{"title":"Progress in Preparation and Applications of SnSe Thin Films","authors":"钧策 施","doi":"10.12677/oe.2023.132007","DOIUrl":"https://doi.org/10.12677/oe.2023.132007","url":null,"abstract":"Tin selenide (SnSe) is a typical layered two-dimensional P-type semiconductor material. Because","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"67 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74913853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Reconstruction Centering Method to Improve the Signal-to-Noise Ratio of the Axial Displacement Measurement of Microspheres","authors":"熙英 原","doi":"10.12677/oe.2023.132006","DOIUrl":"https://doi.org/10.12677/oe.2023.132006","url":null,"abstract":"The measurement of the axial displacement of microspheres is easily disturbed by environmental","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"186 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80659482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Preparation and Gas-Sensitive Properties of α-Fe2O3 Nano-Arrays Grown in Situ and Non-Situ","authors":"晓丽 贺","doi":"10.12677/oe.2023.131004","DOIUrl":"https://doi.org/10.12677/oe.2023.131004","url":null,"abstract":"","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"42 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76841954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Remote Sensing Image Fusion Based on Non-Negative Matrix Decomposition and Non-Subsampled Shear Wave Transform","authors":"继晴 曹","doi":"10.12677/oe.2023.132008","DOIUrl":"https://doi.org/10.12677/oe.2023.132008","url":null,"abstract":"This article proposes an image fusion method based on non-negative matrix factorization (NMF) and non-subsampled shearlet transform (NSST). The method combines NMF and NSST to extract the common and structural information of images, resulting in clearer, more natural, and accurate image fusion results. Specifically, we use NMF to decompose multiple input images and obtain their common and individual parts. Through the decomposition of NMF, the original image can be represented as a product of a non-negative matrix V , which contains the pixel values of the original image and several columns representing the basis matrix of the image. In our method, the common part corresponds to the information shared by the images, while the individual part corresponds to the individual features of the images. Then, we use NSST to decompose the common and individual parts to obtain image information at different scales and orientations. NSST is a multiscale analysis method based on shearlet transform, which can preserve the structural information of the image and suppress the pseudo-Gibbs phenomenon. Finally, we fuse the common and individual parts processed by NSST separately to obtain an output image that integrates the details and features of the image. This fusion method can handle images of different types, sizes, and resolutions well and performs well in processing complex situations. To verify the performance of the proposed method, we conducted experiments on different datasets and compared them with other commonly used image fusion methods. The experimental results show that the proposed method achieves good fusion effects. Therefore, the method proposed in this article has a wide range of application prospects in the field of image fusion.","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"28 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87092243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Study on All Solid State Narrow Pulse 523.5 nm Micro Green Laser","authors":"权 李","doi":"10.12677/oe.2023.131005","DOIUrl":"https://doi.org/10.12677/oe.2023.131005","url":null,"abstract":"In this paper, a micro LD end pumped Nd:YLF laser with narrow pulse is described. Using Cr:YAG crystal with transmit ability of 70% as passive Q-switched crystal, the pulsed optical output power of the 1047 nm fundamental is 150 μJ with a pump power of 5 W and a repetition frequency of","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"8 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75223825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yanan Du, Kang Su, Xinxin Yuan, Tuo Li, Kai Liu, Hongtao Man, Xiaofeng Zou
{"title":"Implementation of optical neural network based on Mach–Zehnder interferometer array","authors":"Yanan Du, Kang Su, Xinxin Yuan, Tuo Li, Kai Liu, Hongtao Man, Xiaofeng Zou","doi":"10.1049/ote2.12086","DOIUrl":"10.1049/ote2.12086","url":null,"abstract":"<p>Compared with electrons, photons have the potential to realise ultra-high speed operations because of its unique high speed and high parallelism. In recent years, there have been many researches on neural networks using optical hardware. The Mach–Zehnder interferometer (MZI) and micro-ring resonator (MRR) are commonly used as optical devices to realise linear operation units in optical neural networks (ONN). MZI has the advantages of simple fabrication, high sensitivity, and easy integration, which has attracted the attention of researchers. We summarise the implementation methods of ONN matrix multiplication based on MZI, the implementation methods of non-linear activation, and the on-chip training methods. We first summarise the researches on matrix multiplication of ONN based on MZI. Three kinds of MZI grid decomposition methods, Fast Fourier Transform (FFT) grid structures, and the corresponding derivation processes are introduced, respectively. Then, several experimental implementations of ONN based on MZI are summarised, and the characteristics of optical processors fabricated in these references are analysed. Finally, the realisation methods of non-linear activation and on-chip training of silicon ONN are introduced, respectively.