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2006 IEEE International Conference on Semiconductor Electronics最新文献

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How the Optical Properties of Au Nanoparticles are Affected by Surface Plasmon Resonance 表面等离子体共振如何影响金纳米粒子的光学性质
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.381035
Yen-Hsun Su, W. Lai, L. Teoh, H. Hong, M. Hon
{"title":"How the Optical Properties of Au Nanoparticles are Affected by Surface Plasmon Resonance","authors":"Yen-Hsun Su, W. Lai, L. Teoh, H. Hong, M. Hon","doi":"10.1109/SMELEC.2006.381035","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381035","url":null,"abstract":"Gold nanoparticles (Au NPs) have been attracting more attention because they have many color varieties in the visible region based on plasmon resonance, which is due to the collective oscillation of the electrons at the surface of the nanoparticles. We prepared 6 nm Au NPs to modify the surface of the glass substrate. Surface plasmons resonance of Au NPs in toluene is between 500 nm and 600 nm. When Au NPs are modified on the glass substrate, the peak of surface plasmons resonance of Au NPs is shifted. We employed spectral ellipsometry to detect optical properties. Then the characteristics of surface plasmons resonance of Au NPs is determined by reflective index. The performance of surface plasmons resonance of Au NPs on the glass substrate is simulated and shown.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129865798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Crosstalk Enhancement in Multiplexer/Demultiplexer Based Arrayed Wavelength Grating in Dense Wavelength Division Multiplexing 密集波分复用中基于阵列波长光栅的复用/解复用串扰增强
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.381050
S. Elfaki, A. Kareem, A. Mohammed, S. Shaari
{"title":"Crosstalk Enhancement in Multiplexer/Demultiplexer Based Arrayed Wavelength Grating in Dense Wavelength Division Multiplexing","authors":"S. Elfaki, A. Kareem, A. Mohammed, S. Shaari","doi":"10.1109/SMELEC.2006.381050","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381050","url":null,"abstract":"In this paper we describe the performance of the Multiplexer/Demultiplexer (MUX/DEMUX) in the Dense Wavelength Division Multiplexer (DWDM) technology based on arrayed waveguide grating (AWG). The accumulated crosstalk in large-scale AWG solved by the cascade-connection of small AWGs. We propose two branches of 64 channels each have two stages of AWG cascaded as second and third stages. We introduce an interleaver filter based on AWG to produce odd and even optical channels (64) as an input to each branch, which relax the system by doubling the space between channels.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128358309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A New High Resolution Frequency and Phase Synthesis Method based on `Flying-Adder' Architecture 一种基于“飞加法器”结构的高分辨率频率和相位合成新方法
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.380684
H. Gharaee, E. Tathesari
{"title":"A New High Resolution Frequency and Phase Synthesis Method based on `Flying-Adder' Architecture","authors":"H. Gharaee, E. Tathesari","doi":"10.1109/SMELEC.2006.380684","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380684","url":null,"abstract":"High speed electronic systems demand frequency synthesizer of high resolution, wide bandwidth and fast switching speed. The \"Flying-Adder\" architecture is a frequency and phase synthesis technique that is based on a VCO of multiple delay stages. This Flying-Adder is implemented in Quartus software which its result shows that the highest frequency is about 83 MHz, when VCO oscillates at 5.2 MHz. In some cases, this architecture has a barrier of inherent jitter on the output frequency. In this brief, a new method is proposed for eliminating such jitter problem. This method is caused to achieve exact phase and frequency. This design is implemented in Quartus software with EP1K30QC208-1 device from ACEX IK series. When VCO is running at 0.651-10 MHz high resolution output frequency is achieved.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128629338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Dependence of Texture in Al Bondpads on Ta/TaN Bilayer Barrier and its Correlation to Optical Reflectivity in 0.13μm IC Technology 0.13μm集成电路中Al键垫织构对Ta/TaN双层势垒的依赖及其与光学反射率的关系
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.380739
Lee Yuan Ping, R. R. Nistala, H. Younan, M. Bhat
