range from 600 to 1100 K. Resistance ranged from 0.012 to 0.015 /spl Omega/, and the Seebeck coefficient from 200/spl times/10/sup -6/ to 250/spl times/10/sup -6/ V/K. To evaluate the upper limit of heating dependence, the carbon/SiGe/carbon electrodes were exposed in an argon atmosphere at 1273 K and 1373 K for 300 hours. After exposure testing, SEM observation showed the presence of many voids in the junction layer of the SiGe/carbon electrode, which had not previously shown any voids either at the stage of joining by hot-pressing or exposure at 1273 K.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115596595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jae-Shik Choi, Hee-Jeong Kim, Hang-Chong Kim, T. Oh, D. Hyun, Heewoong Lee
{"title":"Thermoelectric properties of n-type (Pb/sub 1-x/Ge/sub x/)Te fabricated by hot pressing method","authors":"Jae-Shik Choi, Hee-Jeong Kim, Hang-Chong Kim, T. Oh, D. Hyun, Heewoong Lee","doi":"10.1109/ICT.1997.667089","DOIUrl":"https://doi.org/10.1109/ICT.1997.667089","url":null,"abstract":"To investigate the effects of solid solution alloying on thermoelectric properties of PbTe-based thermoelectric materials, 0.3 wt% Bi-doped (Pb/sub 1-x/Ge/sub x/)Te alloy powders (0/spl les/x/spl les/0.15) were fabricated by \"melting/grinding\" process, and hot-pressed at 650/spl deg/C and 750/spl deg/C for 1 hour in vacuum. At temperatures ranging from 25/spl deg/C to 450/spl deg/C, the (Pb/sub 1-x/Ge/sub x/)Te alloys exhibited more negative Seebeck coefficient, higher electrical resistivity and lower thermal conductivity with increasing GeTe content. The temperature, where the figure-of-merit of (Pb/sub 1-x/Ge/sub x/)Te reached a maximum, was lowered with increasing GeTe content x. When hot-pressed at 650/spl deg/C, 0.3 wt% Bi-doped PbTe and (Pb/sub 0.9/Ge/sub 0.1/)Te exhibited a maximum figure-of-merit of 1.07/spl times/10/sup -3//K at 400/spl deg/C and 1.25/spl times/10/sup -3//K at 300/spl deg/C, respectively.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114262582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Goryachev, M. Siman, L. Fiyallra, O. Shvartsman
{"title":"Thermoelectric properties of heterogeneous, many-phase and composite materials","authors":"Y. Goryachev, M. Siman, L. Fiyallra, O. Shvartsman","doi":"10.1109/ICT.1997.667166","DOIUrl":"https://doi.org/10.1109/ICT.1997.667166","url":null,"abstract":"The model of formation of the thermoelectric properties of inhomogeneous materials and the system classification of different structural classes and types of the materials is worked out. The analysis of the concentration dependences of thermoelectric properties is performed on the basis of this method. It is found that the thermoelectric properties of inhomogeneous materials are connected with their composition and internal structural characteristics (such as the coefficient of leakage, the leakage threshold, the contact potential difference and the coefficients of skeletonivity, matrixivity, chainivity). The principal possibility of getting a higher thermoelectric figure of merit (TFM), Z, (in comparison with that of the initial material components) is shown. Such a possibility has been realized in the systems Bi/sub 2/Te/sub 3/-C, MnSi/sub 1.73/-CaF as well as in some composite materials, the most essential increase of the TFM being attained in cascade materials.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"06 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127412052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Modeling and minimization of intercascade thermal resistance in multi-stage thermoelectric cooler","authors":"V. A. Semeniouk, D. B. Berzverkbov","doi":"10.1109/ICT.1997.667627","DOIUrl":"https://doi.org/10.1109/ICT.1997.667627","url":null,"abstract":"The problem of achieving highest temperature difference /spl Delta/T in cascade thermoelectric cooler (TEC) is solved with consideration of intercascade thermal resistance. The model of three-dimensional heat spread in substrates is considered. Existence of substrate optimum thickness corresponding to highest /spl Delta/T is established. It is shown that correct choice of substrate configuration permits to receive considerable increase in TEC efficiency. In particular, it concerns short-legged TECs having extremely high heat flux densities.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126048281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Enhanced thermoelectric efficiency near a conductivity threshold","authors":"G. D. Guttman, E. Ben-Jacob, D. Bergman","doi":"10.1109/ICT.1997.667188","DOIUrl":"https://doi.org/10.1109/ICT.1997.667188","url":null,"abstract":"We calculate the thermopower and efficiency of the thermoelectric effect in systems which have a conductivity threshold (as function of the electronic energy). For example, disordered metals near the mobility edge (i.e., at the metal-insulator transition). Near such a threshold the thermopower and thermoelectric efficiency (i.e., figure of merit) are enhanced. The figure of merit ZT can be made much larger than unity, however at the price of low power output. In the presence of minimal lattice heat conductivity we calculate ZT/spl sim/6 near the threshold. The enhancement effect is universal in the sense that it ensues from a competition between two physical mechanisms which sustain the steady-state thermopower. Any system that exhibits an electrical conductivity threshold and low lattice thermal conductivity is a good candidate for observing such an enhancement.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125050754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
W. Roth, R. Kugele, A. Steinhuser, W. Schulz, G. Hille
{"title":"Grid-independent power supply for repeaters in mobile radio networks using photovoltaic/thermoelectric hybrid systems","authors":"W. Roth, R. Kugele, A. Steinhuser, W. Schulz, G. Hille","doi":"10.1109/ICT.1997.667597","DOIUrl":"https://doi.org/10.1109/ICT.1997.667597","url":null,"abstract":"At Fraunhofer ISE, a photovoltaic/thermoelectric hybrid system has been developed as a power supply for repeaters (e.g. mobile telephone repeaters) and integrated into a newly constructed repeater station. A modified thermoelectric generator from the Canadian Global Thermoelectric company has been used as the auxiliary generator. A microprocessor-controlled energy management system (EMS) allows fully automatic operation with minimal use of fossil fuels and appropriate battery operation management. As the auxiliary power supply can support the PV generator in supplying power to the load during periods with little sunlight, a very reliable power supply is achieved. Further, the dimensions of the PV generator and the battery capacity can be reduced without affecting the supply reliability. In Central Europe, for instance, the size of the PV generator can be reduced to a third of that needed for an exclusively PV system, if only 10% of the annual demand is met by the auxiliary generator. This allows a compact construction of the photovoltaic hybrid system and helps the numerous requirements on isolated telecommunications facilities to be fulfilled.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"229 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121109902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}