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Variation of optical bandwidth in defected ternary photonic crystal under different polarisation conditions 不同偏振条件下缺陷三元光子晶体光学带宽的变化
International Journal of Nanoparticles Pub Date : 2018-06-27 DOI: 10.1504/IJNP.2018.10013919
A. Deyasi, A. Sarkar
{"title":"Variation of optical bandwidth in defected ternary photonic crystal under different polarisation conditions","authors":"A. Deyasi, A. Sarkar","doi":"10.1504/IJNP.2018.10013919","DOIUrl":"https://doi.org/10.1504/IJNP.2018.10013919","url":null,"abstract":"Photonic bandwidth of defected one-dimensional ternary photonic crystal is analytically calculated under both types of oblique incidences. Both P and S type polarised incidences on the structure are considered in order to compute transmittivity of the proposed Butterworth type bandpass filter, and passband spectrum is kept at 1,550 nm by suitably choosing structural parameters and defect density. Defect is kept within feasible limit, and ripple in the desired passband region is tailored by its controlled variation. Width of passband as function of defect density, angle of incidence and dimension of constituent layers is computed, and critical dimension for the sandwiched layer is predicted over which the structure will behave as equivalent binary one. For closely-spaced signal transmission, this narrow bandpass filter will work as excellent candidate to improve SNR.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":"10 1","pages":"27"},"PeriodicalIF":0.0,"publicationDate":"2018-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46241465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
GaAs SOI FinFET: impact of gate dielectric on electrical parameters and application as digital inverter GaAs SOI FinFET:栅极介电对电气参数的影响及其在数字逆变器中的应用
International Journal of Nanoparticles Pub Date : 2018-06-27 DOI: 10.1504/IJNP.2018.10013917
R. Saha, B. Bhowmick, S. Baishya
{"title":"GaAs SOI FinFET: impact of gate dielectric on electrical parameters and application as digital inverter","authors":"R. Saha, B. Bhowmick, S. Baishya","doi":"10.1504/IJNP.2018.10013917","DOIUrl":"https://doi.org/10.1504/IJNP.2018.10013917","url":null,"abstract":"In this paper, a GaAs SOI (silicon on insulator) FinFET is proposed. A comparative study between proposed GaAs FinFET and conventional Si FinFET is presented. The effects of dielectric constant (k) of gate dielectric material on electrical parameters like channel potential, drain current, and Ion/Ioff have been reported. Results show that as k raises, both Ion/Ioff and channel potential increases. Again the impact of k on short channel effects (SCEs) has been investigated. TCAD results show that as k increases subthreshold swing (SS) improves, drain induced barrier lowering (DIBL) degrades, and VT roll off occur. The impacts of k on gate capacitance (CGG) and intrinsic delay (τ) have been presented and they increases as k increases. A digital CMOS inverter is implemented through proposed FinFET and the effect of k on its delay parameter is estimated. Results shows that average delay increase as k increases.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":"10 1","pages":"3"},"PeriodicalIF":0.0,"publicationDate":"2018-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45936468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Effects of hot-carrier degradation on the low frequency noise in strained-Si p-MOSFETs 热载流子退化对应变si - p- mosfet低频噪声的影响
International Journal of Nanoparticles Pub Date : 2018-06-27 DOI: 10.1504/IJNP.2018.10013921
Sanghamitra Das, Tara Prasanna Dash, C. K. Maiti
