Journal of Information Display最新文献_第9页

Perceptual difference between the discomfort luminance level and the brightness of a head-mounted display (HMD) 头戴式显示器(HMD)亮度与不舒适亮度的感知差异

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2021-07-03 DOI: 10.1080/15980316.2021.1941339

Hyeyoung Ha, Y. Kwak, Hyosun Kim, Young-Jun Seo, Sung-Chan Jo

引用次数: 2

Highly efficient tandem PHOLEDs with lithium-doped BPhen/NDP-9-doped TAPC as a charge generation layer 锂掺杂BPhen/NDP-9掺杂TAPC作为电荷产生层的高效串联PHOLED

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2021-07-02 DOI: 10.1080/15980316.2021.1947403

W. Park, Dong-pil Park, Sang Soo Kim

{"title":"Highly efficient tandem PHOLEDs with lithium-doped BPhen/NDP-9-doped TAPC as a charge generation layer","authors":"W. Park, Dong-pil Park, Sang Soo Kim","doi":"10.1080/15980316.2021.1947403","DOIUrl":"https://doi.org/10.1080/15980316.2021.1947403","url":null,"abstract":"The development of large-area organic light-emitting diode (OLED) displays requires a highly efficient tandem device architecture and an easily processable charge generation layer (CGL) with a low voltage drop and high optical transparency. In this study, we investigated and applied a doped organic n-CGL/p-CGL using thermal vacuum deposition in tandem OLED devices. A doping concentration of 1.0 wt.% for Li in 4, 7-Diphenyl-1, 10-phenanthroline (BPhen) was optimal for the n-CGL with 8 wt.% for 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)-malononitrile (NDP-9)-doped N,N-bis(4-methylphenyl)benzenamine (TAPC) as a p-CGL. Maximum luminous efficiencies of 42.5 and 63.4 cd/A and a 4,000 cd/m2 current density for the target luminance values of 11.2 and 6.5 mA/cm2 were demonstrated for double-stack and triple-stack tandem blue phosphorescent OLED devices, respectively. Implementing these highly efficient tandem device structures will improve the overall lifetime of OLED displays by lowering their operating current density at the target luminance.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"45 - 52"},"PeriodicalIF":3.7,"publicationDate":"2021-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1947403","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46652579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Rapid and selective green laser activation of InGaZnO thin-film transistors through metal absorption 通过金属吸收的InGaZnO薄膜晶体管的快速选择性绿色激光激活

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2021-06-01 DOI: 10.1080/15980316.2021.1933223

J. Park, Won-Gi Kim, Hyukjoon Yoo, H. Kim, D. Choi, Min Seong Kim, Hyun Jae Kim

{"title":"Rapid and selective green laser activation of InGaZnO thin-film transistors through metal absorption","authors":"J. Park, Won-Gi Kim, Hyukjoon Yoo, H. Kim, D. Choi, Min Seong Kim, Hyun Jae Kim","doi":"10.1080/15980316.2021.1933223","DOIUrl":"https://doi.org/10.1080/15980316.2021.1933223","url":null,"abstract":"We used a pulsed green laser to activate indium gallium zinc oxide thin-film transistors (IGZO TFTs). The IGZO films with large bandgaps (>3 eV) were easily activated by heat delivered by a pulsed green laser to the gate, source, and drain metal electrodes. The IGZO TFTs were quickly and selectively activated in the absence of conventional annealing. Compared to the IGZO TFTs that were annealed at 300°C, the IGZO TFTs that were activated via pulsed green laser irradiation exhibited superior electrical characteristics: a field effect mobility of 11.98 ± 0.64 cm2 V−1 s−1, a subthreshold swing of 0.33 ± 0.02 V dec−1, and an on/off ratio of 8.28 × 109 ± 7.42 × 109, which were attributable to increases in the number of metal–oxide (M-O) bonds and oxygen vacancies, and reduced levels of OH-related species. The pulsed green laser broke weak chemical M-O bonds in the IGZO films through dihydroxylation of the OH-related species, and then strengthened the residual M-O bonds via heat transfer from the metal electrodes. This new activation process could replace conventional annealing and is expected to expand the applications of flexible and transparent devices.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"33 - 43"},"PeriodicalIF":3.7,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1933223","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46533277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Enhancement of picture quality on ultra-low brightness by optimizing the electrical potential required for OLED charging in the AMOLED displays 通过优化AMOLED显示器中OLED充电所需的电势，在超低亮度下增强图像质量

