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IEEE MTT-S International Microwave Symposium Digest, 2005.最新文献

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Power efficient RF pulse compression through switched resonators 功率高效射频脉冲压缩通过开关谐振器
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-17 DOI: 10.1109/MWSYM.2005.1516890
Shinho Kim, Xiaojing Xu, Y. Wang
{"title":"Power efficient RF pulse compression through switched resonators","authors":"Shinho Kim, Xiaojing Xu, Y. Wang","doi":"10.1109/MWSYM.2005.1516890","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516890","url":null,"abstract":"A simple, compact and efficient RF pulse compression technique based on a switched resonator concept has been introduced. It utilizes the charging/discharging characteristics of the circuit resonator and can be applied to any other microwave resonators. The approach compresses the duration of the pulse envelope without changing the phase characteristics of the RF carrier. The achievable power efficiency has proven to be sub-optimal which is 1dB lower than the lossless case. A test bed with a microstrip coupled line resonator and a Schottky diode has been fabricated and tested. The experiment demonstrates a 4 to 1 compression ratio. The proposed technique is promising for many RF signal processings such as RF multiplexing in a noise limited scenarios","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73662353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Plenary Session 全体会议
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-17 DOI: 10.1109/mwsym.2005.1516538
N. Joshi, Vara Prasad
{"title":"Plenary Session","authors":"N. Joshi, Vara Prasad","doi":"10.1109/mwsym.2005.1516538","DOIUrl":"https://doi.org/10.1109/mwsym.2005.1516538","url":null,"abstract":"Title: Abstract 123 Title: Effect of Supplement Type on the Nutrient Status of Lactating Kiko in Woodlands Abstract 136 Title: Cost of Feeding and Performance of Small Ruminants during the Lean Period of Forage Production Characterization of d-tritipyrum germplasm for salt stress","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81446173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of toroidal inductors using stressed metal technology 利用应力金属技术设计环形电感器
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-17 DOI: 10.1109/MWSYM.2005.1516706
Jeong-Il Kim, Dae-Hee Weon, Jong-Hyeok Jeon, S. Mohammadi, L. Katehi
{"title":"Design of toroidal inductors using stressed metal technology","authors":"Jeong-Il Kim, Dae-Hee Weon, Jong-Hyeok Jeon, S. Mohammadi, L. Katehi","doi":"10.1109/MWSYM.2005.1516706","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516706","url":null,"abstract":"This paper presents design, fabrication and characterization of three-dimensional (3-D) toroidal inductors using a stressed metal technology developed at Purdue University. The fabricated 31-turn toroidal inductor on high-resistivity silicon substrate shows inductance value of 25.4 nH and peak quality factor of 14.2. Because of the arc deployment of inductor turns, it is found that a sufficiently narrow turn-to-turn gap is essential to achieve high inductance value. In addition, it is found that, even for toroidal inductors, the substrate effects are the dominant loss mechanism at high frequencies and should be suppressed in order to obtain high values of the quality factor.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88007846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Monolithic LTCC SiP transmitter for 60GHz wireless communication terminals 用于60GHz无线通信终端的单片LTCC SiP发射机
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-17 DOI: 10.1109/MWSYM.2005.1516839
Young Chul Lee, W. Chang, C. Park
{"title":"Monolithic LTCC SiP transmitter for 60GHz wireless communication terminals","authors":"Young Chul Lee, W. Chang, C. Park","doi":"10.1109/MWSYM.2005.1516839","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516839","url":null,"abstract":"We demonstrate a 36 times 12 times 0.9mm3 sized compact monolithic LTCC SiP transmitter (Tx) for 60GHz-band wireless communication terminal applications. Five GaAs MMICs including mixer, driver amplifier, power amplifier and two of frequency doublers have been integrated onto LTCC multilayer circuit which embeds a stripline BPF and a microstrip patch antenna. A novel CPW-to-stripline transition has been devised integrating air-cavities to minimize the associated attenuation. The fabricated transmitter achieves an output of 9dBm at a RF frequency of 60.4GHz, an IF frequency of 2.4GHz, and a LO frequency of 58GHz. The up-conversion gain is 11.2dB; while the LO signal is suppressed below 33.4dBc, and the spurious signal is also suppressed below 27.4dBc. This is the first report on the LTCC SiP transmitter integrating both a BPF and an antenna. A 60 GHz communication was demonstrated","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73692033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 72
Inhomogeneous Stepped-Impedance Corrugated Waveguide Low-Pass Filters 非均匀阶跃阻抗波纹波导低通滤波器
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-17 DOI: 10.1109/MWSYM.2005.1616537
R. Levy
{"title":"Inhomogeneous Stepped-Impedance Corrugated Waveguide Low-Pass Filters","authors":"R. Levy","doi":"10.1109/MWSYM.2005.1616537","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1616537","url":null,"abstract":"Previous work on homogeneous stepped-impedance corrugated filters has been extended to the general inhomogeneous structure, where the waveguide broad dimension is varied in addition to the narrow dimension. It is then possible to design waveguide lowpass filters with specified stopbands free of spurious mode propagation to give rejection levels as high as 100 dB. Additionally, control over the lower cut-off frequency and the ability to match down almost to this frequency facilitates the design of compact waveguide bandpass filters having very broad bandwidths.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76271237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design Flow and Methodology on the Design of BAW components BAW组件设计流程与方法研究
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-17 DOI: 10.1109/MWSYM.2005.1516567
E. Schmidhammer, B. Bader, W. Sauer, M. Schmiedgen, H. Heinze, C. Eggs, T. Metzger
