2016 IEEE International Conference on Semiconductor Electronics (ICSE)最新文献_第8页

The impact of the bilayer TaN/Ta barrier at the copper seed and copper electroplating process in semiconductor fabrication 半导体制造中双层TaN/Ta势垒对铜种及铜电镀工艺的影响

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573649

Z. S. Hashim, Md Nizam Abd Rahman, M. Muhamad, A. Ahmad

引用次数: 0

Design and optimization of TiSix/HfO2 channel vertical double gate NMOS device TiSix/HfO2通道垂直双栅NMOS器件的设计与优化

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573593

K. Kaharudin, F. Salehuddin, A. Zain, M. Aziz, Z. Manap, Nurul Akmal Abd Salam, Wira Hidayat Bin Mohd Saad

{"title":"Design and optimization of TiSix/HfO2 channel vertical double gate NMOS device","authors":"K. Kaharudin, F. Salehuddin, A. Zain, M. Aziz, Z. Manap, Nurul Akmal Abd Salam, Wira Hidayat Bin Mohd Saad","doi":"10.1109/SMELEC.2016.7573593","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573593","url":null,"abstract":"This paper aims to propose a new structure of vertical double-gate NMOS device with titanium silicide (TiSix) and hafnium dioxide (HfO2) are utilized as gates and an insulator correspondingly. The simulation and characterization of the proposed device were carried out by using ATHENA and ATLAS modules of Silvaco TCAD tools. The threshold voltage (VTH) of the device was then optimized by tuning the correct level of halo implant dose, halo implant tilt, S/D implant energy and S/D implant tilt via the L9 orthogonal array (OA) of Taguchi method. The vertical TiSix/HfO2 channel vertical double-gate NMOS device has shown excellent device characteristics as the VTH, drive current (ION), leakage current (IOFF), ION/IOFF ratio and subthreshold swing (SS) were observed to be 0.2101 V, 2235.3 μA/μm, 1.363E-15 A/μm, 1.64E12 and 58.76 mV/dec respectively. These results are within the expected requirement of high performance (HP) multi gate (MG) technology as predicted by International Technology Roadmap Semiconductor (ITRS) 2013.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123276668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Investigation on electrical conductivity of strontium (Sr2+) influenced CaTi0.8Fe0.2O3 polycrystalline perovskite 锶(Sr2+)对CaTi0.8Fe0.2O3多晶钙钛矿电导率影响的研究

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573624

M. Panday, M. Vinoth, S. Surendhiran, V. Rajendran, P. Menon

{"title":"Investigation on electrical conductivity of strontium (Sr2+) influenced CaTi0.8Fe0.2O3 polycrystalline perovskite","authors":"M. Panday, M. Vinoth, S. Surendhiran, V. Rajendran, P. Menon","doi":"10.1109/SMELEC.2016.7573624","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573624","url":null,"abstract":"The electrical conductivity of the bulk and grain boundary of oxygen deficient (CaxSr1-x)(Ti0.8Fe0.2)O3-δ (x = 0.14, 0.16, 0.18, and 2.0) polycrystalline specimens were estimated by complex impedance spectroscopy analysis in the domestic frequency ranges from 0.01 Hz to 1 MHz at room temperature. The powder ceramic was synthesized using the sonochemical route. Powder X-ray diffraction of all the samples at 1000 °C shows cubic phase in symmetry. The impedance plots are composed of semicircles followed by warburg impedance for all the compounds. The shrinkage of grains and grain boundaries contribution are increased when Sr2+ ion concentration is increased. This is evident from the observed SEM image of grain morphology of the prepared powders. Frequency dependence of all the electrical parameters are carried out using complex impedance spectroscopy (CIS) analysis. The large dielectric constant is found in CSTFO14 sample in the magnitude order of ~×10^5. So, this kind of materials used for the applications of microwave and radio wave communications.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121940315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Dielectrophoretic force response for Lactobacillus Casei 干酪乳杆菌介电泳力响应

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573585

M. R. Buyong, F. Larki, Norazreen Abd Aziz, J. Yunas, A. A. Hamzah, B. Majlis

引用次数: 4

Wafer edge Shallow Trench Isolation side wall defect reduction on advanced CMOS 0.13µm technology at 0.18µm equipment platform 在0.18µm设备平台上采用先进的CMOS 0.13µm技术降低晶圆边缘浅沟隔离侧壁缺陷

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573646

Thung Beng Joo, K. Ibrahim, Nurulfajar Abd Manap, S. Fauziyah

引用次数: 0

Copper-graphene SPR-based biosensor for urea detection 基于铜-石墨烯sprr的尿素检测生物传感器

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573642

F. A. Said, P. Menon, Mohd Nuriman Nawi, A. M. Md Zain, A. Jalar, B. Majlis

引用次数: 22

Modeling and simulation of tunable band-pass filter based on metal-mumps 基于金属腮腺炎的可调谐带通滤波器的建模与仿真

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573576

Ladon Ahmed Bade, J. Dennis, M. Khir, W. P. Wen

引用次数: 1

Effect of geometrical shapes on 3D hydrodynamic focusing of a microfluidic flow cytometer 几何形状对微流控流式细胞仪三维流体动力聚焦的影响

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573604

Muhammad Syafiq Rahim, N. Selamat, J. Yunas, A. Ehsan

{"title":"Effect of geometrical shapes on 3D hydrodynamic focusing of a microfluidic flow cytometer","authors":"Muhammad Syafiq Rahim, N. Selamat, J. Yunas, A. Ehsan","doi":"10.1109/SMELEC.2016.7573604","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573604","url":null,"abstract":"This paper focuses on the effect of geometrical cross section between rectangular and circular shapes on the hydrodynamic focusing of a micro flow cytometer device. The effect of fluid flow ratio between the main and sheath channels on the focusing width is studied. This study has been performed using a COMSOL Multiphysics simulation tool. The results showed that focusing width decreases as the ratio between main channel and sheath channels are increased. The concentration at long-range is studied and indicated that circular shape can sustain a higher concentration at the centre along the channel compared with rectangular shape. The velocity at the cross-section of the channel-junction shows that circular shape produces higher velocity at the centre of the channel compare to that of the rectangular shape. The effect of flow ratio and geometrical shape are significantly vital for microfluidic system which utilizes hydrodynamic focusing for biological and chemical analysis. From the result, micro flow cytometer studied able to use for human body cells such as glucose, virus, red blood cells and white blood cells which have a range size of 2-120 microns.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124999695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Multimode multiband power amplifier with tapped transformer for efficiency enhancement in low power mode 带抽头变压器的多模多频带功率放大器，用于在低功率模式下提高效率

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573643

Veeraiyah Thangasamy, V. Thiruchelvam, M. Hamidon, S. Hashim, M. Bukhori, Z. Yusoff, N. Kamsani

引用次数: 1

A ZnO-rGO composite thin film discrete memristor ZnO-rGO复合薄膜分立记忆电阻器

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573608

G. M. Khanal, G. Cardarilli, A. Chakraborty, Simone Acciarito, M. Y. Mulla, L. Di Nunzio, R. Fazzolari, M. Re

引用次数: 15