Journal of Applied Physics最新文献_第7页

Atomistic simulation on the deposition behavior of cold spray 冷喷沉积行为的原子模拟

IF 3.2 3区物理与天体物理

Journal of Applied Physics Pub Date : 2024-09-09 DOI: 10.1063/5.0218416

Jianrui Feng, Erfeng An, Wensen Zhao

{"title":"Atomistic simulation on the deposition behavior of cold spray","authors":"Jianrui Feng, Erfeng An, Wensen Zhao","doi":"10.1063/5.0218416","DOIUrl":"https://doi.org/10.1063/5.0218416","url":null,"abstract":"Cold spray is an effective method for surface coating, which has been applied in various engineering areas. However, it is difficult to directly observe the dynamic deformation process in experiments. This paper applies the molecular dynamics simulation to model the deposition of a monocrystalline Cu particle onto a Cu substrate and, subsequently, carries out a systematic study on the deposition mechanism and microstructure evolution. The results indicate that the deposition process consists of an impact stage and a relaxation stage. It is mainly the high speed collision and the friction following the collision that lead to particle deposition, which, under different circumstances, can be defined as surface deposition or penetration deposition. Two methods, namely, drastic shear deformation and cooling in the relaxation stage, can help form nanocrystallines. Jetting and melting are not the necessary factors for the deposition of nano-sized particles. The formation of dislocation lines is influenced by impact velocities. At lower impact velocities, the dislocation lines are mainly distributed near the contact surface. However, when the impact velocity is higher, dislocation lines are almost uniformly distributed in the particle.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"15 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electromagnetic modulating action in a microstrip cavity with embedded two detuned resonators 嵌入两个失谐谐振器的微带空腔中的电磁调制作用

IF 3.2 3区物理与天体物理

Journal of Applied Physics Pub Date : 2024-09-09 DOI: 10.1063/5.0227168

Rui Jiang, Lei Gao, Lei Yang, Wenzhe He, Jun Wang, Qian Wu, Yong Sun, Quanying Wu, Yongqiang Chen

{"title":"Electromagnetic modulating action in a microstrip cavity with embedded two detuned resonators","authors":"Rui Jiang, Lei Gao, Lei Yang, Wenzhe He, Jun Wang, Qian Wu, Yong Sun, Quanying Wu, Yongqiang Chen","doi":"10.1063/5.0227168","DOIUrl":"https://doi.org/10.1063/5.0227168","url":null,"abstract":"We present a novel approach for actively controlling electromagnetically induced transparency (EIT) analogs in a single-mode microstrip cavity. This cavity is side-coupled with a pair of varactor-loaded split-ring resonators (SRRs). The EIT-like effect is achieved through resonance hybridization between the paired SRRs with frequency detuning. The microstrip cavity is utilized to enhance the EIT-like transmission properties, including Q-factor and group delay. Varactor diodes, soldered at the gap of the SRRs, are biased electrically through a DC voltage source. This dynamic modulation setup allows for the tuning of the enhanced EIT analog. Experimental results demonstrate that the enhanced EIT-like transmission spectrum can be tuned reversibly by 378 MHz with respect to the transmission dip frequency of 2.464 GHz under the bias voltage ranging from 0 to 5 V. Simultaneously, the controlled transmission spectrum enables a remarkable change in group delay of 10.9 ns. Moreover, the modulation amplitude of the composite SRRs-cavity structure reaches a peak value of up to 34.5 dB, significantly higher than the 6.4 dB of the individual SRRs pair. These results hold promise for inspiring innovation in actively controlled photonic devices for practical applications.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"16 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Near-infrared irradiation study of honey-mediated Au nanoparticles for photothermal therapy 用于光热疗法的蜂蜜介导金纳米粒子的近红外辐照研究

IF 3.2 3区物理与天体物理

Journal of Applied Physics Pub Date : 2024-09-09 DOI: 10.1063/5.0219146

K. Kan-Dapaah, J. A. Aidoo, B. Agyei-Tuffour, B. Mensah, A. Yaya, S. A. Abudu, S. W. K. Hatekah

引用次数: 0

Unraveling impacts of polycrystalline microstructures on ionic conductivity of ceramic electrolytes by computational homogenization and machine learning 通过计算均质化和机器学习揭示多晶微结构对陶瓷电解质离子电导率的影响

