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Sub-10 nm energy-efficient tunnel FETs based on MoSi2N4 monolayer 基于MoSi2N4单层的亚10nm节能隧道场效应管
IF 4.3 3区 材料科学
Journal of Physics and Chemistry of Solids Pub Date : 2025-05-12 DOI: 10.1016/j.jpcs.2025.112796
Hamidreza Ghanbari Khorram , Samad Sheikhaei , Shoeib Babaee Touski , Alireza Kokabi
{"title":"Sub-10 nm energy-efficient tunnel FETs based on MoSi2N4 monolayer","authors":"Hamidreza Ghanbari Khorram ,&nbsp;Samad Sheikhaei ,&nbsp;Shoeib Babaee Touski ,&nbsp;Alireza Kokabi","doi":"10.1016/j.jpcs.2025.112796","DOIUrl":"10.1016/j.jpcs.2025.112796","url":null,"abstract":"<div><div>The MoSi<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>N<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span> monolayer is investigated as a channel material for sub-10 nm Tunnel Field-Effect Transistors (TFETs) to overcome the limitations of CMOS technology in power consumption and scaling. Following the Non-Equilibrium Green’s Function (NEGF) formalism, the study investigates key performance parameters that comprise ON-state current (<span><math><msub><mrow><mi>I</mi></mrow><mrow><mtext>ON</mtext></mrow></msub></math></span>), OFF-state current (<span><math><msub><mrow><mi>I</mi></mrow><mrow><mtext>OFF</mtext></mrow></msub></math></span>), ON/OFF current ratio, and sub-threshold swing (<span><math><mrow><mi>S</mi><mi>S</mi></mrow></math></span>). Tensile strain (+2%) enhances <span><math><msub><mrow><mi>I</mi></mrow><mrow><mtext>ON</mtext></mrow></msub></math></span>, while compressive strain (-2%) reduces <span><math><msub><mrow><mi>I</mi></mrow><mrow><mtext>OFF</mtext></mrow></msub></math></span> significantly, leading to a very high ON/OFF ratio. The <span><math><mrow><mi>S</mi><mi>S</mi></mrow></math></span> is measured around 14 mV/dec below the Boltzmann limit of conventional FETs. The <span><math><mi>n</mi></math></span>-TFET and <span><math><mi>p</mi></math></span>-TFET structures are explored through I–V characteristics, and an inverter gate is examined, demonstrating the potential of the material for logic applications. The obtained low OFF-current and <span><math><mrow><mi>S</mi><mi>S</mi></mrow></math></span> values for sub-10 nm channel length suggest that MoSi<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>N<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>-based TFET is a promising option for the next-generation nanoelectronics with high performance, low static power consumption, and energy efficiency.</div></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":"206 ","pages":"Article 112796"},"PeriodicalIF":4.3,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143942483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Significant enhancement of the negative electrocaloric effect in Mn-doped PbHfO3 films mn掺杂phbhfo3薄膜的负热效应显著增强
IF 4.3 3区 材料科学
Journal of Physics and Chemistry of Solids Pub Date : 2025-05-12 DOI: 10.1016/j.jpcs.2025.112857
Yongqing Zhao , Wenhua Li , Xingui Tang , Zhifei Jian , Yongxi Liang , Renkai Zhao , Kaijie Chen , Yanping Jiang , Xiaobin Guo , Kai Yan
{"title":"Significant enhancement of the negative electrocaloric effect in Mn-doped PbHfO3 films","authors":"Yongqing Zhao ,&nbsp;Wenhua Li ,&nbsp;Xingui Tang ,&nbsp;Zhifei Jian ,&nbsp;Yongxi Liang ,&nbsp;Renkai Zhao ,&nbsp;Kaijie Chen ,&nbsp;Yanping Jiang ,&nbsp;Xiaobin Guo ,&nbsp;Kai Yan","doi":"10.1016/j.jpcs.2025.112857","DOIUrl":"10.1016/j.jpcs.2025.112857","url":null,"abstract":"<div><div>With the rapid development of artificial intelligence, the demand for refrigeration in large-scale integrated circuits is steadily increasing. The electrocaloric effect (ECE), recognized as a core mechanism of emerging solid-state refrigeration technologies, has garnered