IEEE\/ASME Journal of Microelectromechanical Systems最新文献_第4页

Energy dissipation in submicrometer thick single-crystal silicon cantilevers 亚微米厚单晶硅悬臂梁的能量耗散

IEEE\/ASME Journal of Microelectromechanical Systems Pub Date : 2002-12-16 DOI: 10.1109/JMEMS.2002.805208

Jinling Yang, T. Ono, M. Esashi

引用次数: 316

Integrated measurement-modeling approaches for evaluating residual stress using micromachined fixed-fixed beams 利用微机械固定-固定梁评估残余应力的综合测量-建模方法

IEEE\/ASME Journal of Microelectromechanical Systems Pub Date : 2002-12-16 DOI: 10.1109/JMEMS.2002.805210

M. Baker, M. P. Boer, N. F. Smith, L. Warne, M. Sinclair

{"title":"Integrated measurement-modeling approaches for evaluating residual stress using micromachined fixed-fixed beams","authors":"M. Baker, M. P. Boer, N. F. Smith, L. Warne, M. Sinclair","doi":"10.1109/JMEMS.2002.805210","DOIUrl":"https://doi.org/10.1109/JMEMS.2002.805210","url":null,"abstract":"Two methodologies have been developed to determine the biaxial residual stress value in thin films using electrostatically actuated fixed-fixed beam test structures. In the first, we determine the compliance matrix of the support posts using 3-D finite-element analysis. The residual stress value is then found from the best fit between the measured and modeled deflection curves, with the residual stress as the only free parameter in the model. An accuracy of /spl plusmn/0.5 MPa for the average biaxial residual stress level is evaluated from the reproducibility of independent measurements over a wide range of loadings. The key to the second methodology lies in the recognition that for a given value of residual stress, there exists a unique family of deflection curves associated with two adjacent beams of different lengths. Therefore, compliance information can be extracted directly from the deflection curves. We proceed to show that essentially the same values of residual stress are found by the two methodologies, while the latter allows much more rapid extraction of the residual stress. With the second methodology established, we find that residual stress values vary across a quarter of a six-inch diameter wafer by 2.5 MPa for three structural levels of polycrystalline silicon in our five-level surface micromachining technology.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":"5 1","pages":"743-753"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73632512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 38

Fabrication of wafer-level thermocompression bonds 晶圆级热压键的制造

IEEE\/ASME Journal of Microelectromechanical Systems Pub Date : 2002-12-16 DOI: 10.1109/JMEMS.2002.805214

C. Tsau, S. Spearing, M. Schmidt

引用次数: 93

Process compatible polysilicon-based electrical through-wafer interconnects in silicon substrates 在硅衬底中处理兼容多晶硅基电通晶片互连

IEEE\/ASME Journal of Microelectromechanical Systems Pub Date : 2002-12-16 DOI: 10.1109/JMEMS.2002.805206

E. Chow, V. Chandrasekaran, A. Partridge, T. Nishida, M. Sheplak, C. Quate, T. Kenny

{"title":"Process compatible polysilicon-based electrical through-wafer interconnects in silicon substrates","authors":"E. Chow, V. Chandrasekaran, A. Partridge, T. Nishida, M. Sheplak, C. Quate, T. Kenny","doi":"10.1109/JMEMS.2002.805206","DOIUrl":"https://doi.org/10.1109/JMEMS.2002.805206","url":null,"abstract":"Electrical through-wafer interconnects (ETWI) which connect devices between both sides of a substrate are critical components for microelectromechanical systems (MEMS) and integrated circuits (IC), as they enable three-dimensional (3-D) structures and permit new packaging and integration geometries. Previously demonstrated ETWI are very difficult to integrate with standard semiconductor fabrication processes, not compatible with released sensors, do not permit extensive processing on both sides of the wafer, and are in general very application specific. This work describes the design, fabrication, and characterization of an ETWI technology for silicon substrates that can be broadly integrated with MEMS and IC processes. This interconnect is a passively isolated electrical through-wafer polysilicon plug, with a 20 /spl mu/m diameter, 10-14 /spl Omega/ resistance, and less than 1 pF capacitance. Plasma etching from both sides of the wafer is used to achieve a high-aspect ratio via (20:1 through 400 /spl mu/m). The process is compatible with standard lithography, standard wafer handling, subsequent high-temperature processing, and released sensors integration. N-type and p-type versions are demonstrated, and isolated ground planes are added to provide shielding against substrate noise. Electrical properties of these ETWI are measured and analytically modeled. These ETWI are appropriate for integration with devices with impedances much greater than the ETWI, such as piezoresistive and capacitive sensor arrays.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":"32 1","pages":"631-640"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77920547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 97

