Strain engineering in 2D FETs: Physics, status, and prospects

Abstract

In this work, we explore the physics and evaluate the merits of strain engineering in two-dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT (density functional theory) to determine the modulation of the channel material properties under strain, and subsequently, their effect on carrier transport properties, i.e., scattering rates, mobility, and then finally simulate and analyze dissipative current transport with a non-equilibrium Green's function–Poisson's equation self-consistent solver. The scattering model includes the effects of charged impurities, intrinsic phonons, and remote phonons as well as the screening effect due to charged carriers. Impact of strain engineering on contact resistance is also incorporated into the transport simulations to determine the potential performance enhancements using strain in practical devices. Based on the comprehensive simulation results, we identify the materials and strain configuration that provide the best improvement in performance. We demonstrate an ON-current gain of 43.3% in a biaxially compressively strained monolayer MoSe2 device achieved through unique valley-crossing. Furthermore, implications of strain engineering for emerging energy-efficient devices based on band-to-band tunneling and spintronics are evaluated to explore uncharted frontiers in beyond-CMOS electron devices.