发布求助
文献互助 智能选刊 最新文献

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems最新文献

筛选
英文 中文
Modeling and numerical simulation of gate leakage current in strained-Si channel nMOSFETs with highk gate dielectrics 高栅介质应变硅沟道nmosfet栅漏电流的建模与数值模拟
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441181
Srirupa Goswami, A. Biswas
{"title":"Modeling and numerical simulation of gate leakage current in strained-Si channel nMOSFETs with highk gate dielectrics","authors":"Srirupa Goswami, A. Biswas","doi":"10.1109/ELECTRO.2009.5441181","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441181","url":null,"abstract":"The influence of strain on the gate leakage current has been investigated analytically in detail for strained-Si channel MOSFETs for a range of gate voltages and the gate insulator thicknesses. Our analysis relies on the determination of surface potential by solving the Poisson's equation using both the analytical and numerical approaches. The analytical model for the gate leakage current density has been proposed by considering strain dependent material and transport parameters and also band parameters. The different components of the gate leakage current densities such as the Fowler-Nordheim (F-N) and direct leakage current densities along with their sub components have been determined analytically for a wide range of strain values. Further the validity of our model has been confirmed by comparing our theoretical results for the gate leakage current density with the reported experimental data.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127190529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fiber Bragg Grating sensor packages for sensing water pressures inside ocean 传感海洋内水压的光纤布拉格光栅传感器组件
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441044
A. G. Guru Prasad, B. Abhishek, S. Asokan
{"title":"Fiber Bragg Grating sensor packages for sensing water pressures inside ocean","authors":"A. G. Guru Prasad, B. Abhishek, S. Asokan","doi":"10.1109/ELECTRO.2009.5441044","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441044","url":null,"abstract":"This paper discusses the design and development of newer packaging schemes for Fiber Bragg Gratings (FBGs) for sensing water pressures inside ocean. The FBGs used in this work have been fabricated using the phase mask technique, in a photosensitive germano silicate optical fiber using a 248nm UV light. The wavelength shifts (ΔλB) in the reflected light from the FBG, resulting from the strain/pressure imparted on the FBGs have been recorded using a high speed Micron-optics FBG interrogation system. Further, an experimental set up has been fabricated to test the efficiency and characteristics of different sensor packages developed. The results obtained indicate that the packages are of good sensitivity, rugged and can be customized depending on the requirement of the application.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127302778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improved CAD formulae to calculate the input impedance of an equilateral triangular microstrip patch including radome effect 改进了包括天线罩效应在内的等边三角形微带贴片输入阻抗的CAD计算公式
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441112
M. Biswas, A. Mandal
{"title":"Improved CAD formulae to calculate the input impedance of an equilateral triangular microstrip patch including radome effect","authors":"M. Biswas, A. Mandal","doi":"10.1109/ELECTRO.2009.5441112","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441112","url":null,"abstract":"A very simple CAD formulae based on cavity model analysis is used to compute the input impedance of an Equilateral Triangular Microstrip Patch Antenna (ETMPA) for wide range of variations of superstrate parameters .The computed values are compared with theoretical and experimental values available in open literature. A simulation software (CFDTD) is also used to validate our model.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130143704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A very high efficient input shared buffered packet switch for broadband wireless communications 一个非常高效的宽带无线通信输入共享缓冲分组交换机
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441131
K. L. Baishnab, A. Nag
{"title":"A very high efficient input shared buffered packet switch for broadband wireless communications","authors":"K. L. Baishnab, A. Nag","doi":"10.1109/ELECTRO.2009.5441131","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441131","url":null,"abstract":"The design of a high speed packet switch has been described here. The switch having 4 inputs and 4 outputs (4×4) each of four inputs is further subdivided into additional four input queues. The proposed designed have considered both restricted sharing as well as complete sharing. In restricted sharing a finite threshold is imposed to all queue's length. However on unrestricted sharing one queue can occupy, the free space of others queue under certain conditions and invite starvation for those other queues. Under the restricted sharing we have used different algorithms like fixed threshold, Push-out the delayed packet and dynamic threshold under different loads and buffer's size, delay. The simulation results show that a variety of outcomes based on load, buffer size, and delay","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130568141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gas sensor using polymer films 使用聚合物薄膜的气体传感器
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441137
Anjula
{"title":"Gas sensor using polymer films","authors":"Anjula","doi":"10.1109/ELECTRO.2009.5441137","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441137","url":null,"abstract":"The gas sensors fabricated using conducting polymers such as Polythiopene (PTh) as the active layers have been studied here. This paper discusses the preparation of the gas sensor using various method and the measurement and result of gas sensor behaviour. The factors that affect the performances of the gas sensors are also addressed. The advantage and disadvantages of the sensors and a brief prospect in this research field are discussed at the end of the paper.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"62 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131022853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation characteristics of rectangular patch antenna using air substrates 空气基板矩形贴片天线的辐射特性
