Journal of Physics and Chemistry of Solids最新文献

{"title":"Electric property of solid hydrogen and magnetoresistivity of tin superhydride","authors":"","doi":"10.1016/j.jpcs.2024.112322","DOIUrl":"10.1016/j.jpcs.2024.112322","url":null,"abstract":"<div><p>We derive the physical mechanisms that deny solid hydrogen to be a metal for any pressure. Fermi- nor strange-metallic phase cannot be achieved in solid hydrogen with applied pressure. The resistance and Raman data indicate insufficient carrier density and large-angle electron-ion scattering induced resistivity in molecular or atomic solid hydrogen. In the absence of Fermi-metallic or strange-metallic phase, solid hydrogen cannot superconduct for any temperature and pressure. Doping hydrogen to form superhydride can lead to low resistivity metallic phase. We show that the resistance and magnetoresistance data for Sn-H superhydride does indicate superconductivity (at high pressures) due to the observed strange normal-state metallic phase with large carrier density. We exploit the Ionization Energy Theory and the low temperature Fermi liquid transport theory to derive the magnetoresistance formula and the magnetic-field induced scattering rate mechanisms to justify the strange metallic phase that obeys Arulsamy fermions and superconductivity in Sn-H.</p></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142240383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A first principles based exploration of Rb2XHgCl6 (X= Al, Y) halide double perovskites for their applications in futuristic efficient technologies","authors":"","doi":"10.1016/j.jpcs.2024.112332","DOIUrl":"10.1016/j.jpcs.2024.112332","url":null,"abstract":"<div><p>Herein, the first principles calculations are performed to explore the physical features of Rb₂XHgCl₆ (X = Al, Y) to unravel their potential candidacy for optoelectronic and thermoelectric applications. The geometry optimization reveals that Rb₂XHgCl₆ (X = Al, Y) are stable in cubic structure with ferromagnetic nature. Analysis of tolerance factor and formation energies uncovered the thermodynamically stability. Moreover, the semiconductor nature of considered compounds is confirmed by spin dependent electronic characteristics. Rb₂XHgCl₆ (X = Al, Y) revealed maximum absorption of ultraviolet light which prove that corresponding materials are appropriate for optoelectronic devices. Using BoltzTraP package, the thermoelectric (TE) characteristics are computed within range of 100–800 K. Results suggest that the resultant material are appropriate candidates for spintronic, optoelectronic and TE applications and more stimulate experimentalist to discover these materials for their usage in practical extent.</p></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142230041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Osmotic energy harvesting using acrylic acid hydrogel PET membrane","authors":"","doi":"10.1016/j.jpcs.2024.112329","DOIUrl":"10.1016/j.jpcs.2024.112329","url":null,"abstract":"<div><p>In this study, we investigated the osmotic energy harvesting using a cation-selective membrane. The cation-selective membrane was synthesized by the incorporation of acrylic acid hydrogel in a porous support membrane. FTIR analysis and SEM images confirmed the presence of the acrylic acid hydrogel rods inside the porous support material. The exposure of the acrylic acid hydrogel PET (AP) membrane to a concentration gradient culminated in the generation of electric power. The AP membrane was evaluated in regard to the following parameters: <em>E</em>_Diff, <em>I</em>_o, <em>P</em>_max and <em>t</em>₊. The maximum power obtained with the membrane was 1.10 μW at the 40-fold concentration gradient (test area∽ 100 mm²). Increasing the concentration gradient increased the power output. However, a decrease in power output was observed after a certain value of the concentration gradient. An enhancement in power output was noted as the fraction of acrylic acid within the membrane was augmented. Additionally, the cation transference number also increased owing to a high charge density and a reduction in the mesh size. The AP membrane was also investigated in acidic and basic media. The time-dependent study revealed the superior chemical stability of the AP membrane.