{"title":"Dependence of Texture in Al Bondpads on Ta/TaN Bilayer Barrier and its Correlation to Optical Reflectivity in 0.13μm IC Technology","authors":"Lee Yuan Ping, R. R. Nistala, H. Younan, M. Bhat","doi":"10.1109/SMELEC.2006.380739","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380739","url":null,"abstract":"In this paper, the dependence of crystallographic orientation in Aluminum thin films grown on different barrier-metal substrate schemes (Ta or Ta/TaN) will be presented. The orientation of Al grains will be shown to have a bearing on the material characteristics, which are important in IC fabrication from the perspective of both the device functionality and reliability. X-ray powder diffraction studies indicate that the films deposited on a single Ta layer are randomly oriented. On the other hand, a Ta/TaN bilayer substrate scheme results in preferred orientation along Al(111). A correlation will be established between the grain orientation and optical reflectivity properties of Al films. Moreover, the optical appearance of bondpads and their bondability are also influenced by the orientation of Al grains.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127033467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Piezo-Resistive Metal Gauge on Rectangular Membrane for Low Pressure Application 低压矩形膜压阻式金属表的仿真研究
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.381070
M.Y. Hamid, U. Thangamani, P. Vaya
{"title":"Simulation of Piezo-Resistive Metal Gauge on Rectangular Membrane for Low Pressure Application","authors":"M.Y. Hamid, U. Thangamani, P. Vaya","doi":"10.1109/SMELEC.2006.381070","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381070","url":null,"abstract":"Piezo-resistive metal gauge on rectangular membrane design and its simulation for low pressure application is presented in this paper. Small deflection analytical equations are derived for both simply supported and clamped edge boundary conditions. The design and orientation of grid pattern on rectangular membrane is based on ANSYS simulation results. It is used to find out maximum strain locations to achieve high sensitivity. Maximum of 0.3509 micro strain and maximum resistance change in grid = 90.6271 micro-ohm are achieved for an applied load of ImPa. The sensitivity of the gauge is 0.35 muepsiv/mPa.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130619617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Adopting Electroabsorption Modulator for the WLAN 802.11a Radio over Fibre System 采用电吸收调制器的WLAN 802.11a光纤无线系统
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.380762
S. Yaakob, M. Ismail, R. Mohamad, M. Yahya, A. Mat, M. Mokhtar, H. Rashid
{"title":"Adopting Electroabsorption Modulator for the WLAN 802.11a Radio over Fibre System","authors":"S. Yaakob, M. Ismail, R. Mohamad, M. Yahya, A. Mat, M. Mokhtar, H. Rashid","doi":"10.1109/SMELEC.2006.380762","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380762","url":null,"abstract":"This paper presents the evaluation of radio over fibre (ROF) capability with electroabsorption modulator (EAM) as a downlink photodetector (PD) and uplink radio frequency (RF) modulator. The results show that the EAM device has potential to be adopted as the transceiver at the remote antenna unit (RAU) for the system. The 130 m ROF system with biased EAM is capable to obtain a symmetrical WLAN 802.11a data rate of 18 Mbps with laser diode output power of 8.7 dBm.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123510842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Contact Hole Printing in Binary Mask by FLEX Technique 用FLEX技术打印二进制掩模中的接触孔
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.381098
Cheong Yew Shun, Ko Bong Sang, M.J. Bin Manaf, K. Ibrahim, Zahid Jamal
{"title":"Contact Hole Printing in Binary Mask by FLEX Technique","authors":"Cheong Yew Shun, Ko Bong Sang, M.J. Bin Manaf, K. Ibrahim, Zahid Jamal","doi":"10.1109/SMELEC.2006.381098","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381098","url":null,"abstract":"The shrinking of contact opening is inevitable, as the technology progresses. The most obvious shrink strategies, wavelength reduction and phase-shifting masks (PSM) offer the most significant improvements to meet these demands, but at a hefty price. By using focus latitude exposure technique (FLEX) it is possible to print down contact hole with reasonable processing latitude using 248 nm wavelength lithography and binary mask. A few parameters were varied to obtain suitable condition. Several feature sizes were printed and measured to get the proper combination of the print bias and focal distances with acceptable process margin. Verification on production wafer is needed for different pitch of feature sizes and fine-tuning on the focal distance for optimum results.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114218759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of N2 and O2 Anneal Gas Ratio For Low Resistance p - Type ZnO Formation N2和O2退火气体比对低阻p型ZnO生成的影响