{"title":"Effects of hot-carrier degradation on the low frequency noise in strained-Si p-MOSFETs","authors":"Sanghamitra Das, Tara Prasanna Dash, C. K. Maiti","doi":"10.1504/IJNP.2018.10013921","DOIUrl":"https://doi.org/10.1504/IJNP.2018.10013921","url":null,"abstract":"The aim of this work is to study hot carrier degradation starting from microscopic mechanisms of defect generation and its effects on noise behaviour of scaled strained-Si MOSFETs. As device dimensions decrease, hot carrier effects, which are mainly due to the presence of a high electric field inside the device, are becoming a major device/circuit design concern. Studies of hot carrier degradation in high-mobility SiGe channel MOSFETs, in which a more severe degradation is expected due to the smaller bandgap compared to Si, are highly essential. A comprehensive model for hot carrier degradation has been used in simulation to capture the physical picture behind these detrimental effects. In this work, hot carrier degradation modelling issues have been carefully analysed and a comprehensive physics-based hot carrier degradation simulation study has been taken up. Peculiarities of the defect generation kinetics as well as their impact on degradation are discussed. We present the results of our studies on the hot carrier degradation in novel high-mobility SiGe/strained-Si channel MOSFETs and its effects on the low-frequency noise. It is shown due to hot carrier degradation, the hole mobility is degraded by about 40% after stressing. A two-fold degradation in drain current is also observed.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":"10 1","pages":"58"},"PeriodicalIF":0.0,"publicationDate":"2018-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47469931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of power consumption and delay of an inverter circuit using TMJLSRG MOSFET for the design of digital integrated circuit 用于数字集成电路设计的TMJLSRG MOSFET逆变电路的功耗和延迟分析
International Journal of Nanoparticles Pub Date : 2018-06-27 DOI: 10.1504/IJNP.2018.10013937
Surajit Bari, D. De
{"title":"Analysis of power consumption and delay of an inverter circuit using TMJLSRG MOSFET for the design of digital integrated circuit","authors":"Surajit Bari, D. De","doi":"10.1504/IJNP.2018.10013937","DOIUrl":"https://doi.org/10.1504/IJNP.2018.10013937","url":null,"abstract":"This paper represents delay and power analysis of an inverter using a triple-material junctionless surrounding gate MOSFET (TMJLSRG) to design integrated circuit. TCAD tools have been used for the purpose of simulation. The delay and power consumption are the vital design metrics to design the circuit in nano level. In this work, the variation of power consumption has been reported for different values of power supply voltage VDD and channel length. Delay is also reported with respect to VDD .Moreover, power consumption has been reported for the gate engineered device for different ratio of gate length. The results are satisfactory to design low power and high speed digital integrated circuit using TMJLSRG MOSFET.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":"10 1","pages":"117"},"PeriodicalIF":0.0,"publicationDate":"2018-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46744438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Adsorption of gaseous air pollutants over Ti-doped ZGNR structures: a DFT study 掺杂钛的ZGNR结构对气态空气污染物的吸附:DFT研究
International Journal of Nanoparticles Pub Date : 2018-06-27 DOI: 10.1504/IJNP.2018.10013920
R. Vatsyayan, Rajan Singh, R. Paily
{"title":"Adsorption of gaseous air pollutants over Ti-doped ZGNR structures: a DFT study","authors":"R. Vatsyayan, Rajan Singh, R. Paily","doi":"10.1504/IJNP.2018.10013920","DOIUrl":"https://doi.org/10.1504/IJNP.2018.10013920","url":null,"abstract":"In this study, we employed the density functional theory (DFT) to study the interactions between gaseous air pollutants, including di-atomic (CO and NO), tri-atomic (CO2 and HCN), and poly-atomic (HCHO and COCl2) species, and Ti-doped zigzag graphene nanoribbon (ZGNR) structures. During this, two types of doped structures are considered, i.e., SV-ZGNR in which Ti replaces one carbon atom and DV-ZGNR, in which Ti atom replaces two adjacent carbon atoms. All gases under consideration are observed to exhibit significant adsorption energy over doped ZGNR except COCl2 for which a catalytic dissociation is observed. Our results indicate that doped ZGNR is better for CO, NO, and HCHO adsorption as compared to that for reported doped graphene sheet. Also, DV-ZGNR is preferred over SV-ZGNR in terms of adsorption. Moreover, due to the adsorption, changes in the density of states are observed which confirms that the Ti-doped ZGNR has potential to be used as the sensing platform for these gases.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":"10 1","pages":"35"},"PeriodicalIF":0.0,"publicationDate":"2018-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43799991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Implementation of quadruple valued flip-flops using CMOS and spatial light modulator-based Savart plate 用CMOS和基于Savart板的空间光调制器实现四值触发器
