An insight into the high frequency analysis of work function modulated cylindrical surrounding gate MOSFET

Abstract

The unique design along with greater accuracy in device performance has made cylindrical surrounding gate MOSFET (CSGM) a cutting edge device in the present VLSI technology. Due to its cylindrical geometry, this device provides higher packing density and higher scaling possibilities. In this work, a work function engineering based metal gate with continuous mole fraction variation along the z-axis in a cylindrical surrounding gate MOSFET (WMCSGM) is introduced. The proposed WMCSGM model exhibits improved RF performance as compared to conventional CSGM model. The static gm-VGS curve and Cgg-VGS curves are investigated clearly. The relevant electrical parameters such as threshold voltage (Vth), drain current (Id) and transconductance are extracted. Along with the electrical parameters, RF parameters and gain parameters (current gain and voltage gain) and different performance measures (cut-off frequency, maximum oscillation frequency) have been extensively investigated.