{"title":"Design Flow and Methodology on the Design of BAW components","authors":"E. Schmidhammer, B. Bader, W. Sauer, M. Schmiedgen, H. Heinze, C. Eggs, T. Metzger","doi":"10.1109/MWSYM.2005.1516567","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516567","url":null,"abstract":"Bulk Acoustic Wave (BAW) technology based on the sputtering of piezoelectric thin films on high resistive silicon has recently emerged as one of the preferred technologies for the realization of miniaturized high performance RF filters and duplexers for wireless CDMA-based applications like mobile phones. We present the performance improvements within the development of a duplexer for US-PCS-CDMA applications with a footprint of 3.8mm × 3.8mm and a height of 1.1mm. The duplexer consists of a transmit (TX) and a receive (RX) filter, which are flip-chipped as bare dies on a low temperature co-fired ceramic (LTCC) multilayer substrate incorporating additional matching elements. The filters are realized using solidly mounted resonator (SMR) technology, where an acoustic mirror separates the active resonator from the substrate. Duplexer packaging is based on the EPCOS’ proprietary CSSP technology, originally developed to further shrink the size of SAW devices. This technology includes a cavity between the package and the acoustically active filter areas and therefore keeps the surface of the active device protected from environmental influences. The front-end technology for realizing the RF filters uses standard 200 mm CMOS technology and the deposition of AlN piezoelectric thin films with high thickness uniformity over the wafer. The duplexer is fully matched to 50 Ohm with low insertion attenuation in the pass band, a superior stop band characteristic up to 10 GHz, and a temperature coefficient of frequency (TCF) of −20 ppm/K.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86563699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Session WE1E: High-Power GaN Devices 会议WE1E:大功率GaN器件
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-17 DOI: 10.1109/MTT67880.2005.9387798
A. Platzker, J. Heaton
{"title":"Session WE1E: High-Power GaN Devices","authors":"A. Platzker, J. Heaton","doi":"10.1109/MTT67880.2005.9387798","DOIUrl":"https://doi.org/10.1109/MTT67880.2005.9387798","url":null,"abstract":"New state of the art power and efficiency results are documented for high power GaN HFETs in this session. New passivation schemes and dynamic gate bias technique are described, together with an experimental dispersion investigation and very high temperature operation.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88487250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Session TU3E: Focussed Session: Memorial Session for Don Parker 会议TU3E:重点会议:堂·帕克纪念会议
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-17 DOI: 10.1109/MTT67880.2005.9387836
R. Eisenhart
{"title":"Session TU3E: Focussed Session: Memorial Session for Don Parker","authors":"R. Eisenhart","doi":"10.1109/MTT67880.2005.9387836","DOIUrl":"https://doi.org/10.1109/MTT67880.2005.9387836","url":null,"abstract":"This session is an opportunity to show our deep respect and admiration for Don Parker who recently passed away. Although Don is credited with innumerable contributions to the MTT-S, he is best reminded for his soft-spoken ways of accomplishing things and getting others involved. Several of Don's friends and associates will say a few words in remembrance.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82620328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Miniaturization and harmonic suppression of branch-line and rat-race hybrid coupler using compensated spiral compact microstrip resonant cell 采用补偿型螺旋紧凑型微带谐振腔的支路和大鼠混合耦合器的小型化和谐波抑制
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-17 DOI: 10.1109/MWSYM.2005.1516894
J. Gu, Xiaowei Sun
{"title":"Miniaturization and harmonic suppression of branch-line and rat-race hybrid coupler using compensated spiral compact microstrip resonant cell","authors":"J. Gu, Xiaowei Sun","doi":"10.1109/MWSYM.2005.1516894","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516894","url":null,"abstract":"In this paper, a compensated spiral compact microstrip resonant cell (SCMRC) is applied to design a miniaturized microstrip rat-race and branch-line hybrid coupler. The proposed structures can achieve both a significant reduction of size and harmonic suppression. As the SCMRC are constructed entirely from microstrip lines, the couplers are easily fabricated using conventional printed-circuit board fabrication process. The proposed rat-race coupler occupies only 30% of conventional one's area, while the area of the branch-line coupler with the compensated SCMRC is 24% of the conventional case. On the other hand, the performance of the proposed couplers is as good as that of the corresponding conventional structures and deep harmonic suppression in addition. The design and simulation have been performed using full-wave analysis based on ADS Momentum","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88828219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 55
Signal model to extract intrinsic parameters of high-Q dielectric resonators from noisy measurements 从噪声测量中提取高q介电谐振器固有参数的信号模型
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-17 DOI: 10.1109/MWSYM.2005.1516921
K. Naishadham, J. Piou
{"title":"Signal model to extract intrinsic parameters of high-Q dielectric resonators from noisy measurements","authors":"K. Naishadham, J. Piou","doi":"10.1109/MWSYM.2005.1516921","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516921","url":null,"abstract":"We report characterization of an open dielectric resonator with Q of 4000 to 7000 in the 25-40 GHz frequency range. Because of its small size, the measured parameters are very sensitive to background noise contributed by the coupling mechanism, package modes, radiation, etc. Therefore, it becomes important to properly calibrate out this parasitic influence in order to accurately measure the unloaded Q factor of the resonator. We report an accurate software calibration procedure based on a state-space spectral estimation algorithm, which effectively filters out the background noise and facilitates linear extraction of the unloaded Q","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83709753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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