International Journal of Nanoparticles Pub Date : 2018-06-27 DOI: 10.1504/IJNP.2018.10013939
Animesh Bhattacharya, Amal K. Ghosh, G. Maity
{"title":"Implementation of quadruple valued flip-flops using CMOS and spatial light modulator-based Savart plate","authors":"Animesh Bhattacharya, Amal K. Ghosh, G. Maity","doi":"10.1504/IJNP.2018.10013939","DOIUrl":"https://doi.org/10.1504/IJNP.2018.10013939","url":null,"abstract":"The designing and simulation of multi-valued logic (MVL) is a very interesting and important task in the present scenario. The memory devices in MVL system are the most important area of modern research. The MVL system consists of a number of intermediate states between the true and false instead of the conventional binary logic consists of only two states - 'true' and 'false'. Hence, the MVL enables more information to be handled in a much compact manner, especially suitable for handling big data. In quadruple valued logic (QVL) system, the additional two intermediate states are denoted as 'partially known' and 'partially unknown' which can be explored significantly to sequential logics also, e.g., flip-flops, etc. The present paper deals with the design and simulation of different kind of flip-flops in QVL system, using complementary metal oxide semiconductor (CMOS) and its optical implementation using spatial light modulator (SLM) and Savart plate.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":"10 1","pages":"141"},"PeriodicalIF":0.0,"publicationDate":"2018-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41816755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Staggered heterojunctions-based tunnel-FET for application as a label-free biosensor 用于无标记生物传感器的基于交错异质结的隧道FET
International Journal of Nanoparticles Pub Date : 2018-06-27 DOI: 10.1504/IJNP.2018.10013936
A. Chakraborty, D. Singha, A. Sarkar
{"title":"Staggered heterojunctions-based tunnel-FET for application as a label-free biosensor","authors":"A. Chakraborty, D. Singha, A. Sarkar","doi":"10.1504/IJNP.2018.10013936","DOIUrl":"https://doi.org/10.1504/IJNP.2018.10013936","url":null,"abstract":"In this work, on the basis of dielectric modulation, a heterojunction (HETJ) surrounding gate (SRG) tunnel field effect (TFET) biosensor has been proposed. Due to the presence of biomolecules having different dielectric constant in the nanogap region of the biosensor, sensing has been performed. The sensitivity of the biosensor has been indicated using the traditional change in threshold voltage as well as in terms of ION/IOFF ratio. The results obtained from TCAD device simulation reveals that the proposed HETJ-based biosensor provides higher sensitivity as compared to other existing homojunction (HJ)-based biosensors.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":"10 1","pages":"107"},"PeriodicalIF":0.0,"publicationDate":"2018-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44936430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Millimetre-wave and terahertz IMPATT sources: influence of inter-carrier interactions 毫米波和太赫兹冲击源:载波间相互作用的影响
International Journal of Nanoparticles Pub Date : 2018-06-27 DOI: 10.1504/IJNP.2018.10013938
Prasit Kumar Bandyopadhya, A. Biswas, A. Bhattacharjee, A. Acharyya
{"title":"Millimetre-wave and terahertz IMPATT sources: influence of inter-carrier interactions","authors":"Prasit Kumar Bandyopadhya, A. Biswas, A. Bhattacharjee, A. Acharyya","doi":"10.1504/IJNP.2018.10013938","DOIUrl":"https://doi.org/10.1504/IJNP.2018.10013938","url":null,"abstract":"A major amount of energy of mobile electrons and holes in a semiconductor under electric field are lost due to inter-carrier collisions prior to ionising collision. This fact causes a decrease in the ionisation probability which leads to the deterioration in ionisation rates especially when the doping density is high. The effects of this phenomenon on the high frequency and noise properties of highly doped impact avalanche transit time (IMPATT) devices based on different wide bandgap (WBG) semiconductors, like 4H-SiC, Wurtzite-GaN (Wz-GaN) and type-IIb diamond (C) have been studied in this paper. Significant deteriorations in the diodes' high frequency and noise performance have been observed in the simulation results. The simulation results have been compared with the experimental data in order to validate those.