Si-based photodetectors in optical communication

N. Das
{"title":"Si-based photodetectors in optical communication","authors":"N. Das","doi":"10.1109/ELECTRO.2009.5441072","DOIUrl":null,"url":null,"abstract":"Si-based photodetectors play key role in the performance of Si-photonic Devices. Design of high performance Si-detectors for optical communication system is a challenging task. Drawbacks arising from low absorption efficiency due to indirect nature of the band-gap in Si, strain in Ge/Si heterointerfaces, etc are to be overcome with suitable structure/design of the detectors. In this paper, a brief review is given on Si-detectors, such as Si-CMOS, SiGe and Ge-on-Si photodetectors including their fabrication techniques, performance trend with some aspects of modeling.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELECTRO.2009.5441072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Si-based photodetectors play key role in the performance of Si-photonic Devices. Design of high performance Si-detectors for optical communication system is a challenging task. Drawbacks arising from low absorption efficiency due to indirect nature of the band-gap in Si, strain in Ge/Si heterointerfaces, etc are to be overcome with suitable structure/design of the detectors. In this paper, a brief review is given on Si-detectors, such as Si-CMOS, SiGe and Ge-on-Si photodetectors including their fabrication techniques, performance trend with some aspects of modeling.
光通信中硅基光电探测器
硅基光电探测器对硅光子器件的性能起着至关重要的作用。设计用于光通信系统的高性能硅探测器是一项具有挑战性的任务。由于Si带隙的间接性质、Ge/Si异质界面的应变等导致的吸收效率低的缺点,可以通过适当的探测器结构/设计来克服。本文简要介绍了硅- cmos、SiGe和锗-硅光电探测器的制备技术、性能发展趋势和建模等方面的研究进展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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