A vacuum packaged surface micromachined resonant accelerometer 一种真空封装表面微机械谐振加速度计

IEEE\/ASME Journal of Microelectromechanical Systems Pub Date : 2002-12-16 DOI: 10.1109/JMEMS.2002.805207

A. Seshia, Moorthi Palaniapan, T. Roessig, R. Howe, R. Gooch, T. Schimert, Stephen Montague

引用次数: 320

A thermal-bubble-actuated micronozzle-diffuser pump 热气泡驱动的微喷嘴扩散泵

IEEE\/ASME Journal of Microelectromechanical Systems Pub Date : 2002-12-16 DOI: 10.1109/JMEMS.2002.802909

Jr-Hung Tsai, Liwei Lin

{"title":"A thermal-bubble-actuated micronozzle-diffuser pump","authors":"Jr-Hung Tsai, Liwei Lin","doi":"10.1109/JMEMS.2002.802909","DOIUrl":"https://doi.org/10.1109/JMEMS.2002.802909","url":null,"abstract":"A thermal-bubble-actuated micropump by the principles of liquid/vapor phase transition and nozzle-diffuser flow regulation is successfully demonstrated. The micropump consists of a resistive heater, a pair of nozzle-diffuser flow controller and a 1 mm in diameter, 50 /spl mu/m in depth pumping chamber. The actuation mechanism comes from periodically nucleating and collapsing thermal bubbles. A net flow is generated from the nozzle to the diffuser by the nozzle-diffuser flow controller. Two heater designs, single-bubble and dual-bubble actuation mode, have been investigated. In the single-bubble pumping mode, a maximum flow rate of 5 /spl mu/l/min is measured when the driving pulse is 250 Hz at 10% duty cycle under an average power consumption of 1 W. A similar flow rate of 4.5 /spl mu/l/min is achieved in the dual-bubble pumping mode, at the driving pulse of 5% duty cycle at 400 Hz with lower average power consumption, 0.5 W. The static pumping pressure is measured at a maximum value of 377 Pascal when the net volume flow rate is zero. As an application example in a microfluidic device, this valve-less micropump is used in a microfluidic system to enhance the fluid mixing by agitating the flows.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":"44 1","pages":"665-671"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74343948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 189

V-band reflection-type phase shifters using micromachined CPW coupler and RF switches v波段反射型移相器，采用微加工CPW耦合器和射频开关

IEEE\/ASME Journal of Microelectromechanical Systems Pub Date : 2002-12-16 DOI: 10.1109/JMEMS.2002.805042

Jaehyoung Park, H. Kim, W. Choi, Y. Kwon, Yong-Kweon Kim

{"title":"V-band reflection-type phase shifters using micromachined CPW coupler and RF switches","authors":"Jaehyoung Park, H. Kim, W. Choi, Y. Kwon, Yong-Kweon Kim","doi":"10.1109/JMEMS.2002.805042","DOIUrl":"https://doi.org/10.1109/JMEMS.2002.805042","url":null,"abstract":"Micromachined reflection-type phase shifters with small size and low loss for V-band communication systems are described. Two- and three-bit reflection type phase shifters were designed, fabricated, and measured. The micromachined air-gap overlay coupler and the direct contact type series switches were employed to implement the phase shift and reduce an insertion loss. The phase shift can be obtained by changing the length of the open-ended stubs using the cascaded MEMS switches. The fabricated two-bit phase shifter has a measured phase shift of 0/spl deg/, 41.5/spl deg/, 84.3/spl deg/, and 128.7/spl deg/ with the consecutive actuation of the series MEMS switches. The actuation voltage of the switches is 35 V and the measured switching ON time is 5.1 /spl mu/s. The average insertion loss of the two-bit phase shifter measured 4.1 dB at 60 GHz and the return losses for all phase shift states are better than 11.7 dB from 50 to 70 GHz. The two-bit phase shifter is small, 1.5 mm /spl times/ 2.1 mm. By cascading the two-bit phase shifter and a 180/spl deg/ phase shifter (one-bit), a three-bit phase shifter is realized, which has a phase shift of 265.5/spl deg/ and an average insertion loss of 4.85 dB at 60 GHz. The size of the three-bit phase shifter is 3.2 mm /spl times/ 2.1 mm.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":"27 1","pages":"808-814"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80787079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 33