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2021-05-28 DOI: 10.1080/15980316.2021.1923581

Sehwan Na, Won Kyung Min, Do Hyung Kim, H. Hwang, Yong‐Min Ha, Hyun Jae Kim

{"title":"Enhancement of picture quality on ultra-low brightness by optimizing the electrical potential required for OLED charging in the AMOLED displays","authors":"Sehwan Na, Won Kyung Min, Do Hyung Kim, H. Hwang, Yong‐Min Ha, Hyun Jae Kim","doi":"10.1080/15980316.2021.1923581","DOIUrl":"https://doi.org/10.1080/15980316.2021.1923581","url":null,"abstract":"The principal causes of the poor picture quality on active matrix organic light-emitting diode (AMOLED) displays, operating under extremely low brightness and gray-scale conditions, were analyzed and verified by measuring and modelling of the electrical simulations. Through the analysis, it was found that the deteriorated picture quality was induced by a delayed saturation voltage, which means the electric potential difference between the initial voltage applied to the anode of the OLED (Vinit) and the OLED saturated voltage (Vsat) for emission. This is because the deviations of pico-ampere-level currents and delayed OLED charging prior to light emission increased the saturation voltage when there were low driving currents. Thus, we optimized the voltage by increasing Vinit from −4.5 to −2.7 V, effectively eliminating image deterioration by reducing the OLED charging delay. Thus, the proposed approach opens up advancements of obtaining superior picture quality with ultra-low luminance, even in the dark illuminance environments. We discuss how OLED picture quality may be enhanced under low brightness, including the driving methods, design considerations, and processes involved.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"275 - 284"},"PeriodicalIF":3.7,"publicationDate":"2021-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1923581","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43822918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Recent progress of organic light-emitting diode microdisplays for augmented reality/virtual reality applications 用于增强现实/虚拟现实应用的有机发光二极管微型显示器的最新进展

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2021-05-02 DOI: 10.1080/15980316.2021.1917461

Chan-mo Kang, Hyunkoo Lee

引用次数: 21

Indium oxide nanomesh-based electrolyte-gated synaptic transistors 基于氧化铟纳米网的电解门控突触晶体管

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2021-04-23 DOI: 10.1080/15980316.2021.1911866

Wei Qin, B. Kang, Jongyeop An, Hyun Jae Kim

引用次数: 5

Interfaces and pattern resolution of inkjet-printed organic light-emitting diodes with a novel hole transport layer 具有新型空穴传输层的喷墨打印有机发光二极管的界面和图案分辨率

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2021-04-03 DOI: 10.1080/15980316.2020.1866090

D. Yoon, Y. Kang, R. Bail, B. Chin

{"title":"Interfaces and pattern resolution of inkjet-printed organic light-emitting diodes with a novel hole transport layer","authors":"D. Yoon, Y. Kang, R. Bail, B. Chin","doi":"10.1080/15980316.2020.1866090","DOIUrl":"https://doi.org/10.1080/15980316.2020.1866090","url":null,"abstract":"In this paper, the effects of the combination of solvents on the uniformity of a dried emitting layer and on device performance were studied. Green emitter inks with various solvents were prepared, and it was seen that good film uniformity of printed layers could be obtained with a solvent mixture with different boiling points, which reduced the coffee ring effect on a dried surface. During the inkjet process, the drop injection condition aiming was also controlled for better drop-to-drop spacing and reduction of the line-edge roughness. Printed patterns of a small molecular/polymer hybrid emitting layer, composed of the chlorobenzene-dichlorobenzene solvent mixture, showed significantly reduced roughness of the microscopic surface and improved efficiency of the inkjet device, at levels nearly comparable to those of spin-coated patterns. A suitable hole transport layer (HTL) was also further developed as an interfacial material, prior to the solution processing of the emitter. The cross-linkable HTL was composed of triphenylamine as the cross-linking unit and a fluorene-based compound. At the optimized condition of the solvent formulation, printed droplets within 100 µm× 300 µm pixels formed a uniform stripe without remarkable coffee-ring defects and line-edge surface roughness.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"91 - 98"},"PeriodicalIF":3.7,"publicationDate":"2021-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2020.1866090","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47148982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Security use of bilayer dichroic films made of liquid crystal polymer networks 液晶聚合物网络双层二向色膜的安全应用