significant attention. In this study, Pb<sub>1-<em>x</em></sub>Mn<sub><em>x</em></sub>HfO<sub>3</sub> (PMH-100<em>x</em>) films with a high negative electrocaloric effect (NECE) were fabricated. Further research reveals that the enhancement of the NECE in PMH-100<em>x</em> films results from the incorporation of Mn<sup>2+</sup> into PbHfO<sub>3</sub> (PHO). Mn<sup>2+</sup> doping obviously improves the antiferroelectric-ferroelectric (AFE-FE) phase transition behavior, leading to the enhanced NECE performance. Experimental findings indicate that the PHO film with a Mn<sup>2+</sup> doping concentration of 0.5 % exhibits the highest NECE performance. In PMH-0.5 film, it achieves ΔS = 15.1 J K<sup>−1</sup> kg<sup>−1</sup> and ΔT = −18.8 K at 60 °C under 533 kV/cm, representing a 33.3 % improvement compared to the pure PMH-0.0 sample. Furthermore, it was demonstrated that varying Mn<sup>2+</sup> doping concentrations induces a transition from NECE to positive electrocaloric effects (PECE) in the samples. For instance, high PECE were observed in PMH-1.0 and PMH-2.0 films, with corresponding ΔT values of 9.4 K and 15.5 K, respectively. This transformation has considerable practical implications for refrigeration technologies that combine NECE and PECE. The present research provides a promising candidate material for solid-state refrigeration in integrated circuits.</div></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":"206 ","pages":"Article 112857"},"PeriodicalIF":4.3,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143948071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of catalyst loading on nickel foam substrates for monoclinic NaBiO2 towards OER applications 面向OER应用的单斜NaBiO2泡沫镍基催化剂负载优化
IF 4.3 3区 材料科学
Journal of Physics and Chemistry of Solids Pub Date : 2025-05-11 DOI: 10.1016/j.jpcs.2025.112847
Mishkat Majeed , Abhinav Kumar , Sarah A. Alsalhi , Jayanti Makasana , Rekha M. M , G. Senthil Kumar , Mohammed A. Al-Anber , Sankar Narayan Das , Rahul Raj Chaudhary , Ankit D. Oza
{"title":"Optimization of catalyst loading on nickel foam substrates for monoclinic NaBiO2 towards OER applications","authors":"Mishkat Majeed ,&nbsp;Abhinav Kumar ,&nbsp;Sarah A. Alsalhi ,&nbsp;Jayanti Makasana ,&nbsp;Rekha M. M ,&nbsp;G. Senthil Kumar ,&nbsp;Mohammed A. Al-Anber ,&nbsp;Sankar Narayan Das ,&nbsp;Rahul Raj Chaudhary ,&nbsp;Ankit D. Oza","doi":"10.1016/j.jpcs.2025.112847","DOIUrl":"10.1016/j.jpcs.2025.112847","url":null,"abstract":"<div><div>Recent decades have seen significant advancements in investigating binary metal oxides, especially regarding their use in electrocatalysis. Nonetheless, investigations into delafossite-type oxides (DOs), particularly Bi-based variations like NaBiO<sub>2,</sub> are constrained by their complex nature, structural variety and formation issues. This work presents an innovative synthesis approach to producing monoclinic-phase NaBiO<sub>2</sub> by a straightforward and scalable co-precipitation technique. It emphasizes its applications as a remarkably stable and active electrocatalyst for the oxygen evolution reaction (OER). The key advancement is in the specific modification of catalyst loading to alter the material's surface characteristics, exhibiting electrochemically advantageous crystal characteristics. The optimized NaBiO<sub>2</sub> sample, produced under regulated loading circumstances, shows a distinctive flower-like petal shape, a large surface area and improved durability. Electrochemical investigation demonstrates exceptional OER activity, characterized by a low overpotential (η) of 243 mV, a minimal Tafel slope (35 mV/dec) and sustained stability exceeding 50 h at a 10 mA/cm<sup>2</sup> current density (C<sub>d</sub>). The sample has an extraordinarily high electrochemically active surface area (ECSA) of 2022.25 cm<sup>2</sup> and an impressively minimal charge transfer resistance (R<sub>ct</sub>) of 0.26 Ω. This study establishes a first comprehensive interaction between NaBiO<sub>2</sub> catalyst loading and OER efficiency, presenting a novel approach to optimizing delafossite-type oxides for energy-related applications. The results enhance the fundamental comprehension of Bi-based delafossite electrocatalysts and facilitate their widespread use in green energy conversion strategies.