2012 2nd IEEE CPMT Symposium Japan最新文献_第8页

Influence of the power-consumption at non-fundamental frequency on Passive intermodulation generation 非基频功耗对无源互调产生的影响

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523468

K. Takada, D. Ishibashi, N. Kuga

引用次数: 1

Statistical study of nano-scale VLSI interconnect crosstalk and its induced power estimation 纳米级超大规模集成电路互连串扰及其诱导功率估计的统计研究

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523436

M. Mehri, R. Sarvari, A. Seyedolhosseini

引用次数: 0

Effects of additional Ni and Co on microstructural evolution in Sn-Ag-Bi-In solder under current stressing 外加Ni和Co对电流应力下Sn-Ag-Bi-In焊料组织演变的影响

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523429

Youngseok Kim, T. Sugahara, S. Nagao, K. Suganuma, M. Ueshima, H. Albrecht, K. Wilke, J. Strogies

引用次数: 2

Low cost TSV integration for advanced packaging technologies 先进封装技术的低成本TSV集成

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523417

Y. Morikawa, T. Murayama, T. Sakuishi, A. Tanaka, Y. Nakamuta, K. Suu

{"title":"Low cost TSV integration for advanced packaging technologies","authors":"Y. Morikawa, T. Murayama, T. Sakuishi, A. Tanaka, Y. Nakamuta, K. Suu","doi":"10.1109/ICSJ.2012.6523417","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523417","url":null,"abstract":"In recent years, “2.5D silicon interposers” and “Full 3D stacked” technology for high-performance LSI has attracted much attention since this technology can solve interconnection problems using TSV (Through Silicon Via) to electrically connect stacked LSI. 2.5D and 3D Si integration has great advantages over conventional 2D devices such as high packaging density, small wire length, high-speed operation, low power consumption, and high feasibility for parallel processing. The novel etching technology has provided for TSV fabrication which is the epoch-making and practical new technology without “Bosch” method. This new etch technology is “direct etching” method. So far, anisotropic and high Si etch rate with highly photo-resist selectivity is a tall order, but new direct etching can achieve higher than aspect ratio above 10 at the etching speed that is more than 10um/min in TSV of 10um diameter. Of course the selectivity of photo-resist is realized more than 1:30, and the sidewall is the smooth finish less than 50 nm. The direct etch is environment conscious process. This is because it does not use fluorocarbon gases in direct Si etching, which main gases are SF6 and O2. Therefore, this direct etch process is lower cost than gas switching process. In addition, the smooth sidewall has also brought about low cost of deposition processes for PE-CVD and PVD.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125702176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Athermal and tunable VCSELs with a thermally actuated cantilever structure for WDM optical interconnects 用于WDM光互连的具有热驱动悬臂结构的非热可调谐vcsel

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523405

H. Sano, N. Nakata, M. Nakahama, A. Matsutani, F. Koyama

引用次数: 0

Development of low temperature curable positive tone photosensitive dielectric material 低温固化正色调感光介质材料的研制

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523450

A. Tanimoto, K. Abe, S. Nobe, H. Matsutani

引用次数: 2

Experimental study on thermal performance of loop heat pipes with flat evaporator for LSI package LSI封装扁平蒸发器环路热管热性能实验研究

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523475

T. Shioga, Susumu Ogata, Yoshihiro Mizuno

引用次数: 2

Warpage modeling for 3D packages 翘曲建模的3D包

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/EPTC.2012.6507131

M. Amagai, Y. Suzuki

引用次数: 1

Introduction of the automotive application of TSV device 介绍TSV装置在汽车上的应用

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523457

T. Kamada

引用次数: 0

Formation of circuit patterns on the only modification area using selective electroless deposition 用选择性化学沉积法在唯一的修饰区形成电路图案

2012 2nd IEEE CPMT Symposium Japan Pub Date : 2012-12-01 DOI: 10.1109/ICSJ.2012.6523467

K. Baba, M. Sugimoto, M. Watanabe, T. Yumoto

{"title":"Formation of circuit patterns on the only modification area using selective electroless deposition","authors":"K. Baba, M. Sugimoto, M. Watanabe, T. Yumoto","doi":"10.1109/ICSJ.2012.6523467","DOIUrl":"https://doi.org/10.1109/ICSJ.2012.6523467","url":null,"abstract":"The printed wiring board is contained in most electronic parts. A lot of the printed wiring boards are manufactured by the subtractive process. However, the subtractive process needs a lot of numbers of production processes. Therefore, we examined new manufacturing process that the method of forming the metal film only to a necessary part of the substrate. We executed the examination that applied selective electroless plating on the substrate. The UV irradiation and the laser irradiation attracted attention as the pretreatment technique to perform the selective plating. In addition, to solve the problem of short out in the circuit, the examination of anisotropy growth up electroless plating was examined. In these results, anisotropic growth by electroless nickel plating was found to depend on nonlinear diffusion of the Pb and Bi inhibitors at the pattern edges, where the geometry of the film growth changed depending on the species. When Pb was employed, plating growth with a trapezoidal geometry occurred which was advantageous to pattern formation. Moreover, when Pb was used in combination with Bi, the anisotropic growth became possible at lower concentrations. Regarding the selective deposition phenomenon, the direct pattern plating process was improved by initial adsorption of thiourea onto the surface by immersing the substrate in a solution that contained the inhibitor instead of initial selective plating.","PeriodicalId":174050,"journal":{"name":"2012 2nd IEEE CPMT Symposium Japan","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129832992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0