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2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers最新文献

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High-Q CMOS-compatible micromachined edge-suspended spiral inductors 高q cmos兼容微加工边缘悬浮螺旋电感
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320590
W. Hon, Jinwen Zhang, L. Leung, K.J. Chen
{"title":"High-Q CMOS-compatible micromachined edge-suspended spiral inductors","authors":"W. Hon, Jinwen Zhang, L. Leung, K.J. Chen","doi":"10.1109/RFIC.2004.1320590","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320590","url":null,"abstract":"This paper reports a new category of high-Q edge-suspended inductors (ESI) that are realized using CMOS-compatible micromachining techniques. This structure was designed based on the concept that the current was crowded at the edges of the conducting metal wires at high frequencies due to the proximity effect. Since the coupling to the low resistivity silicon substrate is dominated by the current carrying parts (the edges), the substrate coupling and loss can be effectively suppressed by removing the silicon around and underneath the edges of the signal lines. Different from the conventional air-suspended inductors that have the inductors built on membrane or totally suspended in the air, the edge-suspended structures have the silicon underneath the center of the metal lines as the strong mechanical supports. The edge-suspension structures are fabricated using a combination of deep dry etching and anisotropic wet etching techniques that are compatible with CMOS process. For a three-turn 4.5-nH inductor, a 70% increase (from 6.8 to 11.7) in maximum Q-factor, a 57% increase (from 9.1 GHz to 14.3 GHz) in self-resonance frequency are obtained with a 11 /spl mu/m suspended edge in 25 /spl mu/m wide lines.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132091099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiGe HBT scaling implications on 1/f noise and oscillator phase noise SiGe HBT缩放对1/f噪声和振荡器相位噪声的影响
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320602
G. Niu, Jin Tang, Zhiming Feng, A. Joseph, D. Harame
{"title":"SiGe HBT scaling implications on 1/f noise and oscillator phase noise","authors":"G. Niu, Jin Tang, Zhiming Feng, A. Joseph, D. Harame","doi":"10.1109/RFIC.2004.1320602","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320602","url":null,"abstract":"An important concern in RF design is oscillator phase noise. Transistor 1/f noise, base resistance thermal noise, and the base and collector current shot noise, as well as inductor thermal noise can all contribute to oscillator phase noise. This work examines the implications of SiGe HBT scaling on 1/f noise and oscillator phase noise using experimental data from SiGe HBTs, featuring 50 and 120 GHz peak f/sub T/. The relevant importance of individual transistor noise sources in determining phase noise is examined. With scaling, the far-off phase noise improves due to overall base resistance reduction, making 1/f noise an increasingly important concern for synthesizer phase noise. We show that once the 1/f noise level is below a certain threshold, further reduction of 1/f noise is not necessary for frequency synthesizers. A method of determining this 1/f noise threshold is developed, and demonstrated for the SiGe HBTs used.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130827822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
RF SiP: the next wave for wireless system integration 射频SiP:无线系统集成的下一波浪潮
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320581
A. Smolders, N. Pulsford, P. Philippe, F. van Straten
{"title":"RF SiP: the next wave for wireless system integration","authors":"A. Smolders, N. Pulsford, P. Philippe, F. van Straten","doi":"10.1109/RFIC.2004.1320581","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320581","url":null,"abstract":"This paper discusses the opportunities of the system-in-package (SiP) concept for integrating complete wireless systems into a single package, providing the smallest size and lowest cost in the end application. SiPs offer the flexibility to use the optimal technology mixture for a particular wireless system. Two SiP approaches are introduced. The first approach is based on a low-cost laminate platform (LAMP) and the second approach uses a thin-film passive integration IC technology. In both approaches, multiple active dies (CMOS, BiCMOS, GaAs, etc.) can be placed on the passive substrate using either conventional wire-bonding technology or more advanced flip-chip technology. Two examples are described in the wireless connectivity area, i.e. a Bluetooth radio SiP and a complete WLAN 802.11b system SiP.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126411239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
A. 5-GHz high-linear SiGe HBT up-converter with on-chip output balun A.带片上输出平衡的5ghz高线性SiGe HBT上变频器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320678
A. Italia, E. Ragonese, L. La Paglia, G. Palmisano
{"title":"A. 5-GHz high-linear SiGe HBT up-converter with on-chip output balun","authors":"A. Italia, E. Ragonese, L. La Paglia, G. Palmisano","doi":"10.1109/RFIC.2004.1320678","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320678","url":null,"abstract":"This paper presents a high-linearity monolithic up-converter for 5-GHz wireless LAN applications. The circuit, implemented in a 40-GHz-f/sub T/ SiGe HBT technology, includes a variable-gain amplifier (VGA) and a double balanced mixer. By using an integrated balun at the RF output, the up-converter guarantees an output 1-dB compression point (OCP1) of 4 dBm, while drawing a quiescent current as low as 34 mA from a 3-V power supply. A power gain of 11 dB is also achieved. Moreover, a digital control is included, providing a linear-in-dB gain characteristic with a 45-dB power gain range.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121433918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A novel Q-enhanced LC switched-capacitor bandpass filter for digital wireless RF applications 一种用于数字无线射频应用的新型q增强LC开关电容带通滤波器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320707
A. El Oualkadi, J. Paillot, H. Guegnaud, R. Allam
