Staggered heterojunctions-based tunnel-FET for application as a label-free biosensor

Q4 Engineering
A. Chakraborty, D. Singha, A. Sarkar
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引用次数: 12

Abstract

In this work, on the basis of dielectric modulation, a heterojunction (HETJ) surrounding gate (SRG) tunnel field effect (TFET) biosensor has been proposed. Due to the presence of biomolecules having different dielectric constant in the nanogap region of the biosensor, sensing has been performed. The sensitivity of the biosensor has been indicated using the traditional change in threshold voltage as well as in terms of ION/IOFF ratio. The results obtained from TCAD device simulation reveals that the proposed HETJ-based biosensor provides higher sensitivity as compared to other existing homojunction (HJ)-based biosensors.
用于无标记生物传感器的基于交错异质结的隧道FET
本文在介质调制的基础上,提出了一种异质结(HETJ)环栅(SRG)隧道场效应(TFET)生物传感器。由于在生物传感器的纳米间隙区域存在不同介电常数的生物分子,因此进行了传感。生物传感器的灵敏度已经用传统的阈值电压的变化以及离子/IOFF比来表示。TCAD装置仿真结果表明,与其他现有的基于同质结(HJ)的生物传感器相比,所提出的基于hetj的生物传感器具有更高的灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
International Journal of Nanoparticles
International Journal of Nanoparticles Engineering-Mechanical Engineering
CiteScore
1.60
自引率
0.00%
发文量
15
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