IF 3.2 3区物理与天体物理

Journal of Applied Physics Pub Date : 2024-09-09 DOI: 10.1063/5.0223138

Xiang-Long Peng, Bai-Xiang Xu

{"title":"Unraveling impacts of polycrystalline microstructures on ionic conductivity of ceramic electrolytes by computational homogenization and machine learning","authors":"Xiang-Long Peng, Bai-Xiang Xu","doi":"10.1063/5.0223138","DOIUrl":"https://doi.org/10.1063/5.0223138","url":null,"abstract":"The ionic conductivity at the grain boundaries (GBs) in oxide ceramics is typically several orders of magnitude lower than that within the grain interior. This detrimental GB effect is the main bottleneck for designing high-performance ceramic electrolytes intended for use in solid-state lithium-ion batteries, fuel cells, and electrolyzer cells. The macroscopic ionic conductivity in oxide ceramics is essentially governed by the underlying polycrystalline microstructures where GBs and grain morphology go hand in hand. This provides the possibility to enhance the ion conductivity by microstructure engineering. To this end, a thorough understanding of microstructure–property correlation is highly desirable. In this work, we investigate numerous polycrystalline microstructure samples with varying grain and grain boundary features. Their macroscopic ionic conductivities are numerically evaluated by the finite element homogenization method, whereby the GB resistance is explicitly regarded. The influence of different microstructural features on the effective ionic conductivity is systematically studied. The microstructure–property relationships are revealed. Additionally, a graph neural network-based machine learning model is constructed and trained. It can accurately predict the effective ionic conductivity for a given polycrystalline microstructure. This work provides crucial quantitative guidelines for optimizing the ionic conducting performance of oxide ceramics by tailoring microstructures.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"61 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A practical guide to light-sheet microscopy for nanoscale imaging: Looking beyond the cell. 用于纳米级成像的光片显微镜实用指南：超越细胞。

IF 2.7 3区物理与天体物理

Journal of Applied Physics Pub Date : 2024-09-07 Epub Date: 2024-09-04 DOI: 10.1063/5.0218262

Stephanie N Kramer, Jeanpun Antarasen, Cole R Reinholt, Lydia Kisley

引用次数: 0

Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC 反应离子蚀刻在 4H-SiC 表面附近产生的电子和空穴陷阱的深度剖面图

IF 3.2 3区物理与天体物理

Journal of Applied Physics Pub Date : 2024-09-06 DOI: 10.1063/5.0221700

Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto

{"title":"Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC","authors":"Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto","doi":"10.1063/5.0221700","DOIUrl":"https://doi.org/10.1063/5.0221700","url":null,"abstract":"Deep levels in the whole bandgap of 4H-SiC generated by reactive ion etching (RIE) are investigated with both n- and p-type SiC Schottky barrier diodes by deep-level transient spectroscopy (DLTS). Depth profiles of the observed deep levels were analyzed using the DLTS peak intensities at various bias voltages and numerical calculations. The major electron traps detected after RIE and subsequent annealing at 1300 °C include the Z1/2 (EC−0.66 eV), ON1 (EC−0.88 eV), ON2 (EC−0.95 eV), and EH6/7 (EC−1.50 eV) centers, and the major hole traps include the UK1 (EV+0.51 eV), UK2 (EV+0.72 eV), HK0 (EV+0.77 eV), HK2 (EV+0.79 eV), and HK3 (EV+1.31 eV) centers, where EC and EV denote the conduction and valence band edges, respectively. Most of the traps were localized near the surface (&lt;0.5 μm) with a maximum density of about 1×1015 cm−3, but several traps such as the ON1 and HK0 centers penetrate deep into the bulk region (&gt;2 μm). By annealing at 1400 °C, most of the hole traps were eliminated, but several electron traps remained. From these results, the origins of these defects are discussed.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"43 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strain engineering in 2D FETs: Physics, status, and prospects 二维场效应晶体管中的应变工程：物理学、现状和前景