</div></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":"206 ","pages":"Article 112847"},"PeriodicalIF":4.3,"publicationDate":"2025-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143942482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of refractive index, thickness and extinction coefficient on thin film reflectance 折射率、厚度和消光系数对薄膜反射率的影响
IF 4.3 3区 材料科学
Journal of Physics and Chemistry of Solids Pub Date : 2025-05-11 DOI: 10.1016/j.jpcs.2025.112849
Abdelaziz Tchenka, Lahoucine Amiri, Mohammed Bousseta, Noureddine Lebrini, Mouhcine Ourbaa, Elmaati Ech-Chamikh
{"title":"Influence of refractive index, thickness and extinction coefficient on thin film reflectance","authors":"Abdelaziz Tchenka,&nbsp;Lahoucine Amiri,&nbsp;Mohammed Bousseta,&nbsp;Noureddine Lebrini,&nbsp;Mouhcine Ourbaa,&nbsp;Elmaati Ech-Chamikh","doi":"10.1016/j.jpcs.2025.112849","DOIUrl":"10.1016/j.jpcs.2025.112849","url":null,"abstract":"<div><div>This study uses a theoretical and analytical approach based on comparative parameter variation to investigate the influence of thickness, refractive index, and extinction coefficient on the optical properties of thin films, with a particular focus on light reflection. Variations in thickness alter the number, position, and average reflectance of interference fringes. Changes in the refractive index affect fringe visibility, minimum reflectance, and fringe spacing. Meanwhile, the extinction coefficient primarily impacts the average reflectance while preserving the overall shape of the spectrum. To isolate and assess the specific effect of each parameter, a comparative method is employed in which one parameter is varied while the others are held constant. This approach enables a detailed investigation of the individual contributions of each variable. The objective is to understand and interpret the observed variations in the optical spectra, to identify the physical mechanisms responsible for these changes, and to determine which parameter has the most significant effect on reflection. The findings provide valuable insights into optimizing the optical behavior of thin films and offer a foundation for future advancements in optical material design for devices, sensors, and anti-reflective coatings.</div></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":"206 ","pages":"Article 112849"},"PeriodicalIF":4.3,"publicationDate":"2025-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144088728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimizing anti-reflection and surface passivation for n-type back-contact back-junction silicon solar cells using SiNx/SiON stack layers: Insights from quokka simulation 利用SiNx/SiON堆叠层优化n型背接触背结硅太阳能电池的抗反射和表面钝化:来自短尾矮袋鼠模拟的见解
IF 4.3 3区 材料科学
Journal of Physics and Chemistry of Solids Pub Date : 2025-05-09 DOI: 10.1016/j.jpcs.2025.112841
Vinh-Ai Dao , Phuong T.K. Nguyen , Minkyu Ju , Hong-Thuy Do , Van-Thanh Nguyen-Le , Chi-Hieu Nguyen , Khanh-Chi Tran-Thi , Y B.N. Tran , Huong Thi Thanh Nguyen , Thanh Thuy Trinh , Junsin Yi
