N2和O2退火气体比对低阻p型ZnO生成的影响

2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI:10.1109/SMELEC.2006.381112

H. A. Hamid, M. Abdullah, A. Aziz, N. Al-Hardan, S. A. Rosli

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引用次数: 2

摘要

用共掺杂的方法实现了ZnO薄膜的P型导电。以纯锌片为靶材，采用直流磁控溅射法在硅(111)衬底上制备ZnO薄膜，并在300℃下热处理1小时。结果表明，共掺杂p型ZnO的电阻率最低，为3.412倍10-3 ω。载流子浓度为1.54 × 1022 Cm -3。

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Effect of N2 and O2 Anneal Gas Ratio For Low Resistance p - Type ZnO Formation

P - type conduction in ZnO thin films was realized by codoping method. ZnO thin films were prepared on silicon (111) substrates by DC magnetron sputtering using pure zinc disk as target and underwent heat treatment at 300degC for 1 hr. Results indicated that the co doped p - type ZnO had the lowest resistivity of 3.412 times 10-3 Omega.cm with a carrier concentration of 1.54 times 1022 cm-3.

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2006 IEEE International Conference on Semiconductor Electronics

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