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2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems最新文献

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Study of effect of room window on through wall imaging in UWB range 超宽带范围内房间窗对穿壁成像影响的研究
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441085
A. Gaikwad, Dharmendra Singh, M. Nigam
{"title":"Study of effect of room window on through wall imaging in UWB range","authors":"A. Gaikwad, Dharmendra Singh, M. Nigam","doi":"10.1109/ELECTRO.2009.5441085","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441085","url":null,"abstract":"In through wall imaging (TWI), detection is possible due to dielectric contrasts between target and room environment. Complexity increases if room consists of furniture's and other objects beside desired target. Further detection of desired target becomes complex with the presence of window in back wall of room. Thus in this paper, effect of presence of window in back wall of room is investigated on detection and imaging. A detection technique is proposed in which signal processing technique is applied to extract the target information from clutter signal. A back projection imaging technique is applied to image the target. For this purpose, indigenously a TWI system based on step frequency continuous wave (SFCW) principle is developed in ultra wide band (UWB) range of frequency (i.e., 3.95 GHz to 5.85 GHz), plywood considered as wall and metallic plate is considered as target behind the plywood wall. The results are quite encouraging.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127764785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Si-based photodetectors in optical communication 光通信中硅基光电探测器
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441072
N. Das
{"title":"Si-based photodetectors in optical communication","authors":"N. Das","doi":"10.1109/ELECTRO.2009.5441072","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441072","url":null,"abstract":"Si-based photodetectors play key role in the performance of Si-photonic Devices. Design of high performance Si-detectors for optical communication system is a challenging task. Drawbacks arising from low absorption efficiency due to indirect nature of the band-gap in Si, strain in Ge/Si heterointerfaces, etc are to be overcome with suitable structure/design of the detectors. In this paper, a brief review is given on Si-detectors, such as Si-CMOS, SiGe and Ge-on-Si photodetectors including their fabrication techniques, performance trend with some aspects of modeling.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133155697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High speed LVDS driver for SERDES 高速LVDS驱动的SERDES
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441164
H. Gupta, R. Parmar, R. Dave
{"title":"High speed LVDS driver for SERDES","authors":"H. Gupta, R. Parmar, R. Dave","doi":"10.1109/ELECTRO.2009.5441164","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441164","url":null,"abstract":"Low Voltage Differential Signaling (LVDS) is a method used for high-speed transmission of binary data over copper cable. In the earlier remote sensing payload camera electronics, the multi-port parallel data were provided to spacecraft base-band system, requiring large number of I/O connectors and associated harnesses. This multi-port parallel data can be multiplexed, serialized and transmitted to other subsystems using LVDS interface thereby reducing the number of I/Os, cabling and associated weight of interface hardware. This work presents the design, simulation and analysis of I/O interface circuits for high speed operation which is fully compliant with the IEEE STD 1596.3 (LVDS). A common mode feedback (CMFB) circuitry is utilized in the LVDS transmitter to stabilize the common mode voltage in a pre-defined range. In most of the previous designs [1] output cells utilize voltage divider circuit composed of two large resistors (≈MΩ) between output pads and center is taped as feedback. These resistors may be off-chip discrete components (due to stringent stability and large die area requirement). The modified common mode feedback circuit has been designed and analyzed with appropriate transistor geometry and evaluated. Its performance is also compared with conventional CMFB design.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114464377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Study of singular phases in laser cavity modes 激光腔模式中奇异相位的研究
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441035
Sanjay Mishra, D. Mohan, A. K. Gupta, M. K. Mridha
{"title":"Study of singular phases in laser cavity modes","authors":"Sanjay Mishra, D. Mohan, A. K. Gupta, M. K. Mridha","doi":"10.1109/ELECTRO.2009.5441035","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441035","url":null,"abstract":"Study of singular phases is important for analyzing the wavefront deterioration of laser beams while propagating through strong atmospheric turbulence. Such study is useful to the applications involving the laser propagation and the phase detection systems. Few laser cavity modes inherently possess singular behavior. We report the study of detection of single and multiple phase singularities embedded in the fundamental laser mode. Numerically these vortices have been produced and two interferometric methods were used for the detection. Alternatively singularities could also be detected by measuring local slopes of wavefront employing Shack-Hartmann principle. Comparison of these methods was also discussed.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115157036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of high-k dielectrics and spacer layers on the elctrical performance of symmetrical double gate MOSFETs 高k介电体和间隔层对对称双栅mosfet电性能的影响
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441178
S. Bhattacherjee, A. Biswas
{"title":"Impact of high-k dielectrics and spacer layers on the elctrical performance of symmetrical double gate MOSFETs","authors":"S. Bhattacherjee, A. Biswas","doi":"10.1109/ELECTRO.2009.5441178","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441178","url":null,"abstract":"In this paper, analytical models for threshold voltage Vt and subthreshold slope S for symmetric double gate MOSFETs with high-k dielectrics are proposed. Analytical approaches for predicting Vt and S are developed by considering effects of fringing electric field, interface trap charge density and sidewall spacers. The proposed model has been employed to calculate Vt, S and drain induced barrier lowering (DIBL) of DG MOSFETs with different gate dielectrics for various values of effective oxide thickness (EOT). Also the effect of sidewall spacers on Vt has been predicted. Accuracy of models has been verified by comparing analytical results obtained from proposed models with the reported simulated data.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"697 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122985113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A textile antenna for WLAN applications 用于WLAN应用的纺织天线