</p></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0022369724004645/pdfft?md5=57861e03ca62621a3ab2725ae90591dc&pid=1-s2.0-S0022369724004645-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142230040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pseudocapacitive Na ion storage in binder-less, carbon additive-free Nb2O5-x electrode synthesised via solvothermal-assisted electro-coating with enhanced areal capacitance and lowered impedance parameters","authors":"","doi":"10.1016/j.jpcs.2024.112336","DOIUrl":"10.1016/j.jpcs.2024.112336","url":null,"abstract":"<div><p>Negatrodes with wide negative operating voltage, high electrochemical storage capacity, and intrinsic metal ion intercalation abilities are vital to the continuous development of storage devices with simultaneous energy and power density improvement. Herein, we report binder-less coating of non-stoichiometric vacancy-implanted Nb₂O_5-x as carbon additive-free negatrode on FTO substrate for asymmetric supercapacitor and sodium ion capacitor applications. The negatrode was fabricated through vacuum-less and low-temperature solvothermal-assisted electro-coating technique and yielded several orders of enhancement in its areal capacitance and retained ca. 90 % of its capacity after 5000 cycles of charge-discharge in aqueous Na⁺ electrolyte. The solvothermal treated electro-coated electrode (STT_Nb₂O_5-x) achieved an areal capacitance of 22.58 mF/cm^2, which was far higher than those of hydrothermal-treated electro-coated HTT_Nb₂O₅ and Nb₂O₅ electrodes. The solvothermal treatment simultaneously enhanced the electro-coated samples' impedance properties and mass load through oxygen vacancy implantation and re-crystallization of the electro-coated Nb₂O₅ layer, respectively. This study presented a facile and energy-efficient technique of direct coating of defect-enhanced pseudocapacitive nanomaterials for the fabrication of electrochemical storage devices.</p></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142240547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lattice constant, bandgap energy, absorption coefficient and dielectric function of the antimony-rich InBixSb1-x alloy using first-principles calculations","authors":"","doi":"10.1016/j.jpcs.2024.112307","DOIUrl":"10.1016/j.jpcs.2024.112307","url":null,"abstract":"<div><p>So far, little is known about the electronic and optical properties of InBi_xSb_1-x. In this work, the first-principles calculations are performed to research the lattice constant, the bandgap energy, the absorption coefficient and the dielectric function of the antimony-rich InBi_xSb_1-x. The results show that the bowing coefficient for the lattice constant is merely −0.012 Å. According to the band structures, it is found that the Sb-rich InBi_xSb_1-x possesses a direct bandgap at G point. Its bandgap reduction is due to the ascending of the valence band maximum (VBM) and the descending of the conduction band minimum (CBM). For the sake of providing a good description for the bandgap energy in the Sb-rich range, the modified valence band anticrossing (MVBAC) model plus a linear equation is utilized. The result shows that the predicted positive to negative bandgap transition occurs at x = 0.13. Besides, the valence band offset between InSb and InBi is identified to be 0.27eV. For the optical properties, it is found that the Bi component is effective in raising the static dielectric constant of InBi_xSb_1-x. However, it has a minor effect on the transition ability of the electrons. In the Sb-rich component range, the critical point energies <span><math><mrow><msub><mi>E</mi><mn>0</mn></msub><mo>+</mo><msub><mo>Δ</mo><mn>0</mn></msub></mrow></math></span> <span><math><mrow><msub><mi>E</mi><mn>1</mn></msub></mrow></math></span>, <span><math><mrow><msub><mi>E</mi><mn>1</mn></msub><mo>+</mo><msub><mo>Δ</mo><mn>1</mn></msub></mrow></math></span> <span><math><mrow><msub><mi>E</mi><mn>2</mn></msub></mrow></math></span> and <span><math><mrow><msubsup><mi>E</mi><mn>1</mn><mo>′</mo></msubsup></mrow></math></span> are found to shift toward the low energy direction. The result of the absorption spectra supports this opinion as increasing Bi component leads to a redshift of the absorption spectra. The adjustable bandgap energy and the optical properties of InBi_xSb_1-x demonstrate that it is a strong candidate for fabricating the photodetectors in the 8–12 μm spectral region.</p></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142230044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the theoretical potential of tungsten oxide (WOx) as a universal electron transport layer (ETL) for various perovskite solar cells through interfacial energy band alignment modulation","authors":"","doi":"10.1016/j.jpcs.2024.112324","DOIUrl":"10.1016/j.jpcs.2024.112324","url":null,"abstract":"<div><p>Perovskite solar cells (PSCs) play a pivotal role in advancing renewable energy to achieve United Nation's Sustainable Development Goal 7 (SDG 7), which aims to ensure universal access to affordable, sustainable, reliable and modern energy services. Aiming to enhance the performance of PSCs by replacing the typically used electron transport layers (ETLs: TiO₂, SnO₂, ZnO etc.), we theoretically investigated the viability of tungsten oxide (WO_X) as a promising ETL for PSCs. Moreover, the effect of altering the energy levels of WO_X on cell