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2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献

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A Ka-band GaAs MMIC quadrupler with high conversion gain and efficient rejection of undesired harmonics 一种具有高转换增益和有效抑制非期望谐波的ka波段GaAs MMIC四倍器
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588413
Yuehong Dong, Yuehang Xu, R. Xu, B. Yan
{"title":"A Ka-band GaAs MMIC quadrupler with high conversion gain and efficient rejection of undesired harmonics","authors":"Yuehong Dong, Yuehang Xu, R. Xu, B. Yan","doi":"10.1109/IMWS-AMP.2016.7588413","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588413","url":null,"abstract":"A Ka-band monolithic frequency quadrupler with high conversion gain and efficient rejection of undesired harmonics based on 0.15um GaAs PHEMT process is presented in this paper. The quadrupler is constructed cascading an input power amplifier, a one-stage active quadrupling part and an amplifier of the fourth harmonic. Input power amplifier with one stage is designed for guarantee of proper input power of the quadrupler, so that the quadrupling part takes in its least conversion loss. Coupled with amplifying of the fourth harmonic by the amplifier behind the quadrupling part, the whole circuit realizes a high conversion gain. Efficient rejection of undesired harmonics can be reached by harmonic restrain structure inside the quadrupling part and a open stub between the quadrupling part and the amplifier behind it. According to the simulation results, when power of input signal at 8.5 GHz is -2 dBm, the conversion gain of the MMIC quadrupler is 18.23 dB. The rejection of fundamental is 61 dBc and rejection of unwanted harmonic is 45 dBc for second harmonic, 33 dBc for the third and 40 dBc for the fifth. The overall chip size is 2.88×2.06 mm2.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127184986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of low-profiled broadband multi-frequency double-layer patch antenna 低规格宽带多频双层贴片天线的设计
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588403
F. Tang, Meng Zhang, Heng Du, Peng Chen, Yu Xutao
{"title":"Design of low-profiled broadband multi-frequency double-layer patch antenna","authors":"F. Tang, Meng Zhang, Heng Du, Peng Chen, Yu Xutao","doi":"10.1109/IMWS-AMP.2016.7588403","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588403","url":null,"abstract":"A novel low-profiled broadband multi-frequency double-layer patch antenna is proposed in this paper, which operates in GSM900, DCS1800 and Wifi. Considering the broadband, directivity, and low-profile of the antenna, seven patches with different resonant frequencies are placed together on one plane. These patches are arranged to have line polarization and are perpendicular to each other. By forming two patch antennas which have different resonant frequencies to the array, miniaturization and broadband can be realized. This structure not only avoids coupling but also takes full advantage of space. Simulation results show that good radiation performances and high gain are obtained owing to this novel design.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130088866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
60-GHz broadband CMOS on-chip antenna with an artificial magnetic conductor 带有人工磁性导体的60 ghz宽带CMOS片上天线
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588396
H. Chu, Lu Qingyuan, Yong-xin Guo
{"title":"60-GHz broadband CMOS on-chip antenna with an artificial magnetic conductor","authors":"H. Chu, Lu Qingyuan, Yong-xin Guo","doi":"10.1109/IMWS-AMP.2016.7588396","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588396","url":null,"abstract":"An on-chip antenna operating at 60 GHz with improved gain performance is proposed. The proposed antenna is fabricated using a 0.18um CMOS process. An artificial magnetic conductor (AMC) plane is located between the on-chip antenna and the grounded lossy CMOS substrate, in order to enable the reflected wave from the ground to be in-phase with the incident wave. As a result, the loss brought by the lossy substrate can be reduced. A patch antenna, together with two parasitic elements, is implemented in our design and a broad bandwidth from 50 GHz - 70 GHz is achieved. The proposed antenna can also achieve a gain performance better than -2.2 dBi within its bandwidth, which is higher than conventional on-chip antennas with gain of -10 dBi to -8 dBi. Good agreement is also achieved between simulation and measurement.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127893878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
