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IEEE MTT-S International Microwave Symposium Digest, 2005.最新文献

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A novel multiresolution high-dynamic ultra-broadband time-domain emi measurement system 一种新型的多分辨率高动态超宽带时域电磁干扰测量系统
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516918
S. Braun, A. Alt, P. Russer
{"title":"A novel multiresolution high-dynamic ultra-broadband time-domain emi measurement system","authors":"S. Braun, A. Alt, P. Russer","doi":"10.1109/MWSYM.2005.1516918","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516918","url":null,"abstract":"A time-domain electromagnetic interference (TDEMI) measurement system allows to reduce the measurement time by several orders of magnitude in comparison with conventional systems. This will reduce the costs of compliance tests considerably. In this work, a novel multiresolution time-domain EMI (MRTDEMI) measurement system is presented. The MRTDEMI exhibits several channels with limiters, amplifiers and analog-to-digital converters (ADCs). The amplitude range of the signal is subdivided into several intervals. In each interval, the analog-to-digital conversion is performed with a discretisation proportional to the width of the interval. The signal-to-noise ratio (SNR) of the MRTDEMI measurement system compared with a conventional TDEMI measurement system for transient signals is enhanced by at least 50 dB. Measurements were performed in the frequency range from 30 MHz-1GHz.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83662610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Surface mounted millimeter waveguide devices based on metallized dielectric foam or plastic materials 基于金属化介质泡沫或塑料材料的表面安装毫米波波导器件
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516949
D. Lohinetong, P. Minard, C. Nicolas, J.L. Le Bras, A. Louzir, J. Thevenard, J. Coupez, C. Person
{"title":"Surface mounted millimeter waveguide devices based on metallized dielectric foam or plastic materials","authors":"D. Lohinetong, P. Minard, C. Nicolas, J.L. Le Bras, A. Louzir, J. Thevenard, J. Coupez, C. Person","doi":"10.1109/MWSYM.2005.1516949","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516949","url":null,"abstract":"A novel transition structure between microstrip line and surface mounted dielectric foam or plastic waveguide is presented. The waveguide flange is ended by a cavity and allows a fully automated assembly process onto an RF printed circuit board (PCB), in order to minimize mass-production cost of millimeter-wave products. The new concept has been applied for waveguide filter integration, presenting respectively a Chebyshev and a pseudo-elliptical response. Such surface mounted devices are specified for VSAT systems, operating in the 29.5-30.0GHz band.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83762364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Complex permittivity measurements of dielectrics and semiconductors at millimeter waves with high power sources 高功率源毫米波下介电体和半导体的复杂介电常数测量
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517156
M. Afsar, K. Korolev, L. Subramanian, I. Tkachov
{"title":"Complex permittivity measurements of dielectrics and semiconductors at millimeter waves with high power sources","authors":"M. Afsar, K. Korolev, L. Subramanian, I. Tkachov","doi":"10.1109/MWSYM.2005.1517156","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517156","url":null,"abstract":"We present complex dielectric permittivity measurements of various semiconductor and dielectric materials, including highly absorbing substances, in Q-, V- and W-band frequencies. The measurements have been done using broadband quasioptical millimeter wave system with a backward-wave oscillator as a high power source of radiation. Frequency dependencies of real and imaginary parts of dielectric permittivity are calculated from the transmittance spectra. Complex dielectric permittivity data, obtained using both waveguide bridge technique and free space measurements have been compared with previously published results.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83782489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Conformal 10 GHz Rectenna for Wireless Powering of Piezoelectric Sensor Electronics 用于压电传感器电子器件无线供电的共形10ghz整流天线
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516543
C. Walsh, S. Rondineau, M. Jankovic, George Zhao, Z. Popovic
{"title":"A Conformal 10 GHz Rectenna for Wireless Powering of Piezoelectric Sensor Electronics","authors":"C. Walsh, S. Rondineau, M. Jankovic, George Zhao, Z. Popovic","doi":"10.1109/MWSYM.2005.1516543","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516543","url":null,"abstract":"This paper presents the design, implementation and characterization of a rectenna array for wireless powering of sensor electronics for airframe fatigue detection. The rectenna aperture is powered 5 minutes at a time during inspection with a requirement of ±15V at 100mW. The maximum incident RF power is 10mW/cm2. A single rectenna element at this incident power density has an output power of 5 mW and an estimated efficiency of 50%. Each of the 25 antenna elements has an integrated rectifier, the outputs of which are combined in series to achieve the total required voltage and power at an estimated efficiency of 40%.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79627491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 47
Digital memory-based predistortion 基于数字记忆的预失真
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517150
S. McBeath, D. Pinckley
{"title":"Digital memory-based predistortion","authors":"S. McBeath, D. Pinckley","doi":"10.1109/MWSYM.2005.1517150","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517150","url":null,"abstract":"A predistortion algorithm based on a memory-based power amplifier model (PA) is presented. The algorithm was tested using a PA measurement system. The predistortion techniques are based on the filtered tapped delay line (TDL) model. Memoryless predistortion techniques are also presented to show the benefits of the memory-based predistortion approach. Memoryless predistortion reduces third order IM by 5-8 dB, while memory-based predistortion reduces third order IM by 18-20 dB.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79734098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Compact colinear end-launcher for rectangular waveguides 用于矩形波导的紧凑型共线末端发射器