performance has also been analyzed through simulation. Initially, 12 (twelve) PSC structures having the combination of different perovskite (PSK: CsPbBr₃, CsPbI₃, FAPbBr₃, FAPbI₃) absorber layers with different organic hole transport layers (HTLs: Spiro-OMeTAD, P3HT, PEDOT:PSS) and a fixed ETL of WO_X were optimized numerically for comparing their performance. As CsPbBr₃-based PSCs showed the best performance, further simulations were performed by varying some WO_X/CsPbBr₃ interface properties such as interface defect density, conduction band offset (CBO) between WO_X and CsPbBr₃, energy bandgap (E_g) of WO_X etc. Finally, the best-performed PSCs were found for the E_g = 3.5 eV of WO_X and the CBO of - 0.5 eV confirming the conduction band minimum (CBM) of WO_X is lower than that of CsPbBr₃ by 0.5 eV. A properly chosen WO_X layer enhanced the efficiency of CsPbBr₃-based PSCs up to 14.65 %, 14.52 % and 16.09 %, aproaching the Shockley-Queisser (S-Q) limit (16.37% for CsPbBr₃-based solar cell) from the initial values of 11.39 %, 11.27 %, and 12.49 %, respectively. This study ensures WO_X is a promising ETL for which a proper PSC structure having a suitable PSK and an HTL can improve cell performance. Moreover, the importance of modifying energy levels of ETL material in enhancing the performance of PSCs is explored. As a result, this study opens a path for the researchers to develop WO_X having suitable CBM and E_g, so that it can be well-suited with a properly matched PSK material resulting in enhanced cell performance.</p></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142240382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis of porous Mg2MnO4 spinel microspheres and enhanced lithium storage properties","authors":"","doi":"10.1016/j.jpcs.2024.112328","DOIUrl":"10.1016/j.jpcs.2024.112328","url":null,"abstract":"<div><p>Porous Mg₂MnO₄ spinel microspheres were synthesized by a facile solvothermal method. Various techniques such as X-ray powder diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, were used to characterize the phase composition, morphology and electronic structure of materials. The results show that Mg₂MnO₄ spinel material was obtained at the temperature of 600–800 °C and has a microsphere structure. The microspheres were assembled by nanoparticles, and the particle size increases with the increase of annealing temperature. Analyses of XPS spectra reveal that Mn exists in multiple valence states (+2, +3, +4) in Mg₂MnO₄ materials, and all the materials are mixed spinel with Mg²⁺ and Mn^2+/3+/4+ ions occupy both tetrahedral and octahedral sites of spinel structure, and the degree of inversion decreases with increasing annealing temperature. Mg₂MnO₄ microspheres exhibit excellent lithium storage performance, the first discharge specific capacity of M2MO-8 is 835.3 mAh g⁻¹ under a voltage window of 0–3 V and with a current density of 100 mA g⁻¹, and after 100 cycles the discharge capacity of the material is as high as 406.5 mAh g⁻¹. In addition, this material shows high cyclic reversibility. The enhanced lithium storage properties of the material can be attributed to its porous structure, which promote the transport of lithium ions and reduce the damage to the structure caused by the volume change during the charge and discharge process.</p></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142173291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical design and performance evaluation of a lead-free fully inorganic CIGS solar cell with CuSbS2 as HTL","authors":"","doi":"10.1016/j.jpcs.2024.112331","DOIUrl":"10.1016/j.jpcs.2024.112331","url":null,"abstract":"<div><p>The widespread use of lead (Pb)-based materials in solar cells poses serious environmental and health risks, particularly through lead contamination. These hazards make the development of Pb-free alternatives a critical priority for safer and more sustainable photovoltaic technologies. This study addresses this pressing need by exploring innovative, non-toxic materials for high-efficiency solar cells. In response, this study introduces a novel, fully inorganic solar cell structure, FTO/ZnO/CIGS/CuSbS₂/Au, which leverages copper indium gallium (di) selenide (CIGS) as the absorber layer and copper antimony sulfide (CuSbS₂) as the hole transport layer (HTL). Our approach is distinguished by the strategic integration of zinc oxide (ZnO) as the electron transport layer (ETL), which, in conjunction with CuSbS₂, enhances charge transport efficiency and overall device performance. This research innovates by conducting a comprehensive numerical analysis to fine-tune critical parameters such as absorber layer thickness, doping levels, defect densities, and radiative recombination rates. By optimizing these parameters, we significantly improve the photoconversion efficiency of the solar