2018 16th Biennial Baltic Electronics Conference (BEC)最新文献_第3页

Majority Type and Redundancy Level Influences on Redundant Data Types Approach for HLS 多数类型和冗余级别对HLS冗余数据类型方法的影响

2018 16th Biennial Baltic Electronics Conference (BEC) Pub Date : 2018-10-01 DOI: 10.1109/BEC.2018.8600951

Jakub Lojda, Jakub Podivinsky, Z. Kotásek, Martin Krcma

{"title":"Majority Type and Redundancy Level Influences on Redundant Data Types Approach for HLS","authors":"Jakub Lojda, Jakub Podivinsky, Z. Kotásek, Martin Krcma","doi":"10.1109/BEC.2018.8600951","DOIUrl":"https://doi.org/10.1109/BEC.2018.8600951","url":null,"abstract":"Due to the increasing demand for reliable computation in environments that require electronic systems to withstand an increased occurrence of faults (e.g., space, aerospace and medicine), new techniques of the so-called Fault Tolerance insertion arise. From another perspective, today's systems have become incredibly large and complex. Methodologies like High-Level Synthesis are used to reduce time to market and simplify the verification of the resulting system. In our research we focus on an implementation of Fault Tolerance into complex systems with the usage of High-Level Synthesis. In our approach, we are using newly designed Data Types that introduce redundancy on the functional level of an algorithm. In this student paper, our previously presented technique is extended by another means of redundancy and also by a new type of voting component. The systems incorporating various levels of redundancies using our approach are experimentally tested on the application of a robot controller. The paper also briefly presents the evaluation process and investigates its correct settings. The results show that the bit-based majority function is more suitable for usage with our Redundant Data Types.","PeriodicalId":140384,"journal":{"name":"2018 16th Biennial Baltic Electronics Conference (BEC)","volume":"271 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123113383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A Multilevel Topology Based on the T-Type Converter for SRM Drives 基于t型变换器的SRM驱动器多电平拓扑

2018 16th Biennial Baltic Electronics Conference (BEC) Pub Date : 2018-10-01 DOI: 10.1109/BEC.2018.8600983

V. Pires, A. Cordeiro, A. Pires, J. Martins, Hao Chen

引用次数: 12

Compact Multichannel Device for Differential Impedance Spectroscopy of Microfluidic Sensors 微流体传感器差分阻抗谱的紧凑多通道装置

2018 16th Biennial Baltic Electronics Conference (BEC) Pub Date : 2018-10-01 DOI: 10.1109/BEC.2018.8600955

J. Ojarand, R. Ehrminger, M. Min, A. Koel

引用次数: 1

Specific Signal Representation for Transmission and Processing based on Precise Event Timing 基于精确事件时序的特定信号传输和处理表示

2018 16th Biennial Baltic Electronics Conference (BEC) Pub Date : 2018-10-01 DOI: 10.1109/BEC.2018.8600979

I. Bilinskis, E. Boole, I. Mednieks

引用次数: 0

Energy Efficiency for Bisection based Power Allocation with Proportional Fairness in Relay-assisted LTE-A Downlink System 中继辅助LTE-A下行系统中基于比例公平的对分功率分配的能量效率

2018 16th Biennial Baltic Electronics Conference (BEC) Pub Date : 2018-10-01 DOI: 10.1109/BEC.2018.8600970

Hammad Hassan, I. Ahmed, R. Ahmad, Waqas Ahmed, M. Alam

引用次数: 1

Hyperspectral camera with polarized filter as modern supersensor device for cyber-physical systems 带偏振滤光片的高光谱相机是现代网络物理系统的超传感设备

2018 16th Biennial Baltic Electronics Conference (BEC) Pub Date : 2018-10-01 DOI: 10.1109/BEC.2018.8600957

M. Jürise, A. Udal, J. Kaugerand, R. Sell

引用次数: 1

A 200 MHz RF wireless power transfer receiver for implantable medical devices fully integrated in 130 nm CMOS 一种用于植入式医疗设备的200 MHz射频无线功率传输接收器，完全集成在130纳米CMOS中

2018 16th Biennial Baltic Electronics Conference (BEC) Pub Date : 2018-10-01 DOI: 10.1109/BEC.2018.8600988