{"title":"Optimizing anti-reflection and surface passivation for n-type back-contact back-junction silicon solar cells using SiNx/SiON stack layers: Insights from quokka simulation","authors":"Vinh-Ai Dao ,&nbsp;Phuong T.K. Nguyen ,&nbsp;Minkyu Ju ,&nbsp;Hong-Thuy Do ,&nbsp;Van-Thanh Nguyen-Le ,&nbsp;Chi-Hieu Nguyen ,&nbsp;Khanh-Chi Tran-Thi ,&nbsp;Y B.N. Tran ,&nbsp;Huong Thi Thanh Nguyen ,&nbsp;Thanh Thuy Trinh ,&nbsp;Junsin Yi","doi":"10.1016/j.jpcs.2025.112841","DOIUrl":"10.1016/j.jpcs.2025.112841","url":null,"abstract":"<div><div>The back-contact back-junction (BC BJ) cell configuration's unique design, with the emitter and rear contact on the back, allows for easier and more effective carrier collection from the rear. This study utilized the non-vacuum break method to create SiN<sub>x</sub>/SiON dual layers; these layers were then used as both an anti-reflection and passivation layer to enhance the performance of the BC BJ cells. Both experimental and simulation approaches were employed to optimize these performances. By integrating the advantageous characteristics of the SiN-rich SiN<sub>x</sub> layer and the SiON layer, the stacked SiN<sub>x</sub>/SiON layer demonstrates remarkably low surface recombination with an average surface reflectance of 3.95 % and 5 cm/s, respectively. Through simulation, introducing the SiN<sub>x</sub>/SiON stack on the front side of the BJ BC results in an increase of up to 3.4 mA/cm2 in short-circuit current density and 26 mV in open-circuit voltage, as compared to using a single SiN<sub>x</sub> layer. The incorporation of the SiN<sub>x</sub>/SiON stack resulted in an approximately 14.59 % efficiency enhancement for BJ BC solar cells. This success motivates further research into non-vacuum-based optimization techniques for BJ BC cells.</div></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":"206 ","pages":"Article 112841"},"PeriodicalIF":4.3,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143948072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon, carbon, boron nitride nanocages and their halogen doped derivatives as anodes in metal-ion battery 硅、碳、氮化硼纳米笼及其卤素掺杂衍生物作为金属离子电池阳极
IF 4.3 3区 材料科学
Journal of Physics and Chemistry of Solids Pub Date : 2025-05-09 DOI: 10.1016/j.jpcs.2025.112844
Meina Zhang , Lixin Liu , Chunzhe Li
{"title":"Silicon, carbon, boron nitride nanocages and their halogen doped derivatives as anodes in metal-ion battery","authors":"Meina Zhang ,&nbsp;Lixin Liu ,&nbsp;Chunzhe Li","doi":"10.1016/j.jpcs.2025.112844","DOIUrl":"10.1016/j.jpcs.2025.112844","url":null,"abstract":"<div><div>The capacities of C<sub>80</sub>, F–C<sub>80</sub>, Br–C<sub>80</sub>, Ge<sub>80</sub>, F–Ge<sub>80</sub>, Br–Ge<sub>80</sub>, Si<sub>60</sub>, F–Si<sub>60</sub>, Cl–Si<sub>60</sub>, C<sub>60</sub>, F–C<sub>60</sub>, Cl–C<sub>60</sub>, B<sub>30</sub>N<sub>30</sub>, F–B<sub>30</sub>N<sub>30</sub> and Cl–B<sub>30</sub>N<sub>30</sub> nanocages in batteries have been examined to propose the acceptable anode materials. The E<sub>cohesive</sub> and E<sub>adsorption</sub> of C<sub>80</sub>, F–C<sub>80</sub>, Br–C<sub>80</sub>, Ge<sub>80</sub>, F–Ge<sub>80</sub>, Br–Ge<sub>80</sub>, Si<sub>60</sub>, F–Si<sub>60</sub>, Cl–Si<sub>60</sub>, C<sub>60</sub>, F–C<sub>60</sub>, Cl–C<sub>60</sub>, B<sub>30</sub>N<sub>30</sub>, F–B<sub>30</sub>N<sub>30</sub> and Cl–B<sub>30</sub>N<sub>30</sub> nanocages have been calculated. The E<sub>adsorption</sub> of F, Br and Cl on C<sub>80</sub>, Ge<sub>80</sub>, Si<sub>60</sub>, C<sub>60</sub>, B<sub>30</sub>N<sub>30</sub> are −9.02, −9.32, −9.70, −9.90, −8.03, −8.24, −7.73, −7.99, −8.32 and −8.49 eV, respectively. Results shown that the F, Cl and Br doped on nanocages can be increased the E<sub>cohesive</sub> and stability of nanocages. The Ge<sub>80</sub>, Si<sub>60</sub> and B<sub>30</sub>N<sub>30</sub> nanocages in batteries have higher capacities than C<sub>60</sub> nanocage. The V<sub>cell</sub> of