Rapid and selective green laser activation of InGaZnO thin-film transistors through metal absorption

IF 3.7 3区 工程技术 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
J. Park, Won-Gi Kim, Hyukjoon Yoo, H. Kim, D. Choi, Min Seong Kim, Hyun Jae Kim
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引用次数: 3

Abstract

We used a pulsed green laser to activate indium gallium zinc oxide thin-film transistors (IGZO TFTs). The IGZO films with large bandgaps (>3 eV) were easily activated by heat delivered by a pulsed green laser to the gate, source, and drain metal electrodes. The IGZO TFTs were quickly and selectively activated in the absence of conventional annealing. Compared to the IGZO TFTs that were annealed at 300°C, the IGZO TFTs that were activated via pulsed green laser irradiation exhibited superior electrical characteristics: a field effect mobility of 11.98 ± 0.64 cm2 V−1 s−1, a subthreshold swing of 0.33 ± 0.02 V dec−1, and an on/off ratio of 8.28 × 109 ± 7.42 × 109, which were attributable to increases in the number of metal–oxide (M-O) bonds and oxygen vacancies, and reduced levels of OH-related species. The pulsed green laser broke weak chemical M-O bonds in the IGZO films through dihydroxylation of the OH-related species, and then strengthened the residual M-O bonds via heat transfer from the metal electrodes. This new activation process could replace conventional annealing and is expected to expand the applications of flexible and transparent devices.
通过金属吸收的InGaZnO薄膜晶体管的快速选择性绿色激光激活
我们使用脉冲绿色激光激活铟镓锌氧化物薄膜晶体管(IGZO TFT)。具有大带隙(>3)的IGZO薄膜 eV)容易被脉冲绿色激光传递到栅极、源极和漏极金属电极的热量激活。IGZO TFT在没有常规退火的情况下被快速且选择性地激活。与在300°C下退火的IGZO TFT相比,通过脉冲绿色激光照射激活的IGZOTFT表现出优异的电学特性:场效应迁移率为11.98 ± 0.64 cm2 V−1 s−1,0.33的亚阈值摆动 ± 0.02 五、 dec−1,开/关比为8.28 × 109 ± 7.42 × 109,这归因于金属-氧化物(M-O)键和氧空位的数量增加,以及OH相关物种的水平降低。脉冲绿色激光通过OH相关物质的二羟基化破坏了IGZO膜中的弱化学M-O键,然后通过金属电极的热传递增强了残留的M-O键。这种新的激活工艺可以取代传统的退火,有望扩大柔性和透明器件的应用。
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来源期刊
Journal of Information Display
Journal of Information Display MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
7.10
自引率
5.40%
发文量
27
审稿时长
30 weeks
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