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A comparative study on the effects of technology nodes and logic styles for low power high speed VLSI applications 技术节点和逻辑样式对低功耗高速VLSI应用影响的比较研究
International Journal of Nanoparticles Pub Date : 2020-03-20 DOI: 10.1504/ijnp.2020.106004
I. Hussain, S. Chaudhury
{"title":"A comparative study on the effects of technology nodes and logic styles for low power high speed VLSI applications","authors":"I. Hussain, S. Chaudhury","doi":"10.1504/ijnp.2020.106004","DOIUrl":"https://doi.org/10.1504/ijnp.2020.106004","url":null,"abstract":"Carbon nanotubes (CNT) field-effect transistor (CNTFET) could be a possible alternative to CMOS technology for future VLSI applications. In this work, a comparative study has been carried out on the effects of technology nodes and logic styles on power dissipation, delay, leakages, etc. The technology nodes that are considered here are 90 nm and 32 nm MOSFET technology, and 32 nm CNTFET technology. The logic families considered here are the conventional complementary metal-oxide-semiconductor (CMOS), complementary pass transistor logic (CPL) and transmission gate (TG). The digital circuits considered are NAND, NOR, XOR and MUX gates. HSPICE simulations have been carried out and observed that at 32 nm CNTFET technology, the least power, worst-case delay and least PDP are found as 15.5 nW, 3.11 ps and 0.048 aJ, respectively. It is witnessed that CNTFET-based logics are superior compared to other logic families at different technology nodes.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1504/ijnp.2020.106004","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48067828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Systematic design strategy for DPL-based ternary logic circuit 基于dpl的三元逻辑电路的系统设计策略
International Journal of Nanoparticles Pub Date : 2020-03-20 DOI: 10.1504/ijnp.2020.105997
A. Saha, N. Singh
{"title":"Systematic design strategy for DPL-based ternary logic circuit","authors":"A. Saha, N. Singh","doi":"10.1504/ijnp.2020.105997","DOIUrl":"https://doi.org/10.1504/ijnp.2020.105997","url":null,"abstract":"This work proposes novel strategy to design 2-input ternary (base-3) logic circuits using double pass-transistor logic (DPL). The concept has been explored with respect to 2-input TXOR gate. The circuit diagram of proposed DPL-based TXOR, TAND and TOR logic gate is presented. The proposed T-Cells are designed and optimised using BSIM3 device model with 1.8 V supply rail and at 25°C temperature on TSMC 0.18 µm CMOS technology. The transient response from T-Spice simulatio is validated and the speed-power performance is recorded. Next, the 2:9 ternary decoder based on proposed idea has been explained. The decoder circuit is also designed with 1.8 V supply rail at 25°C temperature on TSMC 0.18 µm CMOS technology. The trit value '0', '1' and '2' are represented with 0 V, 0.9 V and 1.8 V respectively. As per simulation result the proposed 2:9 ternary decoder dissipates 383.57 µW average power and takes 64.87 ps to generate final output.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1504/ijnp.2020.105997","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41437660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Comparative performance analysis of FPGA-based MAC unit using non-conventional number system in TVL domain for signal processing algorithm 采用TVL域非常规数制进行信号处理算法的基于fpga的MAC单元性能对比分析
International Journal of Nanoparticles Pub Date : 2020-03-20 DOI: 10.1504/ijnp.2020.106000
Aniruddha Ghosh, A. Sinha
{"title":"Comparative performance analysis of FPGA-based MAC unit using non-conventional number system in TVL domain for signal processing algorithm","authors":"Aniruddha Ghosh, A. Sinha","doi":"10.1504/ijnp.2020.106000","DOIUrl":"https://doi.org/10.1504/ijnp.2020.106000","url":null,"abstract":"Today, the complication of binary digital hardware system is progressively growing. Due to this fact, new methodologies for efficiently describing and realising the digital systems are explored in this paper. Multi-valued logic methodology offers a few preferences over existing binary digital system. One of the well-known multi-valued logic systems is ternary value logic (TVL) system. It is seen that all kind of digital signal processing (DSP) algorithms widely use multiply-accumulate (MAC) operation for superior digital processing system. To implement high performance DSP algorithms MAC unit is used extensively. In current scenario, it is seen that non-conventional, non-binary number system-based architecture is also exhibited better performance. The example of such non-conventional, non-binary number systems is ternary residue number systems (TRNSs) and double base ternary number system (DBTNS). Here, a comparative study is made on performance analysis of MAC unit using various non-conventional, non-binary number system. All the architecture is mapped on FPGA for analysis its performance.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1504/ijnp.2020.106000","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45188165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A comparative analysis of the short-channel effects of double-gate, tri-gate and gate-all-around MOSFETs 双栅极、三栅极和栅极全能mosfet短沟道效应的比较分析
International Journal of Nanoparticles Pub Date : 2020-03-20 DOI: 10.1504/ijnp.2020.106002
Shankaranand Jha, S. K. Choudhary