High performance transmission lines using the Spoof Surface Plasmon Polaritons 利用欺骗表面等离子体激元的高性能传输线
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588454
Jun Feng Liu, Hao Chi Zhang, W. Tang, T. Cui
{"title":"High performance transmission lines using the Spoof Surface Plasmon Polaritons","authors":"Jun Feng Liu, Hao Chi Zhang, W. Tang, T. Cui","doi":"10.1109/IMWS-AMP.2016.7588454","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588454","url":null,"abstract":"Low-loss and high interference-suppression transmission lines (TLs) are presented in this paper by introducing field confinement in the Spoof Surface Plasmon Polartions (SPPs). By changing the dispersion behavior of SPP mode, the field confinement can be controlled. And the loose confinement of field leads to a lower-loss TL, while the tight confinement leads to a higher interference-suppression one. To verify the design methodology, different types of TLs are simulated, and the results show that SPP TLs have better propagation performance than traditional microstrip TLs.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128863003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A miniaturized wideband dual-polarized linear array with balanced antipodal Vivaldi antenna 带有平衡对映维瓦尔第天线的小型化宽带双极化线性阵列
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588343
Zhiwei Guo, Shiwen Yang, Zhipeng Shi, Yikai Chen
{"title":"A miniaturized wideband dual-polarized linear array with balanced antipodal Vivaldi antenna","authors":"Zhiwei Guo, Shiwen Yang, Zhipeng Shi, Yikai Chen","doi":"10.1109/IMWS-AMP.2016.7588343","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588343","url":null,"abstract":"Previous studies on Vivaldi wideband phased arrays are mainly focused on Two-dimensional scanning phased arrays. A miniaturized balanced antipodal Vivaldi antenna (BAVA) is presented in this paper. A novel vertical parasitic metal strip loading is employed in the dual-polarized linear phased arrays, it to make a compact structure. With the arc-shaped slots and metal strip loads, the radiation performance in lower operating band can be greatly enhanced. The proposed antenna is simulated in the infinite condition through periodic boundary with the size of 100mm (length) *100mm (width) *125mm (depth). The antenna achieves an impedance bandwidth when scanning to ±50° for VSWR≤3 achieves 4:1 (0.5GHz-2GHz) bandwidth and 5:1 (0.4GHz-2GHz) bandwidth in the vertical polarization and horizontal polarization, respectively, and the isolation is less than -18dB over the operating frequency range.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"145 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132193230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Process development of through-glass-via (TGV) interposer for radio frequency (RF) applications 用于射频(RF)应用的玻璃通孔(TGV)中介器的工艺开发
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588315
Jun Yan, Shengli Ma, Feilong Ma, Yanming Xia, Rongfeng Luo, Yufeng Jin, J. Chen
{"title":"Process development of through-glass-via (TGV) interposer for radio frequency (RF) applications","authors":"Jun Yan, Shengli Ma, Feilong Ma, Yanming Xia, Rongfeng Luo, Yufeng Jin, J. Chen","doi":"10.1109/IMWS-AMP.2016.7588315","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588315","url":null,"abstract":"In this paper, a simplified process for TGV interposer is presented for RF applications. Sand blasting method and thinning/polishing process is utilized to form TGVs on Glass wafer. TGV interposer metallization of is realized with Al sputtering followed by wet chemical etching. Based on the process, TGV interposer is fabricated and the TGV sample measures about 361μm in the diameter at the front side, 85μm in the diameter on the back side, and 338μm in the thickness. Effects of manufacture error due to sand blasting drilling on the electrical property of TGV at high frequency (1-40GHz) is investigated with simulation results.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132220593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Compact tri-band bandpass filter using asymmetric square ring loaded resonator 紧凑的三带带通滤波器，采用非对称方形环负载谐振器
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588429
Jianwei Liu, Fan Liu, Baoping Ren, Pin Wen, Yang Peng, Feng Qin, Haiwen Liu