M. Potocný, M. Kovác, D. Arbet, V. Stopjaková

{"title":"A 200 MHz RF wireless power transfer receiver for implantable medical devices fully integrated in 130 nm CMOS","authors":"M. Potocný, M. Kovác, D. Arbet, V. Stopjaková","doi":"10.1109/BEC.2018.8600988","DOIUrl":"https://doi.org/10.1109/BEC.2018.8600988","url":null,"abstract":"This paper deals with the design of a fully integrated RF power receiver operating at 200 MHz that is intended for inductively powered implantable medical devices. The main challenge in the design of such a system is the weak coupling between the transmitter and the receiver. This results in very low receiver input power. Further restrictions caused by the use of an on-chip receiver coil include the usable frequency band, which is limited by the coil self resonance frequency. The low quality of such coils also makes the common practice of using a parallel resonance circuit to boost the rectifier input voltage less effective, resulting in low input voltage for the rectifier. Therefore, a body biasing technique was used in the rectifier to make it more effective in such conditions. Tunable capacitors were included in the resonator to make the circuit adaptable to different input conditions. The receiver was designed in a standard 130 nm CMOS technology. The effects of input voltage, power, tuning voltage and load resistance on the receiver power conversion efficiency and output power are investigated.","PeriodicalId":140384,"journal":{"name":"2018 16th Biennial Baltic Electronics Conference (BEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130702556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Fall detection and activity recognition system for usage in smart work-wear 用于智能工作服的跌倒检测和活动识别系统

2018 16th Biennial Baltic Electronics Conference (BEC) Pub Date : 2018-10-01 DOI: 10.1109/BEC.2018.8600959

Mairo Leier, Gert Jervan, Ardo Allik, K. Pilt, D. Karai, I. Fridolin

引用次数: 5

Performance comparison of smartphones and a wearable motion sensor for patient m-assessment 智能手机和可穿戴运动传感器在患者m-评估中的性能比较

2018 16th Biennial Baltic Electronics Conference (BEC) Pub Date : 2018-10-01 DOI: 10.1109/BEC.2018.8600973

T. Kask, A. Kuusik

引用次数: 5

Numerical Simulation of P-Type Al/4H-SiC Schottky Barrier diodes p型Al/4H-SiC肖特基势垒二极管的数值模拟

2018 16th Biennial Baltic Electronics Conference (BEC) Pub Date : 2018-10-01 DOI: 10.1109/BEC.2018.8600976

Mehadi Hasan Ziko, A. Koel, Toomas Rangs

{"title":"Numerical Simulation of P-Type Al/4H-SiC Schottky Barrier diodes","authors":"Mehadi Hasan Ziko, A. Koel, Toomas Rangs","doi":"10.1109/BEC.2018.8600976","DOIUrl":"https://doi.org/10.1109/BEC.2018.8600976","url":null,"abstract":"Wide-bandgap (WBG) power semiconductor devices have good potential to replace Silicon-based devices for operating at higher temperatures. Silicon carbide (SiC) currently represents an established WBG candidate for developing power Schottky barrier diodes (SBD) used in power electronics that are required for the next generation power devices. Very few information is available about P-type 4H-SiC substrate being used for realization of SBD. Pre-production Technological computer aided design (TCAD) simulation of SBD, where p-doped epitaxial layer on p-type 4H-SiC substrate corresponds to experimental structures (currently in manufacturing process) could generate defects under the contact. P-type SiC SBD with some defects types is also examined for evaluating the influence on the forward current and reverse voltage blocking. Forward and reverse bias static characteristics are obtained for p-type 4H-SiC SBD at temperatures in the range of 300K to 600K. The currents are shown to have a large on resistance and tunneling component depending on the defects. The SBD device simulation shows that there is significant impact on the reverse current and voltage despite of the very thin defective layer. The reverse breakdown voltages of the diodes were found to decrease from several hundred volts to -100 V indicating the presence of defects edge leakage currents. The structural properties and characteristics of the resulting defects in the schottky contact layer are discussed.","PeriodicalId":140384,"journal":{"name":"2018 16th Biennial Baltic Electronics Conference (BEC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128634571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2