一种基于AlGaN/GaN hemt的单片集成x波段低噪声放大器

The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI:10.1109/MMWCST.2012.6238209

Pang Lei, Chen Xiaojuan, L. Xinyu

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引用次数: 4

摘要

近年来，AlGaN/GaN HEMT的噪声性能越来越受到世界各国的关注。本文开发了AlGaN/GaN技术中的MMIC工艺。LNA设计基于AlGaN/GaN HEMT噪声模型和LNA设计最优偏置下的完整无源元件模型库。本文描述了LNA的建模、小信号和噪声参数的偏置依赖性、采用无晶体管噪声测量的噪声模型的电路设计，并演示了8GHz时的2db的NF。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An AlGaN/GaN HEMT-based monolithic integrated X-band low noise amplifier

Noise performance of AlGaN/GaN HEMT has received more and more worldwide attention in recent years. In this paper, a MMIC process in AlGaN/GaN technology has been developed. A LNA design is based on a AlGaN/GaN HEMT noise model and a complete model library of passive elements under the optimum bias for LNA design. The paper describes modeling, bias dependence of small-signal and noise parameters, circuit design of the LNA using noise model without transistor noise measurement, and demonstrates a NF of 2 dB at 8GHz.

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The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology

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