{"title":"A novel Q-enhanced LC switched-capacitor bandpass filter for digital wireless RF applications","authors":"A. El Oualkadi, J. Paillot, H. Guegnaud, R. Allam","doi":"10.1109/RFIC.2004.1320707","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320707","url":null,"abstract":"In this paper, a novel architecture for a high-Q switched-capacitor bandpass filter, in 0.35 /spl mu/m CMOS, is presented and tested. The proposed architecture allows high selectivity tuning over a broad band in the radiofrequency range. This circuit is intended to replace surface acoustic wave (SAW) filters; it can be employed in the field of low-cost wireless communications as a subset for professional mobile phones [380-520 MHz]. Experimental results obtained from a prototype show a tunable center frequency range of 268 MHz [240-508 MHz], with quality factors up to 300.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121598771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A novel DP4T antenna switch for dual-band WLAN applications 一种用于双频WLAN应用的新型DP4T天线开关
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320685
Chang-Ho Lee, B. Banerjee, J. Laskar
{"title":"A novel DP4T antenna switch for dual-band WLAN applications","authors":"Chang-Ho Lee, B. Banerjee, J. Laskar","doi":"10.1109/RFIC.2004.1320685","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320685","url":null,"abstract":"In this paper, we present a novel DP4T antenna switch with very simple control logic and high power handling capabilities for dual-band WLAN applications. The suggested DP4T switch architecture requires only two control lines. The developed DP4T switch exhibits 1.2 to 1.7 dB of insertion loss, and 27/53 dB to 23/37 dB of isolation at 2.4 GHz and 5.25 GHz, respectively. It also demonstrates 31 dBm of input P0.1dB, 35 dBm of input P1dB in 3/0 V operation, as well as better than -62 dBc of 2nd harmonics and -73 dBc of 3rd harmonics response, respectively. The MMICs are developed in a commercial 0.25-/spl mu/m GaAs pHEMT process. This switch architecture is preferable for Si-based processes because substrate vias are not required due to its generic topology. To the best of our knowledge, this is the first report on a DP4T RF switch architecture with very simple control logic for dual-band WLAN applications.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121787304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
CMOS active inductor and its application in RF bandpass filter CMOS有源电感及其在射频带通滤波器中的应用
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320706
Yue Wu, Xiaohui Ding, M. Ismail, H. Olsson
{"title":"CMOS active inductor and its application in RF bandpass filter","authors":"Yue Wu, Xiaohui Ding, M. Ismail, H. Olsson","doi":"10.1109/RFIC.2004.1320706","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320706","url":null,"abstract":"In this paper, issues related to frequency and noise performance of a CMOS active inductor are addressed. A 2/sup nd/ order RF bandpass filter, based on the active inductor, has been implemented in a 0.35 /spl mu/m CMOS process. Tuned at 900 MHz, with Q=40, the filter has 27 dB SFDR and the total current consumption, including buffer stage, is 17 mA with a 3 V power supply. Experimental results also show the possibility of using them to build a higher order RF filter and VCO.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132768052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Multi-standard/multi-band adaptive voltage-controlled oscillator 多标准/多波段自适应压控振荡器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320549
A. Tasic, W. Serdijn, J. Long
{"title":"Multi-standard/multi-band adaptive voltage-controlled oscillator","authors":"A. Tasic, W. Serdijn, J. Long","doi":"10.1109/RFIC.2004.1320549","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320549","url":null,"abstract":"An adaptive, multi-standard voltage-controlled oscillator satisfying phase-noise requirements of both 2/sup nd/ and 3/sup rd/ generation wireless standards is described (i.e., 1.8 GHz DCS1800, 2.2 GHz WCDMA, and 2.4 GHz WLAN, Bluetooth and DECT standards). A factor of 12 reduction in power consumption with a phase-noise tuning range of 20 dB is realized by adapting the VCO bias to the desired application. The VCO achieves -123 dBc/Hz, -110 dBc/Hz and -103 dBc/Hz phase noise at 1 MHz offset from a 2.2 GHz carrier at supply currents of 6 mA, 1.2 mA and 0.5 mA, respectively.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134165042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
60 GHz CMOS radio for Gb/s wireless LAN 60 GHz CMOS无线电Gb/s无线局域网
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320579
C. Doan, S. Emami, D. Sobel, A. Niknejad, R. Brodersen
{"title":"60 GHz CMOS radio for Gb/s wireless LAN","authors":"C. Doan, S. Emami, D. Sobel, A. Niknejad, R. Brodersen","doi":"10.1109/RFIC.2004.1320579","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320579","url":null,"abstract":"The availability of 7 GHz of unlicensed spectrum in the 60 GHz band motivates the design of a low-cost 60 GHz wireless LAN (WLAN) system. System and circuit barriers to a low cost implementation are discussed and various solutions are proposed.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132386661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 41
DC-to-15- and DC-to-30-GHz CMOS distributed transimpedance amplifiers dc -15 ghz和dc -30 ghz CMOS分布式跨阻放大器
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI: 10.1109/RFIC.2004.1320676
Ren-Chieh Liu, Huei Wang
{"title":"DC-to-15- and DC-to-30-GHz CMOS distributed transimpedance amplifiers","authors":"Ren-Chieh Liu, Huei Wang","doi":"10.1109/RFIC.2004.1320676","DOIUrl":"https://doi.org/10.1109/RFIC.2004.1320676","url":null,"abstract":"Two broadband transimpedance amplifiers (TIAs) for optical applications were realized in a 0.18-/spl mu/m CMOS technology. The first TIA, cascading two three-stage cascode distributed amplifiers, achieves a transimpedance gain of 58 bB/spl Omega/ and a bandwidth of 15 GHz. The other, using a cascode distributed amplifier, achieves a transimpedance gain of 48 dB/spl Omega/ and a bandwidth of 30 GHz. The TIAs utilize a distributed technique with cascode gain cells to enhance the gain and bandwidth performance. This technique provides TIAs with ultra-broad bandwidth.","PeriodicalId":140604,"journal":{"name":"2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133657901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
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