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441084
S. Sankaralingam, B. Gupta
{"title":"A textile antenna for WLAN applications","authors":"S. Sankaralingam, B. Gupta","doi":"10.1109/ELECTRO.2009.5441084","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441084","url":null,"abstract":"A natural progression from the Personal Area Network (PAN) concept is the Body Area Network (BAN). A wearable antenna is an essential part of any Wireless BAN. A microstrip patch radiator is chosen as an example of low-profile wearable antenna, as it can be made conformal for integration into clothing. In this paper, a textile microstrip circular disk antenna for such body centered Wireless Local Area Network (WLAN) has been developed and tested. The conductive combined cotton (65∶35) fabric has been chosen as its substrate material. Thus the suitability of fabric substrate materials for the development of microstrip patch antennas is well demonstrated.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"32 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114081524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
A novel approach for RFID based fire protection 一种基于RFID的消防新方法
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441139
Sudip Dogra, S. Manna, Aritra Banik, S. Maiti, S. Sarkar
{"title":"A novel approach for RFID based fire protection","authors":"Sudip Dogra, S. Manna, Aritra Banik, S. Maiti, S. Sarkar","doi":"10.1109/ELECTRO.2009.5441139","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441139","url":null,"abstract":"Every year lot of properties and lives are lost in fires. When the firefighters start extinguishing fires, they have to enter the fire affected region, but the main problem is that in most cases the firefighters don't have an overall knowledge of inside scenario of progress of fire. Sometime it can lead to death of firemen. As for example nationwide, of the roughly 100 firefighters who die on duty each year, a quarter loses their lives in fires, according to the U.S. fire administration [1].Nearly half the deaths are the result of heart attacks or other health-related problems. So, when a firefighter loses his life in the line of duty, it is a reminder of the complexity and peril of the profession, despite a dedication to improved equipment and training in recent years. So, if the firefighters have a prior knowledge about the nature of progress of fire within the building/premises, they can plan their action and movement accordingly. In this paper we have proposed a scheme for planning of fire fighting that will help the firefighters to extinguish the fire more effectively.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123895982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A comparative study of surface quantization effects in Si and strained-Si MOS structures with ultrathin gate oxides 超薄栅极氧化物对Si和应变Si MOS结构表面量化效应的比较研究
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441175
M. Dey, S. Chattopadhyay
{"title":"A comparative study of surface quantization effects in Si and strained-Si MOS structures with ultrathin gate oxides","authors":"M. Dey, S. Chattopadhyay","doi":"10.1109/ELECTRO.2009.5441175","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441175","url":null,"abstract":"In this paper, a comparative study has been performed on the locations of charge centroid and quantized carrier distributions for conventional and strained-Si MOS capacitors. The induced channel strain has been observed to modify surface quantization effect significantly. The position of charge centroid and the relevant carrier distribution have been studied for the variation of gate dielectric layer thickness, substrate doping concentration, and induced strain in the epitaxial layer. Position of charge centroid and peak carrier density modifies the measured oxide thickness, leading to the extraction of erroneous device parametric values. Therefore, a correction factor for the measured thickness of ultra thin gate dielectric layer has also been developed for the MOS capacitors with quantized surface.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"322 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128548997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Focusing property simulation of tapered-cladding single-mode hemispherical fiber micro-lenses 锥形包层单模半球面光纤微透镜聚焦特性仿真
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441045
Xiaoguang Gao, Shuping Li, Jingping Zhu, Yuzhou Sun, T. Tang
{"title":"Focusing property simulation of tapered-cladding single-mode hemispherical fiber micro-lenses","authors":"Xiaoguang Gao, Shuping Li, Jingping Zhu, Yuzhou Sun, T. Tang","doi":"10.1109/ELECTRO.2009.5441045","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441045","url":null,"abstract":"The properties of tapered-cladding single-mode hemispherical fiber micro-lenses whose radius is larger than twice of the core radius of the fiber are investigated by Monte Carlo simulation. The radial field distribution of the fiber is expressed as a Gaussian distribution. Simulation results show that the least confusion spots and the maximum axial intensity spots are not located at the focal plane of the hemispherical micro-lenses. The influence of the spherical aberration of the lenses on the spot size can not be neglected for micro-lenses with small curvature radius, and the Gaussian beam model typically used in the calculation of fiber micro-lenses is valid only when the radius of the refractive surface is larger than triple of the fiber core radius.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122013798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of variation of topological changes on the Equivalent Circuit Parameters of pseudomorphic HEMTs 拓扑变化对伪晶hemt等效电路参数的影响
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441171
B. N. Kumar, Gaurav Srivastava, A. Verma, K. M. Bhat, S. Chaturvedi, G. Saravanan, R. Muralidharan
{"title":"Effect of variation of topological changes on the Equivalent Circuit Parameters of pseudomorphic HEMTs","authors":"B. N. Kumar, Gaurav Srivastava, A. Verma, K. M. Bhat, S. Chaturvedi, G. Saravanan, R. Muralidharan","doi":"10.1109/ELECTRO.2009.5441171","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441171","url":null,"abstract":"This paper describes the study of effect of variation of topological changes on parameters of pseudomorphic HEMTs. Devices with 2 gate fingers, having gate width of 150 µm, source-drain spacing of 4 µm and 3 µm, and with two different gate structures, viz., π and T types were fabricated. On-wafer measurement of S-parameters for different devices was done from 100 MHz to 40 GHz under different bias conditions. Using this data, all the Equivalent Circuit Parameters (ECPs) were then extracted for each device. This method was then used for the calculation of the ECPs of 4 µm and 3 µm spacings, and trends of various parameters were analyzed.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116126400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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