{"title":"A comparative analysis of the short-channel effects of double-gate, tri-gate and gate-all-around MOSFETs","authors":"Shankaranand Jha, S. K. Choudhary","doi":"10.1504/ijnp.2020.106002","DOIUrl":"https://doi.org/10.1504/ijnp.2020.106002","url":null,"abstract":"The electrical characteristics of metal-oxide semiconductor field-effect transistors (MOSFETs) deteriorate with the scaling of device dimensions. To further the miniaturisation and to have more control over the channel, one of the promising solutions is the multi-gate (MG) architecture of MOSFET. In the present work we have investigated various MG devices like double-gate (DG), tri-gate (TG) and gate-all-around (GAA) MOSFETs by varying their physical parameters and have compared the associated short-channel effects (SCEs). For a specific SCE, a common mathematical expression has been used for all the MOSFET architectures. The analytical results have been found to be in reasonable agreement with the simulated/fabricated devices.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1504/ijnp.2020.106002","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46590219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Modulation of millimetre-wave and THz properties of IMPATT sources via external magnetic field 外加磁场对IMPATT源毫米波和太赫兹特性的调制
International Journal of Nanoparticles Pub Date : 2020-03-20 DOI: 10.1504/ijnp.2020.105998
P. Banerjee, A. Acharyya, A. Biswas, A. Bhattacharjee
{"title":"Modulation of millimetre-wave and THz properties of IMPATT sources via external magnetic field","authors":"P. Banerjee, A. Acharyya, A. Biswas, A. Bhattacharjee","doi":"10.1504/ijnp.2020.105998","DOIUrl":"https://doi.org/10.1504/ijnp.2020.105998","url":null,"abstract":"The modulation of millimetre-wave (mm-wave) and terahertz (THz) properties of impact avalanche transit time (IMPATT) sources under external steady magnetic field has been studied in this paper. The arrangement of magnetic field tuning of IMPATT oscillators by using external transverse steady magnetic field is referred to as magnetic field tunable avalanche transit time (MAGTATT) oscillators. The sensitivities of various static, large-signal and noise characteristics of silicon-based MAGTATT sources operating at mm-wave atmospheric window frequencies (94, 140 and 220 GHz) and two different THz frequencies (0.3 and 0.5 THz) have been studied. Comprehensive two-dimensional simulation models developed by the authors for evaluating static, large-signal and noise characteristics of MATATT diodes have been used for this purpose. The simulation results show that the above-mentioned magnetic field sensitivities of the device properties are significantly reduced with the increase of the operating frequency.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1504/ijnp.2020.105998","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42869155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of a visible light communication system for reducing flicker in low data rate requirement 开发可见光通信系统，减少低数据速率要求下的闪烁
International Journal of Nanoparticles Pub Date : 2020-03-20 DOI: 10.1504/ijnp.2020.106001
Sujit Chatterjee, B. Tiru
{"title":"Development of a visible light communication system for reducing flicker in low data rate requirement","authors":"Sujit Chatterjee, B. Tiru","doi":"10.1504/ijnp.2020.106001","DOIUrl":"https://doi.org/10.1504/ijnp.2020.106001","url":null,"abstract":"In visible light communication, the illumination as well as transmission of data is done using the same light source. In this paper, the problem of flicker is dealt with and an experimental setup is developed using frequency shift keying (FSK) that is much more efficient than the commonly used on-off keying (OOK). A flicker free transmission is obtained which is 62% lower than OOK. A decrease of BER by 86.8% and 85.3% compared to the later is obtained at a distance of 30 cm and 480 cm respectively. For FSK, a 10% increase in BER is found at an angle of 3° which shows considerable improvement over OOK, as the later showed the same error only at 1° (measured at 100 cm). The experimental arrangement is described in detail that would enable replication of the setup in low bit rate requirements.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":" 30","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141221778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance enhancement of double-gate tunnel FETs using dual-metal and graded-channel configuration 利用双金属和梯度通道结构增强双栅隧道场效应管的性能
International Journal of Nanoparticles Pub Date : 2020-03-20 DOI: 10.1504/ijnp.2020.106007
C. Pandey, S. Chaudhury
{"title":"Performance enhancement of double-gate tunnel FETs using dual-metal and graded-channel configuration","authors":"C. Pandey, S. Chaudhury","doi":"10.1504/ijnp.2020.106007","DOIUrl":"https://doi.org/10.1504/ijnp.2020.106007","url":null,"abstract":"In this paper, a novel structure of double-gate TFET (DG-TFET) is proposed with graded-channel and dual-metal configuration showing huge reduction in ambipolar conduction. Using TCAD simulations, it is shown that a heavily-doped channel region along with gate metal with lower work-function adjacent to drain region modulates the alignment of band energy at output tunnelling interface in such a manner that an increment in the tunnelling width is occurred. Eventually, a huge reduction in ambipolar conduction is observed in the proposed device. However, performance of the proposed device is shown to be degraded if length of the channel region adjacent to drain is increased beyond a certain value. Through simulations, length-ratio and doping concentration of two channel regions is optimized to achieve the minimum ambipolar current. Additionally, it is demonstrated that ambipolar conduction is completely eliminated in the proposed device even if drain region is doped as heavily as source region.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1504/ijnp.2020.106007","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45834585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simple tuning of modified Smith predictor for unstable FOPTD processes 不稳定FOPTD过程的修正Smith预测器的简单调整
