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Difficulties in characterizing transient thermal resistance of SiC MOSFETs SiC mosfet瞬态热阻表征的难点
2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2016-09-01 DOI: 10.1109/THERMINIC.2016.7749042
T. Funaki, Shuhei Fukunaga
{"title":"Difficulties in characterizing transient thermal resistance of SiC MOSFETs","authors":"T. Funaki, Shuhei Fukunaga","doi":"10.1109/THERMINIC.2016.7749042","DOIUrl":"https://doi.org/10.1109/THERMINIC.2016.7749042","url":null,"abstract":"Thermal design is important for safety and reliable operation of power electronics system to cope with emerging loss accompanied by power conversion operation. This paper point outs the difficulties in evaluating transient thermal resistance of power module with SiC MOSFET. The static mode thermal test method to extract structure function of power device utilises K factor of power device to estimate junction temperature. The knee voltage of body diode and threshold gate voltage are utilized as K factor for MOSFET. The estimated junction temperature of SiC MOSFET through the use of K factor gives inappropriate temperature behaviour especially at the onset of thermal test measurement. The anomalous results are observed for different measurement setup type for MOSFET. The dynamic instability of threshold gate voltage occurring in SiC MOSFET violates the estimation of junction temperature with K factor. The larger temperature variation for measurement is effective in mitigating temperature estimation error.","PeriodicalId":143150,"journal":{"name":"2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130485308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Characterization of thermal interface materials for IGBT inverter applications 用于IGBT逆变器的热界面材料的特性
2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2016-09-01 DOI: 10.1109/THERMINIC.2016.7749041
X. Jordà, X. Perpiñà, M. Vellvehí, Manuel Fernández, S. Llorente, S. Aranda
{"title":"Characterization of thermal interface materials for IGBT inverter applications","authors":"X. Jordà, X. Perpiñà, M. Vellvehí, Manuel Fernández, S. Llorente, S. Aranda","doi":"10.1109/THERMINIC.2016.7749041","DOIUrl":"https://doi.org/10.1109/THERMINIC.2016.7749041","url":null,"abstract":"Power electronics applications require an accurate thermal management design. In this sense, one of the most important elements are thermal interface materials (TIMs) placed between the power devices and heatsinks in order to provide good thermal contact and (eventually) electrical isolation. To predict accurate thermal performances of the final assemblies, direct thermal tests are practically unavoidable, as the final thermal behaviour of TIMs depends on many parameters, such as mounting pressure, surface roughness, etc. and datasheets are often incomplete. Such thermal tests could be complex in final industrial systems and for this reason we propose a simple TIM evaluation setup for predicting the final thermal behaviour of IGBT-based inverters using such materials. The results obtained from two thermal pad TIMs and silicone grease are compared showing a good agreement with those obtained in test vehicles using functional IGBTs.","PeriodicalId":143150,"journal":{"name":"2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128623963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Electro-thermal simulation for high power IGBTs for automotive applications 汽车用大功率igbt的电热模拟
2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2016-09-01 DOI: 10.1109/THERMINIC.2016.7748648
A. Kempitiya, Wibawa Chou
{"title":"Electro-thermal simulation for high power IGBTs for automotive applications","authors":"A. Kempitiya, Wibawa Chou","doi":"10.1109/THERMINIC.2016.7748648","DOIUrl":"https://doi.org/10.1109/THERMINIC.2016.7748648","url":null,"abstract":"Safe and reliable operation of power electronics in a particular application hinges on the accurate design of thermal management systems that perform the task of heat removal from the devices. This requirement reaches paramount importance for IGBTs and Diodes used in high power automotive applications where ambient temperatures under the hood exceed 65°C. This work demonstrates in-depth system analysis via developed electro-thermal models that take into account both semiconductor losses and the overall system thermal stack-up. This knowledge not only allows design engineers to ensure proper operation of the device in a particular application but also evaluate the reliability of the silicon, bondwires and thermal interfaces of the package due to thermal stresses induced over various worst case converter operating conditions.","PeriodicalId":143150,"journal":{"name":"2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124609866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Effect of flow and geometry parameters on performance of solar air heater 流动和几何参数对太阳能空气加热器性能的影响
2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2016-09-01 DOI: 10.1109/THERMINIC.2016.7749075
R. S. Maurya, A. J. Ansari Zaid