{"title":"Compact tri-band bandpass filter using asymmetric square ring loaded resonator","authors":"Jianwei Liu, Fan Liu, Baoping Ren, Pin Wen, Yang Peng, Feng Qin, Haiwen Liu","doi":"10.1109/IMWS-AMP.2016.7588429","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588429","url":null,"abstract":"A triple-band bandpass filter with good selectivity based on asymmetric square ring loaded resonator (ASRLR) is proposed in this paper. The even- and odd-mode method is applied to investigate the resonant characteristic of the proposed triple-mode ASRLR. The 50-Ω tapped line is applied to design the I/O ports. The operating bands of the designed tri-band BPF are located at 1.57 GHz (GPS application), 3.5 GHz (WiMAX application) and 5.2 GHz (WLAN application), respectively. To verify the proposed approach, the filter is designed and analyzed by using EM simulator, the obtained results are agree well with the theory analysis?","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134252193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Tunable terahertz resonator based on intercalation doped-multilayer graphene ribbon (ID-MGR) 基于嵌入掺杂多层石墨烯带(ID-MGR)的可调谐太赫兹谐振器
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588325
Xiang Li, Linsheng Wu, Yao-ping Zhang, J. Mao, Xiaojie Li
{"title":"Tunable terahertz resonator based on intercalation doped-multilayer graphene ribbon (ID-MGR)","authors":"Xiang Li, Linsheng Wu, Yao-ping Zhang, J. Mao, Xiaojie Li","doi":"10.1109/IMWS-AMP.2016.7588325","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588325","url":null,"abstract":"Graphene has been proved to be a promising candidate nanomaterial for tunable electronics. In this paper, a novel tunable terahertz resonator is proposed based on an electrically biased intercalation doped-multilayer graphene ribbon (ID-MGR). The induced self-heating effect is taken into account. Then, the equivalent circuit parameters are predicted. The resonant frequencies and Q-factors of the resonator are calculated with the equivalent single conductor (ESC) model. By properly selecting the geometry of the ID-MGR resonator and applying a biasing voltage of 1.0 V, a tuning ratio up to 21.2% can be achieved with the unloaded Q-factor around 25 for the resonant frequency around 1 THz.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133787752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A controllable and low loss dual-band bandpass filter by using a simple ring resonator 一种利用环形谐振器的可控低损耗双带通滤波器
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588428
Chengying Du, Kaixue Ma, Shouxian Mou
{"title":"A controllable and low loss dual-band bandpass filter by using a simple ring resonator","authors":"Chengying Du, Kaixue Ma, Shouxian Mou","doi":"10.1109/IMWS-AMP.2016.7588428","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588428","url":null,"abstract":"A novel structure, which is built by using a simple ring resonator loading open stubs, is adopted to design a dual-band bandpass filter with low loss and controllable characteristics. The fractional bandwidths of two passbands and transmission zeros are controlled by adjusting the length of the loaded open stub and the distance of two feeders. Based on Substrate Integrated Suspended Line (SISL) platform, the filter is designed and implemented with self-packaging and low losses, which are only 0.45/0.83dB of two passbands. The measured results are well agreed with the simulated results.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134067122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effect of contact resistance of passive intermodulation distortion in microstrip lines 微带线无源互调失真接触电阻的影响
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588457
Yong Gao, E. Li, Hu Zheng, Gaofeng Guo, Yunpeng Zhang
{"title":"Effect of contact resistance of passive intermodulation distortion in microstrip lines","authors":"Yong Gao, E. Li, Hu Zheng, Gaofeng Guo, Yunpeng Zhang","doi":"10.1109/IMWS-AMP.2016.7588457","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588457","url":null,"abstract":"An experimental investigation on the effect of the contact resistance of passive intermodulation distortion (PIM) is presented. The effect happens when the value of contact resistance changes, which leading to a variation of PIM in micostrip lines. In the measurement of the effect, the testing segment of the microstrip lines is working at the power of about 40dBm. While changing the contact resistance of the microstrip lines, there are unreasonable amplitude altered of IMD3, which draw my attention. The way of changing the contact resistance of the testing microstrip lines is presented in this paper. The result of this study demonstrates that the contact resistance is one of the aspects, which should be considered when measuring the PIM. And it provides an important new consideration for improving the precision of measuring the PIM.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117059927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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