2016 17th Latin-American Test Symposium (LATS)最新文献

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Attacking the smart grid using public information 利用公共信息攻击智能电网
2016 17th Latin-American Test Symposium (LATS) Pub Date : 2016-04-06 DOI: 10.1109/LATW.2016.7483348
Charalambos Konstantinou, Marios Sazos, M. Maniatakos
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引用次数: 21
Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect 块体、FDSOI和FinFET技术在电阻性短缺陷下的比较研究
2016 17th Latin-American Test Symposium (LATS) Pub Date : 2016-03-06 DOI: 10.1109/LATW.2016.7483352
Amit Karel, M. Comte, J. Gallière, F. Azaïs, M. Renovell
{"title":"Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect","authors":"Amit Karel, M. Comte, J. Gallière, F. Azaïs, M. Renovell","doi":"10.1109/LATW.2016.7483352","DOIUrl":"https://doi.org/10.1109/LATW.2016.7483352","url":null,"abstract":"In this paper, we analyze the electrical behavior of logic gates in presence of defect for different technologies. The final objective is to compare the defect detectability in a traditional planar Bulk technology, the emerging FDSOI and FinFET technologies. We implemented similar design in each technology and compared the electrical behavior with the same resistive short defect.","PeriodicalId":135851,"journal":{"name":"2016 17th Latin-American Test Symposium (LATS)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124697603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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