XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)最新文献_第5页

Damped thermoelectric waves 阻尼热电波

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667633

C. B. Vining

引用次数: 0

Influence of growth conditions on structure, composition homogeneity and mechanical properties of thermoelectric crystals for coolers 生长条件对冷却器用热电晶体结构、成分均匀性和力学性能的影响

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.666989

V. Bublik, K.V. Karataev, V.B. Osvenski, T.B. Sagalova, V. B. Ufimtsev, A. Frolov

{"title":"Influence of growth conditions on structure, composition homogeneity and mechanical properties of thermoelectric crystals for coolers","authors":"V. Bublik, K.V. Karataev, V.B. Osvenski, T.B. Sagalova, V. B. Ufimtsev, A. Frolov","doi":"10.1109/ICT.1997.666989","DOIUrl":"https://doi.org/10.1109/ICT.1997.666989","url":null,"abstract":"The object of this work is to produce by economical method (vertical zone melting) the polycrystalline textured ingots of p- and n-type thermoelectric materials (TEM) based on antimony and bismuth tellurides and selenides solid solutions with high performance parameters (thermoelectric figure-of-merit Z) and diameter not less than 20 mm. Following problems were to be solved: a) the formation of favorable crystallographic orientation with minimum scatter which allows to make use of properties anisotropy to achieve maximum value of Z; b) preparation of solid solutions with reasonably homogeneous composition (along and across the ingot) and reproducible alloying level; c) elucidation of causes of mechanical stresses, that are responsible for cracking, to produce material with adequate mechanical properties. The texture, phase composition, macro- and microscale composition inhomogeneity of solid solution have been studied with X-ray diffraction methods by evaluation of lattice parameter and smearing (broadening) of diffraction maxima. In addition, microheterogeneity was assessed by microhardness measurements coupled with local elemental microanalysis (local X-ray microprobe). The cracking pattern was correlated with microstructure features (using optical metallography and X-ray topography). The slip lines formed by indenter prints during microhardness measurements were used for evaluation of cross-sectional disorder of adjacent grains, whose cleavage planes are parallel to ingot axis.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122397207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Bismuth-telluride films prepared by vacuum-arc plasma method for thermoelectrical transducers 真空电弧等离子体法制备热电换能器用碲化铋薄膜

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667049

I. Gasenkova

{"title":"Bismuth-telluride films prepared by vacuum-arc plasma method for thermoelectrical transducers","authors":"I. Gasenkova","doi":"10.1109/ICT.1997.667049","DOIUrl":"https://doi.org/10.1109/ICT.1997.667049","url":null,"abstract":"The results of using (BiSb)/sub 2/Te/sub 3/ and Bi/sub 2/(TeSe)/sub 3/ films prepared by pulsed vacuum plasma method in contactless thin-film TETs are presented. The devices are compatible in technology and miniaturization degree with microelectronic structures and, hence, can be used as components of special-purpose integrated devices for converting, processing and measuring of electrical signals. Comparison is made between the parameters of two types of differential transducers of identical design with thermobattery branches made of PbTe/GeTe films (reference device) and (BiSb)/sub 2/Te/sub 3//Bi/sub 2/(TeSe)/sub 3/ films, respectively. The films were deposited by flash evaporation and pulsed plasma methods onto anodic Al/sub 2/O/sub 3/ wafers used as a base for the device. It is found that the bismuth-telluride TET shows a much higher conversion coefficient as compared to the reference device. Thus, the conversion coefficient increases from 6 to 12 V/W in case of plasma method and from 6 to 8V/W in case of flash evaporation. The conversion coefficient can be further increased by annealing (BiSb)/sub 2/Te/sub 3//Bi/sub 2/(TeSe)/sub 3/ branches in argon. The transducer works at 5-10/sup 5/ /spl mu/W input power and 0-100MHz input frequency, with the conversion error <1.5%. Another advantage of the (BiSb)/sub 2/Te/sub 3//Bi/sub 2/(TeSe)/sub 3/ TETs is that there is no need for protective film on the branch surface against degradation of device parameters normally found with PbTe/GeTe-based devices due to branch material oxidation. It should also be noted that lower surface resistance of branches subjected to annealing allows formation of thermosensitive elements with lower output resistance on the same wafer area. Besides, for the same rating values of thermosensitive elements, smaller area of dielectric wafer is required and the overall sensor size is smaller.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128116148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Fabrication of a miniature thermoelectric module with elements composed of sintered Bi-Te compounds 用烧结Bi-Te化合物组成的元素制备微型热电模块

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667614

Matsuo Kishi, Y. Yoshida, H. Okano, H. Nemoto, Y. Funanami, M. Yamamoto, H. Kanazawa