IF 3.2 3区物理与天体物理

Journal of Applied Physics Pub Date : 2024-09-06 DOI: 10.1063/5.0211555

Ankit Kumar, Lin Xu, Arnab Pal, Kunjesh Agashiwala, Kamyar Parto, Wei Cao, Kaustav Banerjee

{"title":"Strain engineering in 2D FETs: Physics, status, and prospects","authors":"Ankit Kumar, Lin Xu, Arnab Pal, Kunjesh Agashiwala, Kamyar Parto, Wei Cao, Kaustav Banerjee","doi":"10.1063/5.0211555","DOIUrl":"https://doi.org/10.1063/5.0211555","url":null,"abstract":"In this work, we explore the physics and evaluate the merits of strain engineering in two-dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT (density functional theory) to determine the modulation of the channel material properties under strain, and subsequently, their effect on carrier transport properties, i.e., scattering rates, mobility, and then finally simulate and analyze dissipative current transport with a non-equilibrium Green's function–Poisson's equation self-consistent solver. The scattering model includes the effects of charged impurities, intrinsic phonons, and remote phonons as well as the screening effect due to charged carriers. Impact of strain engineering on contact resistance is also incorporated into the transport simulations to determine the potential performance enhancements using strain in practical devices. Based on the comprehensive simulation results, we identify the materials and strain configuration that provide the best improvement in performance. We demonstrate an ON-current gain of 43.3% in a biaxially compressively strained monolayer MoSe2 device achieved through unique valley-crossing. Furthermore, implications of strain engineering for emerging energy-efficient devices based on band-to-band tunneling and spintronics are evaluated to explore uncharted frontiers in beyond-CMOS electron devices.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"9 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dielectric responses of spin-density wave in La1.67Sr0.33NiO4 single crystal La1.67Sr0.33NiO4 单晶中自旋密度波的介电响应

IF 3.2 3区物理与天体物理

Journal of Applied Physics Pub Date : 2024-09-06 DOI: 10.1063/5.0219900

Mochammad Yan Pandu Akbar, Syafitra Salam, Cristoph P. Grams, Markus Diantoro, Bambang Prijamboedi, Joachim Hemberger, Agustinus Agung Nugroho

引用次数: 0

Tutorial: Defects in topological semimetals 教程：拓扑半金属中的缺陷

IF 3.2 3区物理与天体物理

Journal of Applied Physics Pub Date : 2024-09-05 DOI: 10.1063/5.0217533

Kirstin Alberi, Chase Brooks, Ian Leahy, Stephan Lany

引用次数: 0

Coupled electro-chemo-viscoelastic constitutive model for a supercapacitor electrode 超级电容器电极的电化学-粘弹性耦合构造模型

IF 3.2 3区物理与天体物理

Journal of Applied Physics Pub Date : 2024-09-05 DOI: 10.1063/5.0209577

James G. Boyd, Dimitrios Loufakis, Jodie L. Lutkenhaus

{"title":"Coupled electro-chemo-viscoelastic constitutive model for a supercapacitor electrode","authors":"James G. Boyd, Dimitrios Loufakis, Jodie L. Lutkenhaus","doi":"10.1063/5.0209577","DOIUrl":"https://doi.org/10.1063/5.0209577","url":null,"abstract":"The motion of ions in supercapacitor electrodes produces internal stresses that cause viscoelastic strains. In addition, stresses may be due to external forces applied to structural supercapacitors, which are multifunctional materials that simultaneously store energy and carry structural loads. There are currently no thermodynamics-based models for the coupled electro-chemo-viscoelastic response of electrodes. Here, the same thermodynamics model is used for both the viscoelastic response and the electrochemical response. This mathematical equivalence is a reference from which to study coupling between the viscoelastic and electrochemical responses. The model has two inputs (stress or strain and electric potential or specific charge) and two outputs (strain or stress and specific charge or electric potential). The coupling is studied by adding three constants in the free energy. The convexity of the free energy and the stability of the free response limit the magnitude of the coupling. The unit response matrix is derived, and results are given for the time and frequency domains. The effect of an applied potential on stress is shown to be much more significant than the converse effect. The model compares well to an experiment consisting of a cyclic electric current applied during stress relaxation.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"18 1","pages":""},"PeriodicalIF":3.2,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142204322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0