{"title":"会议WE1E:大功率GaN器件","authors":"A. Platzker, J. Heaton","doi":"10.1109/MTT67880.2005.9387798","DOIUrl":null,"url":null,"abstract":"New state of the art power and efficiency results are documented for high power GaN HFETs in this session. New passivation schemes and dynamic gate bias technique are described, together with an experimental dispersion investigation and very high temperature operation.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Session WE1E: High-Power GaN Devices\",\"authors\":\"A. Platzker, J. Heaton\",\"doi\":\"10.1109/MTT67880.2005.9387798\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New state of the art power and efficiency results are documented for high power GaN HFETs in this session. New passivation schemes and dynamic gate bias technique are described, together with an experimental dispersion investigation and very high temperature operation.\",\"PeriodicalId\":13133,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTT67880.2005.9387798\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTT67880.2005.9387798","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New state of the art power and efficiency results are documented for high power GaN HFETs in this session. New passivation schemes and dynamic gate bias technique are described, together with an experimental dispersion investigation and very high temperature operation.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
