用大GIDL电流代替弱行延长DRAM在77开尔文时的保持时间

IF 0.5 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Semiconductor Technology and Science Pub Date : 2022-06-30 DOI:10.5573/jsts.2022.22.3.133

Ho-Jun Kim, Won-Cheol Lee, Hong-June Park

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Extension of DRAM Retention Time at 77 Kelvin by Replacing Weak Rows with Large GIDL Current

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来源期刊

Journal of Semiconductor Technology and Science ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

0.90

自引率

0.00%

发文量

审稿时长

6-12 weeks

期刊介绍： Journal of Semiconductor Technology and Science is published to provide a forum for R&D people involved in every aspect of the integrated circuit technology, i.e., VLSI fabrication process technology, VLSI device technology, VLSI circuit design and other novel applications of this mass production technology. When IC was invented, these people worked together in one place. However, as the field of IC expanded, our individual knowledge became narrower, creating different branches in the technical society, which has made it more difficult to communicate as a whole. The fisherman, however, always knows that he can capture more fish at the border where warm and cold-water meet. Thus, we decided to go backwards gathering people involved in all VLSI technology in one place.