Attenuation compensation techniques in distributed SiGe HBT amplifiers using highly lossy thin film microstrip lines

IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI:10.1109/MWSYM.2005.1516527

C. Schick, T. Feger, E. Soenmez, K. Schad, A. Trasser, H. Schumacher

引用次数: 2

Abstract

A compact 1.3mm x 0.83mm SiGe distributed wideband amplifier is presented. The design utilises highly lossy thin film microstrip transmission line elements. Attenuation compensation methods for extending the amplifier’s bandwidth are discussed. Amplifier small-signal gain is 10.5 dB, upper 3 dB cut-off frequency is 41 GHz. Low group delay variations of 21 ps within the bandwidth qualify this amplifier for operation in a 40 Gbit/s fibre-optic communication system.

查看原文本刊更多论文

采用高损耗薄膜微带线的分布式SiGe HBT放大器衰减补偿技术

提出了一种紧凑的1.3mm × 0.83mm SiGe分布式宽带放大器。该设计利用高损耗的薄膜微带传输线元件。讨论了扩展放大器带宽的衰减补偿方法。放大器小信号增益为10.5 dB，上限3db截止频率为41 GHz。在带宽范围内21 ps的低组延迟变化使该放大器能够在40 Gbit/s光纤通信系统中运行。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE MTT-S International Microwave Symposium Digest, 2005.

自引率

0.00%

发文量