高功率源毫米波下介电体和半导体的复杂介电常数测量

M. Afsar, K. Korolev, L. Subramanian, I. Tkachov
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引用次数: 3

摘要

我们提出了复杂的介电常数测量各种半导体和介电材料,包括高吸收物质,在Q, V和w波段频率。测量使用宽带准光毫米波系统,并使用后向波振荡器作为高功率辐射源。通过透射光谱计算了介电常数实部和虚部的频率依赖关系。利用波导桥技术和自由空间测量获得的复介电常数数据与先前发表的结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Complex permittivity measurements of dielectrics and semiconductors at millimeter waves with high power sources
We present complex dielectric permittivity measurements of various semiconductor and dielectric materials, including highly absorbing substances, in Q-, V- and W-band frequencies. The measurements have been done using broadband quasioptical millimeter wave system with a backward-wave oscillator as a high power source of radiation. Frequency dependencies of real and imaginary parts of dielectric permittivity are calculated from the transmittance spectra. Complex dielectric permittivity data, obtained using both waveguide bridge technique and free space measurements have been compared with previously published results.
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