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441099
C. Chandan, A. Ghosh, S. Ghosh, S. Chattopadhyay
{"title":"Radiation characteristics of rectangular patch antenna using air substrates","authors":"C. Chandan, A. Ghosh, S. Ghosh, S. Chattopadhyay","doi":"10.1109/ELECTRO.2009.5441099","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441099","url":null,"abstract":"A rectangular microstrip patch on air substrate is theoretically and experimentally demonstrated and compared with conventional microstrip patch. Compared to conventional one, these show improved radiation performance. Around 2–3 dB improvement of peak gain observed.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126821788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Wavelet and energy based approach for PVC detection 基于小波和能量的PVC检测方法
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441123
Awadhesh Pachauri, M. Bhuyan
{"title":"Wavelet and energy based approach for PVC detection","authors":"Awadhesh Pachauri, M. Bhuyan","doi":"10.1109/ELECTRO.2009.5441123","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441123","url":null,"abstract":"This paper describes a wavelet and energy based technique for the detection of ventricular premature arrhythmic beats in Electrocardiogram (ECG) that are of great importance in evaluating and predicting life threatening ventricular arrhythmias. Premature Ventricular Contraction (PVC) can be seen in ECG as abnormal wave shape of the QRS complex. A new scheme is proposed for the detection of premature ventricular beats, which is a vital function in rhythm monitoring of cardiac patients. The method for classifying the abnormal complexes from the normal ones is based on the concepts of RR-interval of detected R peaks and energy analysis of ECG signal. ECG R-peaks have been detected by wavelet method in which ECG signal has been decomposed to the required level by selected wavelet and the selected detail coefficient d4 by energy, frequency and correlation analysis undergoes thresholding and decision logic to detect R-peaks. An RR-interval window is placed between the two successive R-peaks when the RR-interval exceeds beyond a predefined threshold. Furthermore, window based energy analysis of ECG signal is performed by eliminating the low frequency samples and a higher energy window beyond a predefined threshold is analyzed. An intersection of these two windows gives rise actual number and positions of PVCs in the ECG signal.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121294484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A novel method for modeling semiconductor by neuro space mapping 基于神经空间映射的半导体建模新方法
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441153
M. G. Armaki, Mohamad Kazem Anvarifard, S. E. Hosseini
{"title":"A novel method for modeling semiconductor by neuro space mapping","authors":"M. G. Armaki, Mohamad Kazem Anvarifard, S. E. Hosseini","doi":"10.1109/ELECTRO.2009.5441153","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441153","url":null,"abstract":"The drift-diffusion (DD) model is not accurate for simulation of submicrometer semiconductor devices. Using RBF NN, a neuro space mapping is proposed to DD model parameters. The DD model with mapped parameters can produce accurate simulation results of the hydrodynamic model. Simulations of a n-i-n diode confirm the ability of the proposed method for submicron device simulation.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126100469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrafast switching property in one dimensional defect photonic crystals 一维缺陷光子晶体的超快开关特性
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441055
K. Thapa, R. Pandey, P. Pandey, S. P. Ojha
{"title":"Ultrafast switching property in one dimensional defect photonic crystals","authors":"K. Thapa, R. Pandey, P. Pandey, S. P. Ojha","doi":"10.1109/ELECTRO.2009.5441055","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441055","url":null,"abstract":"We present the ultrafast switching property in one dimensional defect photonic crystals theoretically, owing the mechanism of transmittance. By analyzing the transmittance of electromagnetic waves through the defect photonic crystal with the help of simple transfer matrix method, it is found that the defect layer in the photonic crystal can be induced the localized modes in the form of sharp transmission peak inside the photonic band gap. The number of transmission peaks can be tuned by changing the thickness of the defect layers.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126599283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development and cold testing of vacuum RF window for C band 250 kW CW power klystron C波段250kw连续波速调管真空射频窗的研制及冷态试验
2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI: 10.1109/ELECTRO.2009.5441074
O. S. Lamba, M. Kaushik, Sushil Kumar, V. Jindal, Vijay Singh, Shilpam Ratan, D. Pal, D. Kant, L. M. Joshi
{"title":"Development and cold testing of vacuum RF window for C band 250 kW CW power klystron","authors":"O. S. Lamba, M. Kaushik, Sushil Kumar, V. Jindal, Vijay Singh, Shilpam Ratan, D. Pal, D. Kant, L. M. Joshi","doi":"10.1109/ELECTRO.2009.5441074","DOIUrl":"https://doi.org/10.1109/ELECTRO.2009.5441074","url":null,"abstract":"The paper deals with the design fabrication and cold testing of vacuum RF window for C-band 250 kW CW power klystron. The simulation of the window has been carried out using the CST microwave studio software. The proposed window is designed for 5 GHz operating frequency for handling 250 kW of RF power. In the proposed window geometry, metallized alumina disc (99.5 % purity) of diameter 56 mm and thickness 1.5 mm is brazed in a cylindrical waveguide of diameter 56 mm. The cylindrical waveguide is terminated to WR 187 waveguide at its both ends. The return loss and insertion loss of the above mentioned window has been found to be −48 dB and 0.05 dB respectively which are well matched with experimental values. The bandwidth of 170 MHz was achieved. The window performance has been found satisfactory for microwave transmission.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121533847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信