</p>","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"17 1","pages":"1-11"},"PeriodicalIF":1.6,"publicationDate":"2022-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ote2.12086","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43985237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrophoretic deposited gold nanoparticle thin film on silver substrate","authors":"Samira Hosseingholilou, Davoud Dorranian","doi":"10.1049/ote2.12085","DOIUrl":"10.1049/ote2.12085","url":null,"abstract":"<p>Effects of the deposition time and voltage on the characteristics of gold nanoparticles (NPs) thin films, prepared by the electrophoretic deposition (EPD) method on the silver substrate, were investigated experimentally. Au NPs were synthesised using the pulsed laser ablation method in distilled water. The suspended solution of the gold NPs was used as the electrolyte of EPD. An irradiation was carried out by the fundamental wavelength of a Q-switched NdYAG laser at 1064 nm and 7 ns pulse width. The electrophoretic deposition apparatus consisted of two 2 × 2 cm pieces of silver plates as the electrodes. They were immersed in parallel with a 7 mm gap in the gold NP suspension. Five samples of gold NP thin films were prepared at different deposition times and applied voltages. Results show that the roughness, thickness and surface quality of EPD prepared thin films can be strongly controlled by the deposition time and applied voltage. The thickness of deposited films was dependent on the voltage of deposition in which their roughness was increased with increasing the deposition time. Furthermore, the reflection of deposited films was affected by the surface roughness.</p>","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"17 2-3","pages":"51-60"},"PeriodicalIF":1.6,"publicationDate":"2022-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ote2.12085","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49264586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mohammad Rakibul Islam, Md Moinul Islam Khan, Fariha Mehjabin, Jubair Alam Chowdhury, Mohibul Islam, Ahmad Jarif Yeasir, Jannat Ara Mim, Tajuddin Ahmed Nahid
{"title":"Design of a dual spider-shaped surface plasmon resonance-based refractometric sensor with high amplitude sensitivity","authors":"Mohammad Rakibul Islam, Md Moinul Islam Khan, Fariha Mehjabin, Jubair Alam Chowdhury, Mohibul Islam, Ahmad Jarif Yeasir, Jannat Ara Mim, Tajuddin Ahmed Nahid","doi":"10.1049/ote2.12084","DOIUrl":"10.1049/ote2.12084","url":null,"abstract":"<p>This study presents an investigation on the performance of the sensitivity of a dual spider-shaped surface plasmon resonance (SPR)-based photonic crystal fibre (PCF) refractive index sensor having unique design specifications. To evaluate the fibre guiding properties, Finite Element Method is used for utilising the monetarily accessible COMSOL Multiphysics version 5.3a. A gold layer has been used as the plasmonic material surrounding the fibre to ensure chemical stability, and a single fine coating of TiO<sub>2</sub> supported the improvement of gold attachment with the fibre. The structural air holes' design arrangement inside the PCF gives an enhanced sensitivity performance. The proposed PCF-SPR gives extremely reduced confinement losses. Numerous precise investigations on the fibre parameters show the highest amplitude sensitivity of 4233 RIU<sup>−1</sup> in detecting the scope of the refractive index (RI) 1.32–1.41. 2.36 × 10<sup>−6</sup> and 1.18 × 10<sup>−5</sup> and are achieved as amplitude resolution and wavelength resolution, respectively. The highest confinement loss found for this sensor is recorded to be 6.22 dB/cm. The RI sensor can lead to the exact identification of organic chemicals and biological analytes for the proposed design specifications, providing good sensitivity with significantly reduced confinement loss.</p>","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"17 1","pages":"38-49"},"PeriodicalIF":1.6,"publicationDate":"2022-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ote2.12084","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49343319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Silicon integrated frequency-tunable microwave photonic bandpass filter","authors":"Yuhan Yao, Yuhe Zhao, Jianji Dong, Xinliang Zhang","doi":"10.1049/ote2.12087","DOIUrl":"10.1049/ote2.12087","url":null,"abstract":"<p>Microwave photonic filters have been regarded as an alternative to traditional radio-frequency filters because of their wide bandwidth and large tunability. Integrated microwave photonic filters can integrate all necessary components into a single chip and are highly demanded for future radio-frequency applications. Here, a highly integrated frequency-tunable microwave photonic bandpass filter based on a silicon platform is proposed and demonstrated. The integrated filter consists of a phase modulator, four cascaded microring resonators and a photodetector. The frequency-tunable range of the integrated filter is from 6.1 to 35.9 GHz, and the reconfigurable bandwidth is from 0.22 to 0.54 GHz. A large spurious free dynamic range of 102.1 dB Hz<sup>2/3</sup> is obtained. This highly integrated approach holds great promise for miniaturised, flexible, and high-performance microwave signal processing in modern radar and communication systems.</p>","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"17 2-3","pages":"70-76"},"PeriodicalIF":1.6,"publicationDate":"2022-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ote2.12087","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49030188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}