用栅绝缘子堆调节隧道势垒的无掺杂隧道场效应晶体管

IF 0.5 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Semiconductor Technology and Science Pub Date : 2022-04-30 DOI:10.5573/jsts.2022.22.2.61

Min-Gyu Jeon, Kang-rock Lee, Sangwan Kim, Garam Kim, J. Kim

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Doping-less Tunnel Field-effect Transistor with a Gate Insulator Stack to Adjust Tunnel Barrier

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来源期刊

Journal of Semiconductor Technology and Science ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

0.90

自引率

0.00%

发文量

审稿时长

6-12 weeks

期刊介绍： Journal of Semiconductor Technology and Science is published to provide a forum for R&D people involved in every aspect of the integrated circuit technology, i.e., VLSI fabrication process technology, VLSI device technology, VLSI circuit design and other novel applications of this mass production technology. When IC was invented, these people worked together in one place. However, as the field of IC expanded, our individual knowledge became narrower, creating different branches in the technical society, which has made it more difficult to communicate as a whole. The fisherman, however, always knows that he can capture more fish at the border where warm and cold-water meet. Thus, we decided to go backwards gathering people involved in all VLSI technology in one place.