A New Simple Model for the Single-Electron Transistor (SET)

Abstract

We present a new model for simulating the I-V characteristics of a single-electron transistor (SET) at the steady-state mode based on a reduced master equation (ME) method. The model is accurate, fast and less numerically intensive. A comparison is made between SET simulation using our model and that generated by the model based on full master equation method of the quantum transport (QT) research group at Delft University, which considers all possible charge states in the tunnel junction. The comparison shows that results of our fast model are in excellent agreement with QT's results at low bias conditions, but show some deviation at large bias, the footnote at the bottom of this column