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2006 International Conference on MEMS, NANO, and Smart Systems最新文献

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An Advanced Model for Dopant Diffusion in Polycrystalline silicon during rapid thermal annealing 多晶硅快速热退火过程中掺杂物扩散的先进模型
2006 International Conference on MEMS, NANO, and Smart Systems Pub Date : 2006-12-01 DOI: 10.1109/ICMENS.2006.348206
S. Abadli, F. Mansour
{"title":"An Advanced Model for Dopant Diffusion in Polycrystalline silicon during rapid thermal annealing","authors":"S. Abadli, F. Mansour","doi":"10.1109/ICMENS.2006.348206","DOIUrl":"https://doi.org/10.1109/ICMENS.2006.348206","url":null,"abstract":"We have investigated and modelled the diffusion of boron implanted into polycrystalline silicon. A one-dimensional two stream diffusion model adapted to the granular structure of polysilicon and to the effects of the strong-concentrations has been developed. This model includes dopant clustering in grains as well as in grain boundaries. The grains-growth and energy barrier height are coupled with the dopant diffusion coefficients and the process temperature based on thermodynamic concepts. The simulation well reproduces the experimental profiles when crystallisation and clustering are considered. The trapping-emission mechanism between grains and grain boundaries and segregation are the major effects during annealing process","PeriodicalId":156757,"journal":{"name":"2006 International Conference on MEMS, NANO, and Smart Systems","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116602954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monte Carlo Simulation of Photonic Band Gap Structures 光子带隙结构的蒙特卡罗模拟
2006 International Conference on MEMS, NANO, and Smart Systems Pub Date : 2006-12-01 DOI: 10.1109/ICMENS.2006.348216
T. Badreldin, D. Khalil
{"title":"Monte Carlo Simulation of Photonic Band Gap Structures","authors":"T. Badreldin, D. Khalil","doi":"10.1109/ICMENS.2006.348216","DOIUrl":"https://doi.org/10.1109/ICMENS.2006.348216","url":null,"abstract":"We developed a statistical Monte Carlo technique for the performance analysis of photonic band gap structures. The randomness nature of the fabrication process of the photonic crystals is taken into account in this analysis. The technique is applied on the bandgap calculation of two-dimensional photonic crystals to study the effect of manufacturing imperfections on the photonic band gap. This helps to establish a design for manufacturability for the photonic crystals","PeriodicalId":156757,"journal":{"name":"2006 International Conference on MEMS, NANO, and Smart Systems","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122698874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly Efficient Micromachined Bragg Mirrors Using Advanced DRIE Process 高效微加工Bragg镜采用先进的驱动器工艺
2006 International Conference on MEMS, NANO, and Smart Systems Pub Date : 2006-12-01 DOI: 10.1109/ICMENS.2006.348215
B. Saadany, D. Khalil, T. Bourouina
{"title":"Highly Efficient Micromachined Bragg Mirrors Using Advanced DRIE Process","authors":"B. Saadany, D. Khalil, T. Bourouina","doi":"10.1109/ICMENS.2006.348215","DOIUrl":"https://doi.org/10.1109/ICMENS.2006.348215","url":null,"abstract":"A novel advanced deep reactive ion etching (DRIE) process technique is used to realize highly efficient vertical Bragg mirrors. The Bragg mirrors are realized by anisotropic etching of Si using DRIE, thus producing successive vertical interfaces between Si and air. The new etching technique is based on combining 2 steps of cryogenic and Bosch DRIE processes to obtain high quality Si walls in terms of both: high aspect ratio vertical walls as well as smooth surface. The realized Bragg mirrors, fabrication process, as well as measured optical performance showing the advantages of the new technique are presented","PeriodicalId":156757,"journal":{"name":"2006 International Conference on MEMS, NANO, and Smart Systems","volume":"273 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133046013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Preparation of Polyimide Nanofibers by Electrospinning 静电纺丝法制备聚酰亚胺纳米纤维
2006 International Conference on MEMS, NANO, and Smart Systems Pub Date : 2006-12-01 DOI: 10.1109/ICMENS.2006.348217
Mingyan Zhang, Zhaoli Wang, Yujun Zhang
