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The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology最新文献

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A miniaturized FM chip antennas for handset devices 一种用于手机设备的小型化调频芯片天线
The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI: 10.1109/MMWCST.2012.6238213
Shi-ming Song, Long Jin, Yi Zheng, Guo-qing Yang
{"title":"A miniaturized FM chip antennas for handset devices","authors":"Shi-ming Song, Long Jin, Yi Zheng, Guo-qing Yang","doi":"10.1109/MMWCST.2012.6238213","DOIUrl":"https://doi.org/10.1109/MMWCST.2012.6238213","url":null,"abstract":"In this paper, a new internal miniaturized FM chip antenna is presented. It uses the dual-layer helical meander line structure to reduce FM chip antenna's volume which is only 22mm × 4.4mm × 0.6mm. Due to its small volume and mature technology of PCB, it is not only easy to integrate in many types of handset devices, but also easy and cheap in mass production.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"304 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122248017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design of a novel compact combline filter 一种新型紧凑型组合滤波器的设计
The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI: 10.1109/MMWCST.2012.6238123
Guojian Wu, Qingyuan Wang, Kunshan Mo, Yicheng Tan
{"title":"Design of a novel compact combline filter","authors":"Guojian Wu, Qingyuan Wang, Kunshan Mo, Yicheng Tan","doi":"10.1109/MMWCST.2012.6238123","DOIUrl":"https://doi.org/10.1109/MMWCST.2012.6238123","url":null,"abstract":"This paper proposes a novel resonator to achieve miniaturization of combline filter. The proposed resonator is similar to helical resonator. To demonstrate the validity of the proposed resonator, a pass-band filter with a center frequency of 160MHz and a relative bandwidth of 50% is presented. Simulation results show that this new design can reduce the dimensions by 25% compared with the conventional combline filter with M-shaped structure of capacitance-loaded.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127164381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Producing high current sheet electron beam with compact, repetitive Tesla generator 用紧凑、重复的特斯拉发生器产生高电流的片状电子束
The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI: 10.1109/MMWCST.2012.6238203
Zhanliang Wang, Y. Gong, Yanyu Wei, Z. Duan, H. Gong, Zhigang Lu, Lingna Yue, H. Yin, Jin Xu, Jinjun Feng
{"title":"Producing high current sheet electron beam with compact, repetitive Tesla generator","authors":"Zhanliang Wang, Y. Gong, Yanyu Wei, Z. Duan, H. Gong, Zhigang Lu, Lingna Yue, H. Yin, Jin Xu, Jinjun Feng","doi":"10.1109/MMWCST.2012.6238203","DOIUrl":"https://doi.org/10.1109/MMWCST.2012.6238203","url":null,"abstract":"Sheet electron beam device has the potential for high-power millimeter wave to terahertz regime radiation. A key part of this system is a high current sheet electron beam source. This paper introduces our currently ongoing program on producing high current, high aspect ratio sheet electron beam with compact, repetitive 160KV generator. In our experimental, a cathode which looks like a blade and a slit anode is fabricated. High current sheet electron beam is transported in a solenoid. Here we report the experimental demonstration.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130373410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Nanosecond high voltage pulse generator for biological and biomedical application 用于生物和生物医学应用的纳秒高压脉冲发生器
The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI: 10.1109/MMWCST.2012.6238165
Yafang Tan, Jun Xu, G. Zeng
{"title":"Nanosecond high voltage pulse generator for biological and biomedical application","authors":"Yafang Tan, Jun Xu, G. Zeng","doi":"10.1109/MMWCST.2012.6238165","DOIUrl":"https://doi.org/10.1109/MMWCST.2012.6238165","url":null,"abstract":"Benefit from photoconductive semiconductor switches (PCSS's) fast response, high power, high stability and long lifetime properties, design and operation of high voltage nanosecond power generator based on PCSS for biological and biomedical application is presented. The generator comprises of pulse power source, photoelectric synchronization control apparatus, PCSS based on Blumlein transforming line and laser diode circuit. It produces 1 kHz repetition frequency rate (RFR), 1-5 ns pulse duration, 1-10 kV amplitude pulses, which can be used in cancer treatment.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133478558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a 183GHz passive five times multiplier 183GHz被动五倍乘法器的设计
The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI: 10.1109/MMWCST.2012.6238169
Ge Liu, Bo Zhang, Yong Fan
{"title":"Design of a 183GHz passive five times multiplier","authors":"Ge Liu, Bo Zhang, Yong Fan","doi":"10.1109/MMWCST.2012.6238169","DOIUrl":"https://doi.org/10.1109/MMWCST.2012.6238169","url":null,"abstract":"We report on design and analysis of a 183GHz passive five times multiplier. No mechanical tuners and simple circuit topology make it easy and cheap to fabricate the five times multiplier. We design, simulate and optimize the circuit of the five times multiplier in the software of HFSS and ADS. It includes several parts like waveguide to micro-strip transition, ideal LPF, a pair of DBES105a GaAs Schottky barrier diodes and micro-strip to waveguide transition. The proper circuit design can effectively suppress the high-order harmonic waves.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"228 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130963211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A linear phased array with reconfigurable dynamic Yagi-Uda patch antenna elements 具有可重构动态Yagi-Uda贴片天线元件的线性相控阵
The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI: 10.1109/MMWCST.2012.6238181
Jian Zhang, Xue‐Song Yang, Jia‐lin Li, Bing-Zhong Wang
