基于神经空间映射的半导体建模新方法

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI:10.1109/ELECTRO.2009.5441153

M. G. Armaki, Mohamad Kazem Anvarifard, S. E. Hosseini

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引用次数: 0

摘要

漂移-扩散(DD)模型对于亚微米半导体器件的模拟是不准确的。利用RBF神经网络，提出了一种DD模型参数的神经空间映射。带参数映射的DD模型可以得到精确的水动力模型仿真结果。对n-i-n二极管的仿真验证了该方法在亚微米器件仿真中的可行性。

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A novel method for modeling semiconductor by neuro space mapping

The drift-diffusion (DD) model is not accurate for simulation of submicrometer semiconductor devices. Using RBF NN, a neuro space mapping is proposed to DD model parameters. The DD model with mapped parameters can produce accurate simulation results of the hydrodynamic model. Simulations of a n-i-n diode confirm the ability of the proposed method for submicron device simulation.

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2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems

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