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516891
M. Simeoni, C. Coman, I. Lager
{"title":"Compact colinear end-launcher for rectangular waveguides","authors":"M. Simeoni, C. Coman, I. Lager","doi":"10.1109/MWSYM.2005.1516891","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516891","url":null,"abstract":"A novel structure for launching the fundamental mode in rectangular waveguides is proposed. The geometry consists of a cavity-backed circular patch radiating into a rectangular waveguide. The matching properties of the proposed component are comparable with the ones of the classically used L-shaped loop end-launcher. The structure results in a very compact, colinear transition from a standard coaxial connector to a rectangular waveguide. The component has applications as general purpose coaxial-to-waveguide transition and is well suited for low-profile phased-array antennas.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81121329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 900/1500/2000-MHz triple-band reconfigurable power amplifier employing RF-MEMS switches 采用RF-MEMS开关的900/1500/2000 mhz三频带可重构功率放大器
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516691
A. Fukuda, H. Okazaki, S. Narahashi, T. Hirota, Y. Yamao
{"title":"A 900/1500/2000-MHz triple-band reconfigurable power amplifier employing RF-MEMS switches","authors":"A. Fukuda, H. Okazaki, S. Narahashi, T. Hirota, Y. Yamao","doi":"10.1109/MWSYM.2005.1516691","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516691","url":null,"abstract":"A triple-band reconfigurable power amplifier (PA), which comprises the band-switchable matching networks with RF-MEMS switches, is presented. The design method of the triple-band PA is described and switch requirements for multi-band operation are discussed. The switch satisfies the estimated requirements. The fabricated triple-band PA achieves high output power and high power added efficiency in three different frequency bands, 900 MHz, 1500 MHz, and 2000 MHz, respectively. We conclude that the proposed reconfigurable PA is easily expanded to multi-band operation and is quite promising for future mobile terminals.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88600793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 45
LTCC compatible ferroelectric phase shifters LTCC兼容铁电移相器
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516671
A. Deleniv, S. Gevorgian, H. Jantunnen, T. Hu
{"title":"LTCC compatible ferroelectric phase shifters","authors":"A. Deleniv, S. Gevorgian, H. Jantunnen, T. Hu","doi":"10.1109/MWSYM.2005.1516671","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516671","url":null,"abstract":"Two phase shifters with novel topologies are presented. The phase shifters are based on LTCC compatible ferroelectric films with /spl epsiv//sub r/=200, and tan/spl delta/=0.04 at 10 GHz. A Ku-band phase shifter is designed to provide DC bias independent matching in the wide frequency range. It has microstrip design where ferroelectric film is used as a substrate and requires relatively low DC bias voltages. The phase shifter showed -15dB matching in /spl sim/50% bandwidth and 15/spl deg//dB figure of merit. In X-band phase shifter, the ferroelectric film is deposited on the low permittivity substrate. Using such two layered substrate a loaded line phase shifter based on coplanar-plate varactors is realized. The varactors are included in the circuit ground and are connected with the microstrip using vias. This designed allows reduction of overall loss due to more efficient use of ferroelectric. The figure of merit of this phase shifter is 207dB at 10 GHz.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89393392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Analytic approximations for multilayer substrate coplanar-plate capacitors 多层衬底共面板电容器的解析近似
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516957
S. Gevorgian, S. Abadei
{"title":"Analytic approximations for multilayer substrate coplanar-plate capacitors","authors":"S. Gevorgian, S. Abadei","doi":"10.1109/MWSYM.2005.1516957","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516957","url":null,"abstract":"Closed form analytic approximations are proposed for complex impedance (capacitance and Q-factor) of capacitors formed by two coplanar rectangular conducting patches sandwiched between dielectric layers. The computations using proposed formulas are at least an order of magnitude faster in comparison with the commercially available software's, and can be used in optimisation procedures. The formulas are reversible, i.e. from measured impedance one can compute permittivity and losses of one of the dielectric layers.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87222160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Attenuation compensation techniques in distributed SiGe HBT amplifiers using highly lossy thin film microstrip lines 采用高损耗薄膜微带线的分布式SiGe HBT放大器衰减补偿技术
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516527
C. Schick, T. Feger, E. Soenmez, K. Schad, A. Trasser, H. Schumacher
{"title":"Attenuation compensation techniques in distributed SiGe HBT amplifiers using highly lossy thin film microstrip lines","authors":"C. Schick, T. Feger, E. Soenmez, K. Schad, A. Trasser, H. Schumacher","doi":"10.1109/MWSYM.2005.1516527","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516527","url":null,"abstract":"A compact 1.3mm x 0.83mm SiGe distributed wideband amplifier is presented. The design utilises highly lossy thin film microstrip transmission line elements. Attenuation compensation methods for extending the amplifier’s bandwidth are discussed. Amplifier small-signal gain is 10.5 dB, upper 3 dB cut-off frequency is 41 GHz. Low group delay variations of 21 ps within the bandwidth qualify this amplifier for operation in a 40 Gbit/s fibre-optic communication system.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80590205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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