基于氧化铟纳米网的电解门控突触晶体管

IF 3.7 3区工程技术 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Information Display Pub Date : 2021-04-23 DOI:10.1080/15980316.2021.1911866

Wei Qin, B. Kang, Jongyeop An, Hyun Jae Kim

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引用次数: 5

摘要

摘要基于离子在正栅极偏压下在1-乙基-3-甲基咪唑鎓二氰基酰胺（[EMIM]DCA）电解质中的移动和积累，在纳米网沟道和[EMIM]DCA电解质之间形成了双电层（EDL），以促进沟道电导的增加。成功实现了人工突触的基本功能，如兴奋性突触后电流（EPSC）、成对脉冲促进（PPF）、短期可塑性（STP）和长期可塑性（LTP）。此外，还实现了高通滤波器功能，显示了该器件在信号处理中的应用潜力。

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Indium oxide nanomesh-based electrolyte-gated synaptic transistors

ABSTRACT Based on the movement and accumulation of ions in the 1-ethyl-3-methylimidazolium dicyanamide ([EMIM]DCA) electrolyte under a positive gate bias, the electrical double layer (EDL) was formed between a nanomesh channel and the [EMIM]DCA electrolyte to contribute to the increase in the conductance of the channel. The basic functions of artificial synapses, such as excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), short-term plasticity (STP), and long-term plasticity (LTP), are realized successfully. Besides, the high-pass filter function was implemented, which shows the application potential of the device in signal processing.

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来源期刊

Journal of Information Display MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

7.10

自引率

5.40%

发文量

审稿时长

30 weeks