C<sub>80</sub>, F–C<sub>80</sub>, Br–C<sub>80</sub>, Ge<sub>80</sub>, F–Ge<sub>80</sub>, Br–Ge<sub>80</sub>, Si<sub>60</sub>, F–Si<sub>60</sub>, Cl–Si<sub>60</sub>, C<sub>60</sub>, F–C<sub>60</sub>, Cl–C<sub>60</sub>, B<sub>30</sub>N<sub>30</sub>, F–B<sub>30</sub>N<sub>30</sub> and Cl–B<sub>30</sub>N<sub>30</sub> nanocages in Li- and K-ion batteries are 2.55, 2.59, 2.61, 2.71, 2.75, 2.78, 2.25, 2.29, 2.31, 2.18, 2.22, 2.24, 2.32, 2.36 and 2.38 V, respectively. The Mg-ion batteries have higher capacities than K- and Li-ion batteries. The F, Cl and Br doped on nanocages have the highest V<sub>cell</sub> and C<sub>theory</sub> values. The F–Si<sub>60</sub>, Cl–Si<sub>60</sub>, F–B<sub>30</sub>N<sub>30</sub> and Cl–B<sub>30</sub>N<sub>30</sub> are proposed as effective materials to utilize in Li-, Mg- and K-ion batteries.</div></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":"206 ","pages":"Article 112844"},"PeriodicalIF":4.3,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144071460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New Organic–Inorganic chloride (2-amino-4-methylpyridinium Hexachlorostannate): Crystal structure, BFDH morphology, and electrical conduction mechanism 新型有机-无机氯化物(2-氨基-4-甲基吡啶六氯斯坦酸):晶体结构、BFDH形态和导电机理
IF 4.3 3区 材料科学
Journal of Physics and Chemistry of Solids Pub Date : 2025-05-08 DOI: 10.1016/j.jpcs.2025.112840
Iheb Garoui , Sondes Hajlaoui , Mohamed Tliha , Raja Naouari , Saber Nasri , Ali Ouasri , Jérôme Lhoste , Abderrazek Oueslati
{"title":"New Organic–Inorganic chloride (2-amino-4-methylpyridinium Hexachlorostannate): Crystal structure, BFDH morphology, and electrical conduction mechanism","authors":"Iheb Garoui ,&nbsp;Sondes Hajlaoui ,&nbsp;Mohamed Tliha ,&nbsp;Raja Naouari ,&nbsp;Saber Nasri ,&nbsp;Ali Ouasri ,&nbsp;Jérôme Lhoste ,&nbsp;Abderrazek Oueslati","doi":"10.1016/j.jpcs.2025.112840","DOIUrl":"10.1016/j.jpcs.2025.112840","url":null,"abstract":"<div><div>Zero-dimensional (0D) organic–inorganic metal halides have garnered widespread attention for their exceptional chemical tunability and promising potential in optoelectronic applications. In this work, a novel (0D) organic-inorganic hybrid compound, named bis-2-amino-4- methylpyridinium hexa-chlorostannate (denoted (2A4P)<sub>2</sub>SnCl<sub>6</sub>), was successfully synthesized via the slow evaporation method at room temperature. X-ray diffraction analysis of both single crystals and powder samples revealed a pure monoclinic structure with a P2<sub>1</sub>/c space group. The Hirshfeld surfaces analysis indicates that H⋯Cl/Cl⋯H intercontact contributed significantly (68.2 %) to the (2A4P)<sub>2</sub>SnCl<sub>6</sub> crystal packing. The crystal morphology is predicted from Laue (2/m) and space group (P2<sub>1</sub>/c) symmetries of (2A4P)<sub>2</sub>SnCl<sub>6</sub>), which showed the screw axis (2<sub>1</sub>) effect on the Importance morphology facets. The thermal stability was evaluated through DSC heating analysis, and TG measurements showed that the compound remains stable up to 470 K. In contrast, the electrical properties were investigated using complex impedance spectroscopy (CIS), revealing significant dependence on both frequency and temperature, indicating the presence of a relaxation phenomenon and semiconductor-like behavior. The activation energy for the studied compound is determined using Arrhenius's formula based on DC conductivity, which found to be 0.69 eV. The alternating current conductivity (<span><math><mrow><msub><mi>σ</mi><mtext>ac</mtext></msub></mrow></math></span>) follows Jonscher's power law. Fitting the <span><math><mrow><msub><mi>σ</mi><mtext>ac</mtext></msub></mrow></math></span> curves indicates that the dominant transport mechanism is the correlated barrier hopping CBH model. Overall, the research sheds light on the synthesis, crystal arrangement, and analysis of charge transfer mechanisms in this novel semiconductor, emphasizing its electronic potential.</div></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":"206 ","pages":"Article 112840"},"PeriodicalIF":4.3,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143942468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Understanding the role of the phase type, and microstructure during pH-dependent synthesis of BiVO4 in the photoreduction of Cr(VI) ph依赖性BiVO4合成过程中相类型和微观结构在Cr(VI)光还原中的作用