{"title":"Effect of flow and geometry parameters on performance of solar air heater","authors":"R. S. Maurya, A. J. Ansari Zaid","doi":"10.1109/THERMINIC.2016.7749075","DOIUrl":"https://doi.org/10.1109/THERMINIC.2016.7749075","url":null,"abstract":"Present paper deals with numerical investigation of solar air heater of a specific configuration where different geometrical parameters influencing its performance, is varied and its impact is assessed. The climatic conditions of Jeddah (lat. 21° 42' N, 39° 11'E), Saudi Arabia is considered for investigation. The numerical investigation is carried out using commercial CFD software i.e. ANSYS Fluent, as a tool of analysis. The effect of air mass flow rate, various selective coatings on the absorber plate, number of covers, spacing between the covers on the flowing air outlet temperature (Tfo) and the heater instantaneous efficiency (ηinst) are studied. The study also includes the effect of fins kept in the flow passage of heater. Investigation concludes that a better performance is expected using cobalt oxide (Co-O) as a selective coating material with a daily average of the instantaneous efficiency of about 56%. To ensure the correctness of numerical model the simulated result is validated with the analytical result that had been performed for the heater with a black painted absorber plate under the same climatic conditions.","PeriodicalId":143150,"journal":{"name":"2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128967220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Collapse of a liquid solder bump under load1 负载1下的液态焊料凸点坍塌
2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2016-09-01 DOI: 10.1109/THERMINIC.2016.7748644
C. van Veen, W. Luiten
{"title":"Collapse of a liquid solder bump under load1","authors":"C. van Veen, W. Luiten","doi":"10.1109/THERMINIC.2016.7748644","DOIUrl":"https://doi.org/10.1109/THERMINIC.2016.7748644","url":null,"abstract":"In this work the collapse of a solder bump as a result of the weight load of a chip or a package is analysed. A new expression is derived for the opposing bump force that carries the load. Its validity is checked on known solutions. Calculated spring constant and hydrostatic pressure are compared between the new force based approach and the more conventional approach based on increase of free surface. It is shown that for a spheroid bump shape, the results are qualitatively similar but not quantitatively the same. It turns out that the spheroid bump shape does not fully satisfy the Young Laplace (YLP) equation. The new force expression is used to develop an alternative bump shape which satisfies the YLP equation better. It is expected that the new force expression and the new alternative collapsed contour will contribute to better reliability assessment of solder bump interconnects.","PeriodicalId":143150,"journal":{"name":"2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127579356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modelling of the thermoelectrical performance of devices based on VO2 基于VO2的器件热电性能建模
2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2016-09-01 DOI: 10.1109/THERMINIC.2016.7749072
S. Ur, J. Mizsei, L. Pohl
{"title":"Modelling of the thermoelectrical performance of devices based on VO2","authors":"S. Ur, J. Mizsei, L. Pohl","doi":"10.1109/THERMINIC.2016.7749072","DOIUrl":"https://doi.org/10.1109/THERMINIC.2016.7749072","url":null,"abstract":"By reaching the limits of conventional silicon-based integrated circuits, more and more effort is done to develop new devices for integrated circuits. A promising structure is based on the semiconductor-to-metal phase change of vanadium-dioxide at about 67°C. In these circuits the information is carried by combined thermal and electrical currents. Thermal effects cannot be separated so well in thermal-electronic circuits as electrical effects in electronic circuits thus, accurate distributed electrothermal simulation is mandatory. This paper presents three VO2 material models, the algorithmic extension of an electrothermal field simulator to be able to handle the hysteresis of VO2 and the modelling of VO2 based devices. The paper compares measured and simulated device characteristics.","PeriodicalId":143150,"journal":{"name":"2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125839209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
DPL thermal model of test microchip structure without cavity dedicated to estimation of nanoelectronic circuits thermal properties 无空腔测试微芯片结构的DPL热模型，用于纳米电子电路热性能的估计
2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2016-09-01 DOI: 10.1109/THERMINIC.2016.7749039
T. Raszkowski, M. Zubert, A. Samson, M. Janicki, A. Napieralski
{"title":"DPL thermal model of test microchip structure without cavity dedicated to estimation of nanoelectronic circuits thermal properties","authors":"T. Raszkowski, M. Zubert, A. Samson, M. Janicki, A. Napieralski","doi":"10.1109/THERMINIC.2016.7749039","DOIUrl":"https://doi.org/10.1109/THERMINIC.2016.7749039","url":null,"abstract":"This paper presents the comparison of the temperature distribution in the test structure chip obtained using Fourier-Kirchhoff and Dual-Phase-Lag heat transfer models. The investigated test structure consisting of two polysilicon resistors used as the heater and thermometer, which are located inside the silicon dioxide layer. The simulation results are compared with those which have been received using similar test structure containing two platinum resistors. Some numerical problems observed during the simulation of Dual-Phase-Lag heat transfer model have been also briefly presented.","PeriodicalId":143150,"journal":{"name":"2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130389869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Novel test stand for thermal diffusivity measurement of bulk and thin films 新型体膜和薄膜热扩散系数测量试验台