International Journal of Nanoparticles Pub Date : 2020-03-20 DOI: 10.1504/ijnp.2020.106016
Somak Karan, C. Dey
{"title":"Simple tuning of modified Smith predictor for unstable FOPTD processes","authors":"Somak Karan, C. Dey","doi":"10.1504/ijnp.2020.106016","DOIUrl":"https://doi.org/10.1504/ijnp.2020.106016","url":null,"abstract":"A simple tuning for modified Smith predictor is reported here to control unstable first-order plus time delay (FOPTD) processes. In practice, a good number of chemical processes (like combustion, evaporation, distillation, etc.) are unstable as well as delay dominated in nature. Modified Smith predictor technique is a well-accepted methodology for its simplicity and efficacy to regulate delay dominated processes to ascertain desirable closed-loop response. Two-degree-of-freedom (2-DOF) control scheme of the proposed multi-loop controller provides performance enhancement during both set point tracking and load recovery phases. To mitigate tuning complexity of more than one controller involved in modified Smith predictor, the proposed simple guideline involves the same set of tuning parameters for all three controllers. Distinctive feature of the proposed tuning scheme is that there is no overshoot during set point tracking as well as smooth and improved recovery is observed subsequent to uncertain load changes. Superiority of the proposed methodology is established through performance evaluation and stability analysis with well-accepted modified Smith predictor-based tuning relations.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1504/ijnp.2020.106016","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42777549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optoelectronic properties of multiple quantum barriers nano-scale avalanche photo diodes 多量子势垒纳米雪崩光电二极管的光电特性
International Journal of Nanoparticles Pub Date : 2020-03-20 DOI: 10.1504/ijnp.2020.106003
Somrita Ghosh, A. Biswas, A. Acharyya
{"title":"Optoelectronic properties of multiple quantum barriers nano-scale avalanche photo diodes","authors":"Somrita Ghosh, A. Biswas, A. Acharyya","doi":"10.1504/ijnp.2020.106003","DOIUrl":"https://doi.org/10.1504/ijnp.2020.106003","url":null,"abstract":"The important optoelectronic properties like spectral response, excess noise characteristics, time and frequency response of multiple quantum barrier (MQB) nano-scale avalanche photodiodes (APDs) based on Si~3C-SiC material system have been studied. A self-consistent simulation method based on quantum drift-diffusion model has been presented. Simulation results show that the Si~3C-SiC MQB nano-APDs are capable of detecting significantly longer wavelengths as compared to infrared flat Si APDs. The multiplication gain and excess noise factor (ENF) of the MQB APDs have been calculated by varying the number of quantum barriers (QBs). The numerically calculated ENF values of MQB APDs have been compared with the ENF of Si flat conventional APDs of similar dimensions and it is observed that the use of QBs leads to significant reduction in ENF of the APDs. Simulation results also show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the Si counterparts.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1504/ijnp.2020.106003","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41861610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of nickel doping on the structural, optical, electrochemical and magnetic properties of hausmannite (Mn3O4) nanoparticles 镍掺杂对欧氏锰纳米颗粒结构、光学、电化学和磁性能的影响
International Journal of Nanoparticles Pub Date : 2019-12-20 DOI: 10.1504/ijnp.2019.10025866
S. Karpagavalli, S. J. K. Vethanathan, S. Perumal
{"title":"Effect of nickel doping on the structural, optical, electrochemical and magnetic properties of hausmannite (Mn3O4) nanoparticles","authors":"S. Karpagavalli, S. J. K. Vethanathan, S. Perumal","doi":"10.1504/ijnp.2019.10025866","DOIUrl":"https://doi.org/10.1504/ijnp.2019.10025866","url":null,"abstract":"Nickel doped manganese tetroxide (Mn3O4) nanoparticles are synthesised by microwave assisted solvothermal route. The structural characterisation of as prepared Ni doped Mn3O4 nanoparticles are determined by the aid of powder X-ray diffraction (XRD). The functional groups present in the material are determined by Fourier transform infrared (FTIR) analysis. The transmission electron microscope (TEM) images showed the topographical, compositional and crystalline information. Energy-dispersive X-ray (EDX) analysis determines the abundance of specific elements. The optical properties are analysed by ultraviolet-visible (UV-Vis) spectroscopy. The perceived red shift in the UV-Vis absorption spectra confirmed the stimulated electron-phonon interaction in nickel doped Mn3O4 nanoparticles. The electrochemical characteristics of nickel doped Mn3O4 nanoparticles are examined by cyclic voltammogram (CV). The vibrating sample magnetometer (VSM) studies confirmed the ferromagnetic behaviour of Ni doped Mn3O4 nanoparticles at room temperature.","PeriodicalId":14016,"journal":{"name":"International Journal of Nanoparticles","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46842479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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