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2021-03-30 DOI: 10.1080/15980316.2021.1905723

Geonhyeong Park, D. Yoon

引用次数: 2

High aspect ratio microdisplay and thin optical component for glass-like AR devices 用于玻璃状AR设备的高宽高比微显示器和薄光学元件

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2021-03-22 DOI: 10.1080/15980316.2021.1902405

Chan-mo Kang, Jin‐Wook Shin, Sukyung Choi, Byoung‐Hwa Kwon, Hyunsu Cho, N. Cho, Jeong-Ik Lee, Hyunkoo Lee, Jeong Hwan Lee, Hokwon Kim, Ara Cho, Sang Hyun Park, Minseok Kim, Soon-gi Park, Young-Joon Kim, Jeonghun Ha, Jaehyeok Kim, S. Kim, J. S. Lee, Seung No Lee, Yu-Bin Im, C. Byun

{"title":"High aspect ratio microdisplay and thin optical component for glass-like AR devices","authors":"Chan-mo Kang, Jin‐Wook Shin, Sukyung Choi, Byoung‐Hwa Kwon, Hyunsu Cho, N. Cho, Jeong-Ik Lee, Hyunkoo Lee, Jeong Hwan Lee, Hokwon Kim, Ara Cho, Sang Hyun Park, Minseok Kim, Soon-gi Park, Young-Joon Kim, Jeonghun Ha, Jaehyeok Kim, S. Kim, J. S. Lee, Seung No Lee, Yu-Bin Im, C. Byun","doi":"10.1080/15980316.2021.1902405","DOIUrl":"https://doi.org/10.1080/15980316.2021.1902405","url":null,"abstract":"Organic light-emitting diode (OLED) microdisplays have attracted much attention as displays for small form factor augmented reality (AR) devices. To realize glass-like thin and wide field of view (FoV) AR devices, we designed a display module with a high aspect ratio microdisplay and a thin optical component. For the high aspect ratio microdisplay, we developed the color OLED microdisplay with a 32:9 aspect ratio and a 0.8-inch diagonal ∼2,490-ppi CMOS backplane. To express color and reduce optical crosstalk, we fabricated the color filter (C/F) patterning directly on the white OLED. We also developed a pin mirror lens with 11 pin mirrors to improve the optical efficiency and quality with a thin lens. By combining the microdisplay with LetinAR’s pin mirror lens, we successfully demonstrated an AR device with a wide horizontal FoV of 46° but with a small form factor 4 mm lens.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"163 - 171"},"PeriodicalIF":3.7,"publicationDate":"2021-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1902405","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45591610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Effects of the grain boundary protrusion position on the off-state current of polycrystalline silicon thin-film transistors 晶界突起位置对多晶硅薄膜晶体管断态电流的影响

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2021-03-09 DOI: 10.1080/15980316.2021.1896587

JooWon Yang, Yong-Sang Kim, J. Jeon, K. Park

{"title":"Effects of the grain boundary protrusion position on the off-state current of polycrystalline silicon thin-film transistors","authors":"JooWon Yang, Yong-Sang Kim, J. Jeon, K. Park","doi":"10.1080/15980316.2021.1896587","DOIUrl":"https://doi.org/10.1080/15980316.2021.1896587","url":null,"abstract":"ABSTRACT We report the effects of grain boundary (GB) protrusion on the off-state current (IOFF) of p-channel polycrystalline silicon thin-film transistors by using three-dimensional technology computer-aided design (TCAD) simulation. We found that the IOFF at a high drain bias, VDS = −10 V, varies more than 10 times as the position of the GB protrusion changes, whereas it varies less than two times if the GB has no protrusion, i.e. has a flat surface. The TCAD analysis showed that the IOFF was mainly caused by band-to-band tunneling and that it increased noticeably when the GB protrusion was located at a certain distance from the highly doped drain region because the GB protrusion intensified the electric field at the drain junction. We also found that the IOFF increases further when the GB line is not perpendicular to the channel direction but has some tilt angle because the GB protrusion necessarily encompassed a critical region that maximized the electric field when it was positioned within the GB protrusion.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"22 1","pages":"153 - 162"},"PeriodicalIF":3.7,"publicationDate":"2021-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15980316.2021.1896587","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42198546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1