发布求助
文献互助 智能选刊 最新文献

Journal of Semiconductor Technology and Science最新文献

筛选
英文 中文
A Quadrature Error Corrector for Aperiodic, Quarter-rate Data Strobe Signals in HBM3 Interfaces HBM3接口中非周期、四分之一速率数据频闪信号的正交纠错器
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.177
Seon-Yeong Jo, Jinhyung Lee, Myeong-Jae Park, D. Jeong, Jaeha Kim
{"title":"A Quadrature Error Corrector for Aperiodic, Quarter-rate Data Strobe Signals in HBM3 Interfaces","authors":"Seon-Yeong Jo, Jinhyung Lee, Myeong-Jae Park, D. Jeong, Jaeha Kim","doi":"10.5573/jsts.2022.22.3.177","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.3.177","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"222 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73186767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Compact 6-bit Phase Shifter in 65 nm RF CMOS Technology for ISM Band 一种适用于ISM波段的65nm RF CMOS技术的紧凑型6位移相器
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.198
T.‐B. Ngo, Quang-Huy Do, Sang‐Woong Yoon
{"title":"A Compact 6-bit Phase Shifter in 65 nm RF CMOS Technology for ISM Band","authors":"T.‐B. Ngo, Quang-Huy Do, Sang‐Woong Yoon","doi":"10.5573/jsts.2022.22.3.198","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.3.198","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"PP 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84538225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High Resolution CMOS Frequency-to-digital Converter for a Fine Dust Sensor using a MEMS Resonator 用于微尘传感器的高分辨率CMOS频率-数字转换器，采用MEMS谐振器
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.168
Hyunwon Moon
{"title":"High Resolution CMOS Frequency-to-digital Converter for a Fine Dust Sensor using a MEMS Resonator","authors":"Hyunwon Moon","doi":"10.5573/jsts.2022.22.3.168","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.3.168","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"44 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80706177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoelectromechanical (NEM) Devices for Logic and Memory Applications 用于逻辑和存储应用的纳米机电(NEM)器件
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.188
H. Kwon, W. Choi
{"title":"Nanoelectromechanical (NEM) Devices for Logic and Memory Applications","authors":"H. Kwon, W. Choi","doi":"10.5573/jsts.2022.22.3.188","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.3.188","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"33 3 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78232735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extension of DRAM Retention Time at 77 Kelvin by Replacing Weak Rows with Large GIDL Current 用大GIDL电流代替弱行延长DRAM在77开尔文时的保持时间
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.133
Ho-Jun Kim, Won-Cheol Lee, Hong-June Park
{"title":"Extension of DRAM Retention Time at 77 Kelvin by Replacing Weak Rows with Large GIDL Current","authors":"Ho-Jun Kim, Won-Cheol Lee, Hong-June Park","doi":"10.5573/jsts.2022.22.3.133","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.3.133","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"19 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84909575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of Mechanical Stability during Electro-thermal Annealing in a 3D NAND Flash Memory String 三维NAND闪存串电热退火过程机械稳定性研究
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.139
Yu-Jin Kim, Jun-Young Park
{"title":"Investigation of Mechanical Stability during Electro-thermal Annealing in a 3D NAND Flash Memory String","authors":"Yu-Jin Kim, Jun-Young Park","doi":"10.5573/jsts.2022.22.3.139","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.3.139","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"32 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81333096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Implementation and Performance Analysis of Elliptic Curve Cryptography using an Efficient Multiplier 椭圆曲线密码的高效乘法器实现及性能分析
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-04-30 DOI: 10.5573/jsts.2022.22.2.53
R. J., E. N, N. Asokan
{"title":"Implementation and Performance Analysis of Elliptic Curve Cryptography using an Efficient Multiplier","authors":"R. J., E. N, N. Asokan","doi":"10.5573/jsts.2022.22.2.53","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.2.53","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"113 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75332192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Doping-less Tunnel Field-effect Transistor with a Gate Insulator Stack to Adjust Tunnel Barrier 用栅绝缘子堆调节隧道势垒的无掺杂隧道场效应晶体管
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-04-30 DOI: 10.5573/jsts.2022.22.2.61
Min-Gyu Jeon, Kang-rock Lee, Sangwan Kim, Garam Kim, J. Kim
{"title":"Doping-less Tunnel Field-effect Transistor with a Gate Insulator Stack to Adjust Tunnel Barrier","authors":"Min-Gyu Jeon, Kang-rock Lee, Sangwan Kim, Garam Kim, J. Kim","doi":"10.5573/jsts.2022.22.2.61","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.2.61","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"78 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73921240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Compact Macromodeling Method for Characterizing Large-signal DC and AC Performance of InP and GaAs HBTs 一种用于表征InP和GaAs HBTs大信号直流和交流性能的紧凑宏观建模方法
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-04-30 DOI: 10.5573/jsts.2022.22.2.84
Lin Cheng, Hongliang Lu, Yuming Zhang, Yimen Zhang
{"title":"A Compact Macromodeling Method for Characterizing Large-signal DC and AC Performance of InP and GaAs HBTs","authors":"Lin Cheng, Hongliang Lu, Yuming Zhang, Yimen Zhang","doi":"10.5573/jsts.2022.22.2.84","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.2.84","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"25 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79941239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric Si₃N₄/TiO₂堆叠双栅电介质的凹槽栅AlGaN/GaN mosfet的制备与性能
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-04-30 DOI: 10.5573/jsts.2022.22.2.105
H. An, J. Bae, Sin‐Hyung Lee, I. Kang, S. Min, Sang-Ho Lee, Jin Park, G. Kim, Y. Yoon, J. Seo, M. Cho, Jaewon Jang
{"title":"Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric","authors":"H. An, J. Bae, Sin‐Hyung Lee, I. Kang, S. Min, Sang-Ho Lee, Jin Park, G. Kim, Y. Yoon, J. Seo, M. Cho, Jaewon Jang","doi":"10.5573/jsts.2022.22.2.105","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.2.105","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"20 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90210862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信