{"title":"Preparation of Polyimide Nanofibers by Electrospinning","authors":"Mingyan Zhang, Zhaoli Wang, Yujun Zhang","doi":"10.1109/ICMENS.2006.348217","DOIUrl":"https://doi.org/10.1109/ICMENS.2006.348217","url":null,"abstract":"Polyimide nanofibers were obtained by electrospinning a solution of poly(amic acid)(PAA), a precursor of polyimide(PI) prepared in the laboratory, in dimethylacetamide(DMAc) at 14kV, followed by thermal imidization. Mechanical property of the resulting nanofiber non-woven membranes was investigated by tensile tests. Chemical structure and surface morphology of the non-woven mats were characterized by Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM) as well as atomic force microscope (AFM) respectively","PeriodicalId":156757,"journal":{"name":"2006 International Conference on MEMS, NANO, and Smart Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128876850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Performance Enhancement of Gap Closing Electrostatic MEMS Converters 闭式静电MEMS变换器的性能提升
2006 International Conference on MEMS, NANO, and Smart Systems Pub Date : 2006-12-01 DOI: 10.1109/ICMENS.2006.348214
M. Salem, M. Salem, A. Zekry, H. F. Ragai
{"title":"Performance Enhancement of Gap Closing Electrostatic MEMS Converters","authors":"M. Salem, M. Salem, A. Zekry, H. F. Ragai","doi":"10.1109/ICMENS.2006.348214","DOIUrl":"https://doi.org/10.1109/ICMENS.2006.348214","url":null,"abstract":"This paper proposes new ideas to enhance the output power of the gap closing electrostatic MEMS converters. This is done by including the effect of the parallel capacitance of the converter in the output power equation. In addition the output power of the converter has increased by increasing the converter thickness","PeriodicalId":156757,"journal":{"name":"2006 International Conference on MEMS, NANO, and Smart Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131117767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Simple Model for the Single-Electron Transistor (SET) 一种新的单电子晶体管(SET)简单模型
2006 International Conference on MEMS, NANO, and Smart Systems Pub Date : 2006-12-01 DOI: 10.1109/ICMENS.2006.348205
M. Ismail, R. Abdelrassoul
{"title":"A New Simple Model for the Single-Electron Transistor (SET)","authors":"M. Ismail, R. Abdelrassoul","doi":"10.1109/ICMENS.2006.348205","DOIUrl":"https://doi.org/10.1109/ICMENS.2006.348205","url":null,"abstract":"We present a new model for simulating the I-V characteristics of a single-electron transistor (SET) at the steady-state mode based on a reduced master equation (ME) method. The model is accurate, fast and less numerically intensive. A comparison is made between SET simulation using our model and that generated by the model based on full master equation method of the quantum transport (QT) research group at Delft University, which considers all possible charge states in the tunnel junction. The comparison shows that results of our fast model are in excellent agreement with QT's results at low bias conditions, but show some deviation at large bias, the footnote at the bottom of this column","PeriodicalId":156757,"journal":{"name":"2006 International Conference on MEMS, NANO, and Smart Systems","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125130175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Wafer Level Package Using Polymer Bonding of Thick SU-8 Photoresist 采用厚SU-8光刻胶聚合物键合的晶圆级封装
2006 International Conference on MEMS, NANO, and Smart Systems Pub Date : 2006-12-01 DOI: 10.1109/ICMENS.2006.348211
Kyounghwan Na, Illhwan Kim, Eunsung Lee, H. Kim, Yongjae Lee, K. Chun
{"title":"Wafer Level Package Using Polymer Bonding of Thick SU-8 Photoresist","authors":"Kyounghwan Na, Illhwan Kim, Eunsung Lee, H. Kim, Yongjae Lee, K. Chun","doi":"10.1109/ICMENS.2006.348211","DOIUrl":"https://doi.org/10.1109/ICMENS.2006.348211","url":null,"abstract":"For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, thickness of spacer and size and shape of pattern can be easy to control. This paper presents polymer bonding with thick, uniform and patterned spacing layer using SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and is cured at 95degC and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with 400 mum of thickness and 3.25% of uniformity through single coating. Also we performed silicon to glass bonding with thick, uniform and patterned spacing layer of SU-8 photoresist for wafer level package","PeriodicalId":156757,"journal":{"name":"2006 International Conference on MEMS, NANO, and Smart Systems","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116318245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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