{"title":"Fabrication of a miniature thermoelectric module with elements composed of sintered Bi-Te compounds","authors":"Matsuo Kishi, Y. Yoshida, H. Okano, H. Nemoto, Y. Funanami, M. Yamamoto, H. Kanazawa","doi":"10.1109/ICT.1997.667614","DOIUrl":"https://doi.org/10.1109/ICT.1997.667614","url":null,"abstract":"A new manufacturing process of a /spl pi/-shaped miniature thermoelectric module composed of sintered Bi-Te compounds has been developed. The manufacturing process is suitable for mass production as it is comprised of simple technologies such as conventional photolithography technology, microbonding technology using the solder bump method and precise cutting technology using a dicing machine. A miniature module with the dimensions of 3 mm/spl times/3 mm/spl times/1.3 mm in which 102 elements (51 junctions) with the dimensions of 120 /spl mu/m/spl times/120 /spl mu/m in cross section parallel to the substrates and a height of 600 /spl mu/m were included was fabricated while developing the process. The maximum temperature difference /spl Delta/T/sub max/, and the heat absorption Q/sub max/ of the module were 61.3/spl deg/C and 0.36 W, respectively. This indicates that the performance of the module as a cooling device was equivalent to that of conventional modules. The specification for high voltage and low current input, a significant purpose in addition to the miniaturization of the module, was achieved because the maximum voltage V/sub max/ and current I/sub max/ were 6.7 V and 110 mA, respectively.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130553805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 18

Powder processing of thermoelectric materials-focusing on SiGe with new sintering technique 热电材料的粉末加工——以烧结新技术SiGe为重点

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667082

T. Noguchi

引用次数: 13

Expanding the investigation of the thermoelectric properties of rare-earth-filled skutterudites 扩展了稀土填充方菱形矿热电性质的研究

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667144

G. Nolas, H. Lyon, J. Cohn, T. Tritt, G. Slack

引用次数: 3

Preparation and characterization of segmented-type thermoelectric branches of Bi/sub 2/Te/sub 3//PbTe Bi/sub - 2/Te/sub - 3/ PbTe热电支链的制备与表征

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667155

Y. Noda, Y. Kang, M. Niino

引用次数: 1

Thermoelectric properties of p-type Bi-Sb-Te based material prepared by PIES method with conventional ball milling process 传统球磨法制备p型Bi-Sb-Te基材料的热电性能

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.666980

S. Kagawa, H. Satake, M. Sakamoto, Atsushi Yamamoto, T. Ohta

引用次数: 1

Novel high performance thermoelectric microcoolers with diamond substrates 新型高性能热电微冷却器与金刚石衬底

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667622

V. A. Semeniouk, J. Fleurial

引用次数: 31

New low thermal conductivity materials for thermoelectric applications 用于热电应用的新型低导热材料

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) Pub Date : 1997-08-26 DOI: 10.1109/ICT.1997.667183

T. Caillat, J. Fleurial

{"title":"New low thermal conductivity materials for thermoelectric applications","authors":"T. Caillat, J. Fleurial","doi":"10.1109/ICT.1997.667183","DOIUrl":"https://doi.org/10.1109/ICT.1997.667183","url":null,"abstract":"A low lattice thermal conductivity is one of the requirements for achieving high thermoelectric figures of merit. Several low thermal conductivity materials were identified and developed over the past few years at JPL, including filled skutterudites and Zn/sub 4/Sb/sub 3/-based materials. A study of the mechanisms responsible for the high phonon scattering rates in these compounds has demonstrated that materials with highly disordered or complex structures which can accommodate additional atoms in their lattice are likely to have low lattice thermal conductivity values. Several cluster compounds, including the Chevrel phases (Mo/sub 6/Se/sub 8/-type) and Re/sub 6/Te/sub 15/, are just such materials and are currently being investigated at JPL. The crystal structures of the Chevrel phases present cavities which can greatly vary in size and can contain a large variety of atoms ranging from large ones such as Pb to small ones such as Cu. These atoms are not localized in the structure and, depending on their size, can move between different sites and may produce significant phonon scattering. Although most of the Chevrel phases studied until now were reported to be metallic, it was found that semiconducting Chevrel phases can be engineered by controlling the number of electrons per [Mo/sub 6/] cluster. Initial results obtained on some cluster Chevrel phases and Re/sub 6/Te/sub 15/ are presented and discussed. These materials possess very low thermal conductivity values (/spl sim/10 mW/cmK at 300 K) but optimization of their electronic properties will be required to achieve high thermoelectric figures of merit.","PeriodicalId":174813,"journal":{"name":"XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129337169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3