{"title":"A linear phased array with reconfigurable dynamic Yagi-Uda patch antenna elements","authors":"Jian Zhang, Xue‐Song Yang, Jia‐lin Li, Bing-Zhong Wang","doi":"10.1109/MMWCST.2012.6238181","DOIUrl":"https://doi.org/10.1109/MMWCST.2012.6238181","url":null,"abstract":"Phased array with wide scanning angle is important to radars, satellite communications and wireless communications. A linear phased array with reconfigurable dynamic Yagi-Uda patch antenna (RDYPA) elements is proposed. The array element consists of one driven patch and some/no parasitic patches/patch. By adjusting the states of array elements, three array modes can be achieved. At each mode, the element has different parasitic patches. The phased array is investigated by simulation and measurement. The simulated scanning angle of the array can cover an elevation range from -72° to 64° by combining three modes and changing the excited phases of elements, with a maximum side lobe level (SLL) less than -7 dB and gain fluctuation less than 1 dB.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131014889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Near Neighbor Cheap JPDA IMM based on amplitude information 基于幅值信息的近邻廉价JPDA IMM
The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI: 10.1109/MMWCST.2012.6238188
Yao Liu, Wei Zhang, Ming-yan Chen
{"title":"Near Neighbor Cheap JPDA IMM based on amplitude information","authors":"Yao Liu, Wei Zhang, Ming-yan Chen","doi":"10.1109/MMWCST.2012.6238188","DOIUrl":"https://doi.org/10.1109/MMWCST.2012.6238188","url":null,"abstract":"A Near Neighbor Cheap JPDA (NNCJPDA) Interacting Multiple Model (IMM) algorithm based on amplitude information (AI) is proposed to improve the performance of multi-target tracking under conditions of low signal to noise ratio (SNR) or high false alarm rate. In this algorithm, the association likelihood of NNCJPDA is combined with the likelihood ratio of amplitude. Under conditions of low SNR or high false alarm rate, the amplitude information can be used to improve the accuracy of tracking and reduce the amount of computation. Simulation results demonstrate that the proposed algorithm improves the performance of target tracking and computational efficiency, and ensures the astringency of the system.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131016954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
GaN-based HEMT devices for power switching applications 用于功率开关应用的基于gan的HEMT器件
The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI: 10.1109/MMWCST.2012.6238191
M. Peng, Y. Zheng, X. J. Chen, X. Y. Liu
{"title":"GaN-based HEMT devices for power switching applications","authors":"M. Peng, Y. Zheng, X. J. Chen, X. Y. Liu","doi":"10.1109/MMWCST.2012.6238191","DOIUrl":"https://doi.org/10.1109/MMWCST.2012.6238191","url":null,"abstract":"GaN-based high electron mobility transistors (HEMTs) have successfully demonstrated unprecedented potential in microwave power electronics applications, featuring both high saturation current and high breakdown voltage. Especially, increasing the gate-drain distance is very beneficial to reduce the off-state leakage current for power switching devices. GaN HEMT devices with the gate-drain distance of 29μm have obtained very low off-state leakage current of 3.8μA at VDS=100V and reverse Schottky-gate leakage current of 2.93μA at VGD= -100V. After SiNx passivation, both leakage currents increase nearly one order of magnitude, which are 19.5μA and 14.34μA respectively. On the one hand, the SiNx dielectric layer decreases surface current leakage and suppresses the virtual-gate effect on the electric-field distribution. On the other hand, it increases the electric-field strength near the gate edge at the drain side, resulting in higher Schottky-gate leakage current. Anyway, GaN HEMT devices show a great potential to achieve breakdown voltage of several hundred volts. Further in combination with field-plate technique, the great reduction of peak electric field at gate edge is advantageous for highvoltage applications.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"366 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126956776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Doherty power amplifier with an improved π-type output network 一种改进π型输出网络的Doherty功率放大器
The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI: 10.1109/MMWCST.2012.6238106
J. Zha, Y. Luo, Q. Li, J. Liu
{"title":"A Doherty power amplifier with an improved π-type output network","authors":"J. Zha, Y. Luo, Q. Li, J. Liu","doi":"10.1109/MMWCST.2012.6238106","DOIUrl":"https://doi.org/10.1109/MMWCST.2012.6238106","url":null,"abstract":"In this paper, works are focused on the impact of output network on PAE (power-added-efficiency) performance of a Doherty circuit. A shunt capacitor π-network is put forward to improve the output network of Doherty amplifier, based on the equivalent quarter wavelength transmission line. The analysis for this amplifier is presented. A Doherty circuit with applying the improved output network is designed, fabricated and tested. The device used is MRF6S21050L LDMOS. The PAE tested of the Doherty circuit gets 2% improvement in the power backoff region. When ACLR is -30dBc, the corresponding output power measured is 43.5dBm and the drain efficiency measured is 45.75%. All these measured data show very good agreements with the simulated ones.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124275568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An AlGaN/GaN HEMT-based monolithic integrated X-band low noise amplifier 一种基于AlGaN/GaN hemt的单片集成x波段低噪声放大器
The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI: 10.1109/MMWCST.2012.6238209
Pang Lei, Chen Xiaojuan, L. Xinyu
{"title":"An AlGaN/GaN HEMT-based monolithic integrated X-band low noise amplifier","authors":"Pang Lei, Chen Xiaojuan, L. Xinyu","doi":"10.1109/MMWCST.2012.6238209","DOIUrl":"https://doi.org/10.1109/MMWCST.2012.6238209","url":null,"abstract":"Noise performance of AlGaN/GaN HEMT has received more and more worldwide attention in recent years. In this paper, a MMIC process in AlGaN/GaN technology has been developed. A LNA design is based on a AlGaN/GaN HEMT noise model and a complete model library of passive elements under the optimum bias for LNA design. The paper describes modeling, bias dependence of small-signal and noise parameters, circuit design of the LNA using noise model without transistor noise measurement, and demonstrates a NF of 2 dB at 8GHz.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"94 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122537158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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