2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2016-09-01 DOI: 10.1109/THERMINIC.2016.7749059
M. A. Ras, D. May, B. Wunderle
{"title":"Novel test stand for thermal diffusivity measurement of bulk and thin films","authors":"M. A. Ras, D. May, B. Wunderle","doi":"10.1109/THERMINIC.2016.7749059","DOIUrl":"https://doi.org/10.1109/THERMINIC.2016.7749059","url":null,"abstract":"This paper deals with the development of a new test stand for thermal diffusivity measurement based on Ångström's method (called TIMAwave™). The concept of the test stand has been proved by FE simulation and experiments on standard samples. The test stand has been realized and integrated into the hardware of the already existing test stand LaTIMA™, which was developed for the measurement of thermal conductivity of highly conductive materials. The combination of these two test stands in one device is a great advantage, since the diffusivity and the conductivity of a sample can be measured at one specimen in one device. The results allow the calculation of the specific heat capacity or the density of the sample. Several materials have been characterized by using the new test stand. Some selected results will be discussed in this paper.","PeriodicalId":143150,"journal":{"name":"2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"12 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123681133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Smaller size and higher reliability for vertical chip mounted type power device 立式贴片式功率器件体积更小，可靠性更高
2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2016-09-01 DOI: 10.1109/THERMINIC.2016.7748647
Naoki Yamanari, T. Ohbu, Hiroaki Ito, S. Matsuyama
{"title":"Smaller size and higher reliability for vertical chip mounted type power device","authors":"Naoki Yamanari, T. Ohbu, Hiroaki Ito, S. Matsuyama","doi":"10.1109/THERMINIC.2016.7748647","DOIUrl":"https://doi.org/10.1109/THERMINIC.2016.7748647","url":null,"abstract":"This paper presents a new structure of the power device to reduce the size and improve the reliability. Our conventional device with vertical chip mounting is half size of the former device and we proposed a new one for further miniaturization and higher reliability. The proposed device with top and bottom surfaces cooling which allows higher power density is 30% smaller than our conventional one with only the bottom surface cooling. Also, to evaluate the reliability, the finite element analysis (FEA) of the thermal stress and the power cycle tests which are commonly used in evaluating the reliability were performed. The thermal stress of the proposed device can be reduced by 40%, and the power cycle test results showed the high reliability.","PeriodicalId":143150,"journal":{"name":"2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123197832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Cost-efficient in-situ end-of-life prognostics of power dies and LEDs by junction temperature measurement 通过结温测量，成本效益高的电源芯片和led寿命终止预测
2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2016-09-01 DOI: 10.1109/THERMINIC.2016.7749068
S. Sheva, R. Mrossko, J. Heilmann, B. Wunderle, G. Hantos, S. Noijen, J. Keller
{"title":"Cost-efficient in-situ end-of-life prognostics of power dies and LEDs by junction temperature measurement","authors":"S. Sheva, R. Mrossko, J. Heilmann, B. Wunderle, G. Hantos, S. Noijen, J. Keller","doi":"10.1109/THERMINIC.2016.7749068","DOIUrl":"https://doi.org/10.1109/THERMINIC.2016.7749068","url":null,"abstract":"Lifetime (or health) monitoring in modern power electronics & luminaries continuously gains in importance, especially if safety-relevant applications are in the focus. Moreover, technology development of such devices requires fast and if possible continuous assessment of structural integrity. This work proposes a simplification of transient thermal testing (TTA) of LEDs by condensing measurement data analysis into one characteristic value to be stored and compared to successive or previous measurements for damage evaluation. Our custom-built in-situ monitoring system is based on microcontroller (uC) functionalities and can be used as stand-alone solution for reliability testing without any other electronic equipment. For quantitative assessment of measurement system performance we used Luxeon Z LEDs with different thermal interface materials. Pre-calibrated samples were inspected for structural integrity before and after cycling tests by X-Ray inspection. Measurement concept as detection for failure at thermal interface or die attach was qualitatively proven by correlation with structure function evaluation.","PeriodicalId":143150,"journal":{"name":"2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"384 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132744361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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