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":"10 1","pages":"124"},"PeriodicalIF":0.0,"publicationDate":"2018-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48156498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
An insight into the high frequency analysis of work function modulated cylindrical surrounding gate MOSFET 功函数调制圆柱形环绕栅MOSFET的高频分析
International Journal of Nanoparticles Pub Date : 2018-06-27 DOI: 10.1504/IJNP.2018.10013918
B. Jena, S. Dash, G. P. Mishra
{"title":"An insight into the high frequency analysis of work function modulated cylindrical surrounding gate MOSFET","authors":"B. Jena, S. Dash, G. P. Mishra","doi":"10.1504/IJNP.2018.10013918","DOIUrl":"https://doi.org/10.1504/IJNP.2018.10013918","url":null,"abstract":"The unique design along with greater accuracy in device performance has made cylindrical surrounding gate MOSFET (CSGM) a cutting edge device in the present VLSI technology. Due to its cylindrical geometry, this device provides higher packing density and higher scaling possibilities. In this work, a work function engineering based metal gate with continuous mole fraction variation along the z-axis in a cylindrical surrounding gate MOSFET (WMCSGM) is introduced. The proposed WMCSGM model exhibits improved RF performance as compared to conventional CSGM model. The static gm-VGS curve and Cgg-VGS curves are investigated clearly. The relevant electrical parameters such as threshold voltage (Vth), drain current (Id) and transconductance are extracted. Along with the electrical parameters, RF parameters and gain parameters (current gain and voltage gain) and different performance measures (cut-off frequency, maximum oscillation frequency) have been extensively investigated.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":"10 1","pages":"15"},"PeriodicalIF":0.0,"publicationDate":"2018-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46878552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on surface plasmon-based improvement in absorption in plasmonic solar cell 基于表面等离子体改善等离子体太阳能电池吸收的研究
International Journal of Nanoparticles Pub Date : 2018-06-27 DOI: 10.1504/IJNP.2018.10013922
P. Sarkar, Saradindu Panda, B. Maji, A. Mukhopadhyay
{"title":"Study on surface plasmon-based improvement in absorption in plasmonic solar cell","authors":"P. Sarkar, Saradindu Panda, B. Maji, A. Mukhopadhyay","doi":"10.1504/IJNP.2018.10013922","DOIUrl":"https://doi.org/10.1504/IJNP.2018.10013922","url":null,"abstract":"Recently, plasmonics offers very high attention and greatly deals with various field includes the nanophotonics domain. In the plasmonic field, when the nanoparticle is much smaller than the wave length of light, coherent oscillation of the conduction band electrons induced by interaction with an electromagnetic field and conjointly improves absorption through scattering. In this paper, we studied the effectiveness of nanoparticle dimension to enhance extinction in terms of absorption and scattering for silver, gold, copper and aluminium nanoparticles. We also studied finite difference time domain-based solar cell model that improves various simulated plasmonic field components and observed that the high sensitivity of the surface plasmon resonance spectrum of noble metal nanoparticles to adsorbate induced changes in dimension and dielectric constant of the surrounding nanoenvironment. We also observed that noble metal specifically silver and gold nanoparticles significantly improve optical absorption than copper and aluminium nanoparticles.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":"10 1","pages":"77"},"PeriodicalIF":0.0,"publicationDate":"2018-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47430145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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