用于射频(RF)应用的玻璃通孔(TGV)中介器的工艺开发

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI:10.1109/IMWS-AMP.2016.7588315

Jun Yan, Shengli Ma, Feilong Ma, Yanming Xia, Rongfeng Luo, Yufeng Jin, J. Chen

{"title":"用于射频(RF)应用的玻璃通孔(TGV)中介器的工艺开发","authors":"Jun Yan, Shengli Ma, Feilong Ma, Yanming Xia, Rongfeng Luo, Yufeng Jin, J. Chen","doi":"10.1109/IMWS-AMP.2016.7588315","DOIUrl":null,"url":null,"abstract":"In this paper, a simplified process for TGV interposer is presented for RF applications. Sand blasting method and thinning/polishing process is utilized to form TGVs on Glass wafer. TGV interposer metallization of is realized with Al sputtering followed by wet chemical etching. Based on the process, TGV interposer is fabricated and the TGV sample measures about 361μm in the diameter at the front side, 85μm in the diameter on the back side, and 338μm in the thickness. Effects of manufacture error due to sand blasting drilling on the electrical property of TGV at high frequency (1-40GHz) is investigated with simulation results.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Process development of through-glass-via (TGV) interposer for radio frequency (RF) applications\",\"authors\":\"Jun Yan, Shengli Ma, Feilong Ma, Yanming Xia, Rongfeng Luo, Yufeng Jin, J. Chen\",\"doi\":\"10.1109/IMWS-AMP.2016.7588315\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a simplified process for TGV interposer is presented for RF applications. Sand blasting method and thinning/polishing process is utilized to form TGVs on Glass wafer. TGV interposer metallization of is realized with Al sputtering followed by wet chemical etching. Based on the process, TGV interposer is fabricated and the TGV sample measures about 361μm in the diameter at the front side, 85μm in the diameter on the back side, and 338μm in the thickness. Effects of manufacture error due to sand blasting drilling on the electrical property of TGV at high frequency (1-40GHz) is investigated with simulation results.\",\"PeriodicalId\":132755,\"journal\":{\"name\":\"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMWS-AMP.2016.7588315\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP.2016.7588315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

本文提出了一种用于射频应用的TGV介面器的简化工艺。采用喷砂法和减薄/抛光工艺在玻璃薄片上形成tgv。采用铝溅射后湿法化学蚀刻的方法实现了TGV中间金属化。在此基础上，制备出了TGV中间体样品，样品正面直径为361μm，背面直径为85μm，厚度为338μm。结合仿真结果，研究了喷砂钻孔制造误差对高频(1 ~ 40ghz) TGV电性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Process development of through-glass-via (TGV) interposer for radio frequency (RF) applications

In this paper, a simplified process for TGV interposer is presented for RF applications. Sand blasting method and thinning/polishing process is utilized to form TGVs on Glass wafer. TGV interposer metallization of is realized with Al sputtering followed by wet chemical etching. Based on the process, TGV interposer is fabricated and the TGV sample measures about 361μm in the diameter at the front side, 85μm in the diameter on the back side, and 338μm in the thickness. Effects of manufacture error due to sand blasting drilling on the electrical property of TGV at high frequency (1-40GHz) is investigated with simulation results.

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来源期刊

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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