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.381112
H. A. Hamid, M. Abdullah, A. Aziz, N. Al-Hardan, S. A. Rosli
{"title":"Effect of N2 and O2 Anneal Gas Ratio For Low Resistance p - Type ZnO Formation","authors":"H. A. Hamid, M. Abdullah, A. Aziz, N. Al-Hardan, S. A. Rosli","doi":"10.1109/SMELEC.2006.381112","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381112","url":null,"abstract":"P - type conduction in ZnO thin films was realized by codoping method. ZnO thin films were prepared on silicon (111) substrates by DC magnetron sputtering using pure zinc disk as target and underwent heat treatment at 300degC for 1 hr. Results indicated that the co doped p - type ZnO had the lowest resistivity of 3.412 times 10-3 Omega.cm with a carrier concentration of 1.54 times 1022 cm-3.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132410520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The Effect of Surface Microstructure on The Response of Titanium Dioxide Coated with Cobalt-Porphyrin Thin Films Towards Gases in Quartz Crystal Microbalance Sensor 表面微结构对二氧化钛包覆钴卟啉薄膜对石英晶体微平衡传感器气体响应的影响
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.381065
S. Arshad, M. Salleh, M. Yahaya
{"title":"The Effect of Surface Microstructure on The Response of Titanium Dioxide Coated with Cobalt-Porphyrin Thin Films Towards Gases in Quartz Crystal Microbalance Sensor","authors":"S. Arshad, M. Salleh, M. Yahaya","doi":"10.1109/SMELEC.2006.381065","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381065","url":null,"abstract":"A single-layer and multi-layer titanium dioxide (TiO2) coated with dye porphyrin thin films were prepared on Quartz Crystal Microbalance (QCM) using sol-gel dip coating method and were tested for sensing of volatile organic compounds (VOCs). The porphyrin was 2,3,7,8,12,13,17,18-octaethyl- 21H,23H-porphine cobalt (II). The sensing sensitivity was based on the change in the fundamental frequency of the QCM upon exposure towards three vapor samples, namely ethanol, acetone and 2-propanol. It was found that the thin films were sensitive towards all vapors and the sensing sensitivity was affected by the number of film layers. Although the three-layer film exhibited higher frequency response compared with the other films that have small number of layers, the sensing properties of this film are not repeatable and less selective. The performance of the QCM sensor was depended on microstructure of the thin film which was varied through the number layers.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130246965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photolithography Process Improvement for Thick Implant Resist Using 120°C Post-Apply Bake 应用120°C后烤技术改进厚植入抗蚀剂光刻工艺
2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI: 10.1109/SMELEC.2006.380760
S. I. Yet, E.C. Goh, F. Lim, A. E. Ling, B.C. Lee, Y.K. Ng, W. Sheu
{"title":"Photolithography Process Improvement for Thick Implant Resist Using 120°C Post-Apply Bake","authors":"S. I. Yet, E.C. Goh, F. Lim, A. E. Ling, B.C. Lee, Y.K. Ng, W. Sheu","doi":"10.1109/SMELEC.2006.380760","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380760","url":null,"abstract":"Conventional I-line lithography process utilizes single post-apply bake temperature to unify and simplify the process. As design rule shrinks and mask field size increases, tighter specification is applied on non-critical implant layers, including thick implant resist with thickness typically 4.0 mum and above. Poor uniformity for CD & overlay was observed for thick implant resist layer. Systematic uncorrectable overlay residue was observed from the overlay map. Cross-section analysis shows asymmetric resist profile existed, causing inaccurate signal reading during measurement. Besides, huge amount of resist out-gassing found contaminate the CD-SEM gun tip and causing problem during implant process. In this paper, the problems of thick implant resist layer is analyzed and the process improvement on thick implant resist layer by using higher post-apply bake temperature is introduced. The resist profile changed was checked in detail and the resist removal after implant was verified. As a result, both CD & overlay uniformity was greatly improved. New process with higher post-apply bake condition was fully qualified with comparable wafer yield.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130261818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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