IF 4.3 3区 材料科学
Journal of Physics and Chemistry of Solids Pub Date : 2025-05-08 DOI: 10.1016/j.jpcs.2025.112836
Eduardo Aguilera-Ruiz , Juan Felipe Montoya , Jorge Vazquez-Arenas , José Peral , Patricia Zambrano-Robledo , Josué Amílcar Aguilar Martínez , Ulises Matías García-Pérez
{"title":"Understanding the role of the phase type, and microstructure during pH-dependent synthesis of BiVO4 in the photoreduction of Cr(VI)","authors":"Eduardo Aguilera-Ruiz ,&nbsp;Juan Felipe Montoya ,&nbsp;Jorge Vazquez-Arenas ,&nbsp;José Peral ,&nbsp;Patricia Zambrano-Robledo ,&nbsp;Josué Amílcar Aguilar Martínez ,&nbsp;Ulises Matías García-Pérez","doi":"10.1016/j.jpcs.2025.112836","DOIUrl":"10.1016/j.jpcs.2025.112836","url":null,"abstract":"<div><div>Bismuth vanadate nanopowders were obtained by co-precipitation at room temperature using Bi(NO<sub>3</sub>)<sub>3</sub> and NH<sub>4</sub>VO<sub>3</sub>, as precursor salts. The effect of pH was comprehensively evaluated on the crystallization of the monoclinic scheelite-type (ms), and tetragonal zircon-type (tz) phases of BiVO<sub>4</sub>. Preferential crystallizations of the tz-phase and ms-phase were observed at acid and basic pH-values, respectively. The mixture of two polymorphs influenced the morphological and optical properties of the materials compared with those of pristine powders. The photoactivity of the as-synthesized powders was evaluated during the photoreduction of Cr(VI) to Cr(III) under visible-light irradiation using formic acid (65 mM) as a hole scavenger in synthetically contaminated water (30 mg L<sup>−1</sup>). The samples obtained at pH values between 4 and 8 succeeded in achieving complete reduction of Cr (VI) in less than an hour. Thus, the BiVO<sub>4</sub> phase-type in a monoclinic scheelite predominating mixture (pH 4 and 6) seems to be the most important structural factor accounting for the photoactivity towards Cr(VI) reduction, rather than the oxygen vacancy content or crystallite size.</div></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":"206 ","pages":"Article 112836"},"PeriodicalIF":4.3,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143931519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Construction of novel hybrid Z-scheme Agx/WO3@CdS decorated g-C3N4 heterojunction as composite photocatalyst for efficient degradation of organic dyes 新型杂化z型Agx/WO3@CdS修饰g-C3N4异质结高效降解有机染料复合光催化剂的构建
IF 4.3 3区 材料科学
Journal of Physics and Chemistry of Solids Pub Date : 2025-05-07 DOI: 10.1016/j.jpcs.2025.112833
Tarek A. Yousef , Ahmed T. Mosleh , M. Khairy , Hela Ferjani , Heba Y. Zahran , V. Ganesh , Samer H. Zyoud , Elbadawy A. Kamoun , Ibrahim S. Yahia
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引用次数: 0
Corrigendum to “Local and extended atomic structure of strained polycrystalline In(1-x)Al(x)Sb alloys” [J. Phys. Chem. Solid 150 (2021) 109844] “应变多晶In(1-x)Al(x)Sb合金的局部和扩展原子结构”的勘误[J]。理论物理。化学。固体150 (2021)109844]
IF 4.3 3区 材料科学
Journal of Physics and Chemistry of Solids Pub Date : 2025-05-06 DOI: 10.1016/j.jpcs.2025.112650
Charles A. Bolzan , Bernt Johannessen , Zhibin Wu , Raquel Giulian
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引用次数: 0
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