Design of atomic force microscope cantilevers for combined thermomechanical writing and thermal reading in array operation 阵列操作中热写热读组合式原子力显微镜悬臂的设计

IEEE\/ASME Journal of Microelectromechanical Systems Pub Date : 2002-12-16 DOI: 10.1109/JMEMS.2002.803283

W. King, T. Kenny, K. Goodson, G. Cross, M. Despont, U. Dürig, H. Rothuizen, G. Binnig, P. Vettiger

{"title":"Design of atomic force microscope cantilevers for combined thermomechanical writing and thermal reading in array operation","authors":"W. King, T. Kenny, K. Goodson, G. Cross, M. Despont, U. Dürig, H. Rothuizen, G. Binnig, P. Vettiger","doi":"10.1109/JMEMS.2002.803283","DOIUrl":"https://doi.org/10.1109/JMEMS.2002.803283","url":null,"abstract":"In thermomechanical data writing, a resistively-heated atomic force microscope (AFM) cantilever tip forms indentations in a thin polymer film. The same cantilever operates as a thermal proximity sensor to detect the presence of previously written data bits. This paper uses recent progress in thermal analysis of the writing and reading modes to develop new cantilever designs for increased speed, sensitivity, and reduced power consumption in both writing and reading operation. Measurements of cantilever electrical resistance during heating reveals physical limits of cantilever writing and reading, and verifies a finite-difference thermal and electrical simulation of cantilever operation. This work proposes two new cantilever designs that correspond to fabrication technology benchmarks. Simulations predict that the proposed cantilevers have a higher data rate and are more sensitive than the present cantilever. The various cantilever designs offer single-bit writing times of 0.2 /spl mu/s-25 /spl mu/s for driving voltages of 2-25 V. The thermal reading /spl Delta/R/R sensitivity is as high as 4/spl times/10/sup -4/ per vertical nm in near steady-state operation.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":"14 1","pages":"765-774"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81872566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 130

A planar electroosmotic micropump 一种平面电渗透微泵

IEEE\/ASME Journal of Microelectromechanical Systems Pub Date : 2002-12-16 DOI: 10.1109/JMEMS.2002.805055

Chuan-Hua Chen, J. Santiago

引用次数: 282

Design and fabrication of microfluidic devices for multiphase mixing and reaction 多相混合反应微流控装置的设计与制造

IEEE\/ASME Journal of Microelectromechanical Systems Pub Date : 2002-12-16 DOI: 10.1109/JMEMS.2002.803416

M. W. Losey, R. J. Jackman, S. Firebaugh, M. Schmidt, K. Jensen

{"title":"Design and fabrication of microfluidic devices for multiphase mixing and reaction","authors":"M. W. Losey, R. J. Jackman, S. Firebaugh, M. Schmidt, K. Jensen","doi":"10.1109/JMEMS.2002.803416","DOIUrl":"https://doi.org/10.1109/JMEMS.2002.803416","url":null,"abstract":"Using silicon microfabrication technology, microchemical devices have been constructed for the purpose of conducting heterogeneously catalyzed multiphase reactions. The motivation behind the design, the fabrication approach, and the experimental characterization are presented for two classes of devices. The first design involves multiple parallel channels with integrated filter structures to incorporate standard catalytic materials. These catalysts are in the form of finely divided porous particles in a packed-bed arrangement. The second device involves the incorporation of porous silicon as a catalyst support, in the form of a thin layer covering microstructured channels. These microstructured channels simulate the structure of a packed bed and enhance mass transfer relative to an open channel. The ability to incorporate features at the tens-of-microns scale can reduce the mass-transfer limitations by promoting mixing and dispersion for the multiple phases. Directly integrating the catalyst support structures into the channels of the microreactor allows the precise definition of the bed properties, including the support's size, shape and arrangement, and the void fraction. Such a design would find broad applicability in enhancing the transport and active surface area for sensing, chemical, and biochemical conversion devices. Reaction rates for the gas-liquid-solid hydrogenation of cyclohexene using the integrated catalyst with porous silicon as a support compare favorably to those rates obtained with the packed-bed approach. In both cases, the mass transfer coefficient is at least 100 times better than conventional laboratory reactors.","PeriodicalId":13438,"journal":{"name":"IEEE\\/ASME Journal of Microelectromechanical Systems","volume":"52 1","pages":"709-717"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84975618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 216