cell. Additionally, we systematically investigate the influence of interface defects, metal back contacts, and temperature variations on device performance, providing new insights into the stability and efficiency of inorganic solar cells. A key mechanism explored in this study is the role of series and shunt resistances in determining the electrical behavior of the solar cell, analyzed through capacitance-voltage (C–V) and capacitance-frequency (C–F) measurements. These analyses reveal the intricate balance between charge carrier dynamics and external resistive factors, further elucidating the operational mechanisms within the cell. Our fully inorganic FTO/ZnO/CIGS/CuSbS₂/Au solar cell achieves a remarkable power conversion efficiency (PCE) of 32.25 % at room temperature, with a short-circuit current density (J_SC) of 34.77 mA/cm², an open-circuit voltage (V_OC) of 1.10 V, and a fill factor (FF) of 84.33 %. By comparing these results with both experimental and theoretical benchmarks in the field of CIGS solar cells, we demonstrate the competitive edge and profound significance of our lead-free design.</p></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0022369724004669/pdfft?md5=70af901b6a093d7cbedd05735cec77b4&pid=1-s2.0-S0022369724004669-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142163654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Boosting the performance of SnSe-based solar cells through electron and hole transport layers: A qualitative study and perspectives","authors":"","doi":"10.1016/j.jpcs.2024.112333","DOIUrl":"10.1016/j.jpcs.2024.112333","url":null,"abstract":"<div><p>The SnSe compound is garnering considerable interest as a potential solar absorber for developing highly efficient thin-film solar cells. Using one experimental report as a foundation and employing the one-dimensional solar cell capacitance simulator (SCAPS-1D), we examined the elements that impact the efficiency of solar cells utilizing tin selenide as the base material. The base structure consists of Anode/SnSe/CdS/i-ZnO/ZnO:Al/Cathode. A 0.5 μm thick SnSe film demonstrated an efficiency of 2.51 %. In the initial phase, we optimized the device efficiency to 18.65 % through parameter adjustments, utilizing toxic CdS as a buffer layer. In the subsequent phase, earth-abundant and non-toxic Zn_1-<em>x</em>Mg_<em>x</em>O, SnO₂, and TiO₂ alternatives were explored as electron transport materials (ETL) to replace CdS. Zn_1-<em>x</em>Mg_<em>x</em>O (with <em>x</em> = 0.1875) exhibited the highest efficiency at 19.03 %. In the final phase, various hole transport materials (HTL) were studied to enhance the SnSe-based solar cell's performance. Among the HTL materials investigated, NiO yielded the best efficiency of 20.59 % when using Zn_1-<em>x</em>Mg_<em>x</em>O (with <em>x</em> = 0.1875) as a buffer layer.</p></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142163656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel crystalline Bi/amorphous Bi2O3 hybrid nanoparticles embedded in N-doped carbon for high-performance lithium-ion battery anodes","authors":"","doi":"10.1016/j.jpcs.2024.112330","DOIUrl":"10.1016/j.jpcs.2024.112330","url":null,"abstract":"<div><p>In this work, novel crystalline Bi/amorphous Bi₂O₃ hybrid nanoparticles (Bi/a-Bi₂O₃) are embedded into an N-doped carbon (Bi/a-Bi₂O₃@C) by a simple ball-milling and subsequent carbonization process to stabilize the structure and enhance the conductivity of the Bi/a-Bi₂O₃ anode during lithium storage. The results confirm that in Bi/a-Bi₂O₃@C the relatively dispersed quasi-spherical Bi/a-Bi₂O₃ hybrid nanoparticles are tightly embedded within the N-doped carbon with a wrinkled surface; meanwhile, the Bi–C and Bi–<em>O</em>–C bonds are formed between Bi/a-Bi₂O₃ and carbon, further reinforcing the combination between Bi/a-Bi₂O₃ and carbon and enhancing the conductivity of Bi/a-Bi₂O₃@C. Moreover, the amorphous a-Bi₂O₃ with an open architecture can offer more isotropic ion transfer ways to facilitate the transport of Li⁺. These distinctive structural features endow Bi/a-Bi₂O₃@C with fast electrochemical reaction kinetics, high capacitance ratio, superior structural stability and a LiF-rich SEI layer during cycle. As a result, the Bi/a-Bi₂O₃@C reveals outstanding electrochemical performance including high capacity, good rate performance and long lifespan, with 406.7 and 154.2 mAh g⁻¹ after 460 and 1000 cycles at 200 and 2000 mA g⁻¹ (about 13 C), respectively. This work provides a new insight into the improvement of lithium storage performances of the Bi-based anodes.</p></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0022369724004657/pdfft?md5=301383bf9f857c51d453f3e69d3f4dea&pid=1-s2.0-S0022369724004657-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142163653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}